电子科学与技术专业英语.docx

精品文档，仅供学习与交流，如有侵权请联系网站删除1.1 Energy bands and carrier concentration1.1.1 semiconductor materials New words:Semiconductor n. 半导体; conductivity n. 导电性 ; Resistivity n. 电阻率 ; impurity n. 杂质; Bipolar transistor 双极型晶体管 ; rectifier n. 整流器; Photodiode 光电二极管; device n. 装置；策略；图案; leakage currents 泄漏电流 magnetic adj. 有吸引力的；有磁性的；Quartz n. 石英; aluminum n. 铝; illumination n. 照明；光照度; silicon n. 硅；硅元素; gallium n. 化学 镓 gallium nitride 氮化镓；磷化镓 germanium n.锗（32号元素，符号Ge）;gallium arsenide 砷化镓 ; arsenide n. 无化 砷化物; carbon n. 碳；复写纸adj. 碳的； boron n. 化硼; nitrogen n. 化氮; phosphorus n. 磷; sulfur vt. 用硫磺处理n. 硫磺；硫磺色; silicon dioxide 无化 二氧化硅ComprehensionThe conductivities of a semiconductor is generally sensitive to temperature, illumination, magnetic field, and minute amount of impurity atoms.半导体的导电性一般对温度敏感、照明、磁场与少量的杂质原子存在引起的。Germanium proved unsuitable in many application because germanium devices exhibited high leakage currents at only moderately elevated temperatures.锗被证明不适合许多应用,因为锗器件在只有轻度升高的温度时展出很高的泄漏电流。1.1.2 Crystal StructureNew words: Diagonal n. 对角线；斜线adj. 斜的;Lattice n.格子；格架；晶格vt. 使成格子状; unit cell 晶体 晶胞，晶体 单胞；晶体 单位晶格; reciprocal n. 数 倒数； adj.相互的；倒数的，彼此相反的cubic-crystal 立方晶体; lattice constant 晶格常数； 点阵常数;body-centered cubic 体心立方; Face-centered cubic; diamond lattice 金刚石点阵 钻石格子 金刚石晶格; tetrahedron n. 晶体 四面体;zinc blende lattice 闪锌矿晶格; tungsten n. 化学 钨;Cartesian coordinates 笛卡儿坐标 Equidistant adj. 等距的；距离相等的;Sodium n. 化学 钠（11号元素，符号 Na）; Miller indices 密勒指数;ComprehensionThis structure also belongs to the cubic-crystal family and can be seen as two interpenetrating fcc sublattices with one sublattice displaced from the other by one quarter of the distance along a diagonal of the cube.该结构也属于立方晶体家庭和可以被看作是两个面心立方晶格，其中一个子晶格沿另一个的对角线平移四分之一距离而构成的立方。All atoms are identical in a diamond lattice, and each atom in the diamond lattice is surrounded by four equidistant nearest neighbors that lie at the corners of a tetrahedron.所有的原子都是相同的金刚石晶格,每一个原子在晶格中都有四个等距的最近邻居,处在四面体的四个角上。Extracurricular ReadingA semiconductor is a material with electrical conductivity due to electron flow (as opposed to ionic conductivity) intermediate in magnitude between that of a conductor and an insulator. This means conductivity roughly in the range of 103 to 108 Siemens per centimeter. Semiconductor materials are the foundation of modern electronics, including radio, computers, telephones, and many other devices. Such devices include transistors, solar cells, many kinds of diodes including the light-emitting diode, the silicon controlled rectifier, and digital and analog integrated circuits. Similarly, semiconductor solar photovoltaic panels directly convert light energy into electrical energy.半导体是一种物质,它由于电子流动而产生的电导率(相对于离子电导率)在导体和绝缘体之间的中间级。这意味着电导率大致范围为103到 108西门子每厘米。半导体材料是现代的电子产品,其中包括收音机,计算机,电话,和许多其他的设备的基础。这样的设备包括晶体管、太阳能电池、多种二极管包括发光二极管, 硅可控整流器、数字和模拟集成电路。同样,半导体太阳能光伏板直接转换光能为电能。1.1.3 Valence BondsNew words:hole n. 洞，孔；洞穴，穴；突破口vt. 凿洞vi. 凿洞，穿孔; valence electron 价电子; covalent bonding 共价键；共价键结；共价结合; positive charge 物 正电荷; deficiency n. 缺陷，缺点；缺乏；; fictitious adj. 虚构的；假想的；编造的；假装的; analogous adj. 类似的；昆 同功的；可比拟的Comprehension Each electron spend most of their time between the two nuclei. However, both electrons spend most of their time between the two nuclei.每一个电子把大部分时间花在两个细胞核之间。不管怎样,两位电子把大部分时间花在两个细胞核之间的。GaAs has a slight ionic bonding force that is an electrostatic attractive force between each Ga- ion and its for neighboring As+ ions, or between each As+ ion and its four neighboring Ga- ions.砷化镓有轻微的离子键合力,是Ga -离子及其附近的As +离子之间的静电吸引力,或者是每个Ga +离子及其四个邻国Ga -离子之间的静电吸引力。This deficiency may be filled by one of the neighboring electrons, which results in a shift of the deficiency location, as from location A to location B.这个缺陷是由一个充满相邻的电子,有电子位置转移如从地点A移到地点B而产生的缺陷。1.16 Intrinsic Carrier Concentration1.17 Donors and AcceptorsIntrinsic adj. 本质的，固有的; impurities n. 杂质（impurity的复数）; effective density of states 有态密度; incremental adj. 增加的，增值的;donor 施者; acceptor 受者;extrinsic adj. 外在的；外来的；非固有的; mass action law 质量作用定律；agitation n. 激动；搅动；煽动；烦乱; excitation n. 激发，刺激；激励；激动;integrating n. 集成化；综合化v. 整合；积分；集成化（integrate的ing形式）;ComprehensionThis density n(E) is given by the product of density of allowed energy states per unit volume N(E) and by the probability of occupying that energy range F(E).这样的密度n(E)是由能量状态单位体积内所允许的浓度N(E)和占领能量范围的概率F(E)所得到的。The electron density in the conduction band is given by integrating N(E)F(E)dE from the bottom of the conduction band to the top of the conduction band.导带的电子密度是通过整合了N(E)F(E)dE从导带的底部到导带的顶部。By contrast most of those are occupied by electrons. Thus, the probability of an electron occupying one of these states in the valence band is nearly unity.与此形成鲜明对比的是他们大多数都是由电子所占用。因此,一个电子占领这些位置的其中一个的概率在价带中几乎是一致的。For shallow donors in silicon and gallium arsenide, there usually is enough thermal energy go supply the energy ED to ionize all donor impurities at room temperature and thus provide an equal number of electrons in the conduction band.对于在硅和砷化镓中的浅的施者,通常是足够的热能去提供了能量ED使施主杂质在室温下电离, 从而在导带中提供相等数量的电子。1.2 Carrier Transport Phenomena1.2.1 Carrier DriftNew words:Equipartition n. 物化学 均分; impact ionization 物 碰撞电离;mean free path 物 平均自由程; collision n.（意见，看法）的抵触，冲突;Saturation n. 饱和；色饱和度；浸透；磁化饱和; drift velocity 电子 漂移速度Succession n. 连续；继位；轮栽 演替; sufficiently adv. 充分地；足够地;Injection n. 注射；注射剂；充血；射入轨道;Superimposed adj. 地物 叠加的；上叠的；重叠的; Net n. 网；网络；净利；实价adj. 纯粹的；净余的vt. 得到；净赚；用网捕vi. 编网; scattering n. 散射；分散v. 散射；散布；驱散（scatter的ing形式）adj. 分散的;mobility n. 移动性；机动性；电子 迁移率; ComprehensionThe thermal motion of an individual electron may be visualized as a succession of random scattering from collisions with lattice atoms, impurity atoms, and other scattering centers. 一个单独电子的热运动的可以想象成与晶格原子,杂质原子,和其他散射中心碰撞而产生随机散射。1.2.2 Carrier Diffusion1.2.3 Carrier InjectionNew words:carrier injection 载体注入; spatial adj. 空间的；受空间条件限制的;excitation n. 激发，刺激；激励；激动; overwhelm vt. 压倒；淹没；受打击derivative n. 化学 衍生物，派生物adj. 派生的；引出的; gradient n. 数物 梯度；坡度；倾斜度adj. 倾斜的；步行的;bias n. 偏见；偏爱；斜纹；乖离率adj. 偏斜的vt. 使存偏见adv. 偏斜地; magnitude n. 大小；量级；地震 震级；重要；光度; ComprehensionThe diffusion current is proportional to the spatial derivative of the electron density. Diffusion current results from the random thermal motion of carriers in a concentration gradient.扩散电流与电子密度空间导数成正比的。扩散电流产生于随机热运动中载流子的浓度梯度。If the photon energy hr of the light is greater than the bandgap energy Eg of the semiconductor, where h is the Planck constant and v is the optical frequency, the photon is absorbed by semiconductor and an electron-hole pair is generated.如果光的光子能量hr比半导体的带隙能量大,其中h是普朗克常数和v是光学频率，光子被半导体吸收同时一个空穴对产生的。Extracurricular ReadingThe width of the bandgap in a semiconductor is small enough to allow for electrons to "jump" from the valence band into the conduction band and reciprocally. In addition, electrons can also "jump" from the conduction or valence band into permitted energy levels located inside the bandgap. These levels arise from the presence of trace impurity elements or crystalline defects. If, for instance, an electron jumps from the valence band into the conduction band, it becomes free to move in the crystal. At the same time, a free hole is created in the valence band, which is free to move as well. Such an event is called "carrier pair generation" or, more simply, "generation". An electron can also "fall" from the conduction band into the valence band. In this process called "recombination“ both a free electron and a free hole are lost. More complex generation/recombination processes can occur as well, in which permitted energy states within the bandgap are involved.带隙的宽度在半导体足够小,以便电子从价带“跳”进导带和参考。此外,电子也可以从传导或价带“跳”进坐落在带隙的允许能级。这些层面引起的微量杂质元素的存在或晶体的缺陷。例如,如果一个电子从价带跳进导带,它在晶体中就会变得自由移动。与此同时,一个自由的空穴在价带中创造,这是自由移动。这样的一个活动被称为“载体对一代”,或者更简单地说,“世代”。一个电子可以从导带“下落”到价带。在这个过程叫做“复合”一个自由的电子和一次自由的空穴消失了。在允许能量状态的带隙内参与的情况下,同样会更复杂的生成/重组过程发生。1.3 PN JunctionNew words:carrier injection 载体注入; quantitative adj. 定量的；量的，数量的;amplification n. 电子 放大（率）；扩大；详述; steady state 物 定态；恒稳态;transient state 瞬态；过渡状态; qualitative adj.定性的；质的，性质上的; bias n. 偏见；偏爱；斜纹；乖离率adj. 偏斜的vt. 使存偏见adv. 偏斜地; magnitude n. 大小；量级；地震 震级；重要；光度; overwhelm vt. 压倒；淹没；受打击; potential barrier 物 势垒；电子 位垒; voltmeter n. 电 伏特计，电压计ComprehensionThe contact potential appearing across W is a built-in potential, in that it is necessary to the maintenance of equilibrium at the junction; it does not imply any external potential.接触潜在的出现在W是一个内置的潜力,在于它对维持平衡的交汇处是必要的,它不含有任何外部的潜力。However, we could predict the lack of spatial variation of the Fermi level from thermodynamic arguments. Any gradient in the quasi-Fermi level implies a net current.然而,我们可以从热力学参数费米能级预测空间变异性的缺乏。准费米能级的任何梯度蕴含着净电流。Chapter 2 Semiconductor Device2.1 Bipolar Junction Transistor2.2 The MOSFET2.3 Microwave and Photonic Devices2.4 Summary2.1 Bipolar Junction TransistorNew words: endeavor n. vi. vt. 努力；尽力（等于endeavour）努力；conceive vi. 怀孕；设想；考虑vt. 怀孕；构思；以为；持有; postulating vt. 假定；要求；视为理所当然n. 基本条件；假定;unfolding n. 演变；生化 伸展；生物物理 解折叠v. 展开（unfold的ing形式）; Prime n. 初期； adj. 主要的；最好的；基本的vt. 使准备好；填装adv. 极好地vi. 作准备; Primitive n. 原始人adj. 原始的，简单的，粗糙的; artistic adj. 艺术的；风雅的；有美感的;supervisor n. 监督人，管理人；检查员; instinct n. 本能，直觉；天性adj. 充满着的;analog n.模拟；类似物adj.模拟的；有长短针的; analytical adj. 分析的；解析的；善于分析的;genuine adj. 真实的，真正的；诚恳的; adjective n. 形容词adj. 形容词的；从属的; inferior n. 下级；次品adj. 差的；自卑的；下级的，下等的; acronym n. 首字母缩略词;insofar as在的范围内；到程度; embodiment n. 体现；化身；具体化; proliferate. 增殖；扩散；激增vt. 使激增;constantly adv. 不断地；时常地; complementary adj. 补足的，补充的; dissipation n. 浪费；消散；物 损耗; vehicle n. 车辆 车辆；工具；交通工具；传播媒介ComprehensionHe was endeavoring, with sound engineering instinct, to conceive of a one-dimensional analog of the point-contact device as a way of opening the door to analytical investigation of its operation.他正在努力，以音响师的本能，以一个点接触器的一维模拟设想作为一个开放的大门去分析调查它的运算。Reduced to practice in 1951, it had for all practical purposes shouldered the point-contact device aside by the mid-1950s.在1951年减少实践中，它实际上肩负着20世纪50年代中期的点接触的设备预留The unfolding story of solid-state electronics can be told rather completely in terms of evolving fabrication technology, constantly expanding the number of options available to the device and integrated circuit designer.固态电子学的展开的故事可以讲述,而完全地依据进化的制造工艺,不断扩大设备和集成电路设计的大量可供选择。In integrated circuit today, the combination of silicon NPN and PNP devices is a growing practice because the resulting complementary circuits have important power-dissipation and performance advantages.在集成电路的今天,硅的NPN和PNP器件结合是发展的应用,因为产生的互补电路,具有重要的能量消耗和性能优点。2.1.1 Structure and TechnologyNew words:Parallelepiped n. 平行六面体; metallurgical adj. 冶金的；冶金学的; Pedestal n. 基架，基座；基础vt. 搁在台上；支持 analogous adj. 类似的；可比拟的; Ambiguity n. 含糊；不明确；暧昧；模棱两可的话; retain vt. 保持；雇；记住; Resemblance n. 相似；相似之处；相似物；肖像; prototypical adj. 原型的；典型的; Parasitic adj. 寄生的（等于parasitical）; Vestigial adj. 退化的；残余的；发育不全的;parallel n. 平行线；对比adj. 平行的；类似的，相同的vt. 使与平行; Grooves n. 细槽，凹槽（groove的复数）; simultaneously 同时发生地 remnant n. 剩余adj. 剩余的; Mount n. 山峰；底座；乘骑用马vt. 增加；爬上vi. 爬；上升; ComprehensionNonetheless, in a large number of devices having the newer structure, the currents through the junctions retain an essentially one-dimensional character, with important current fractions and current components being normal to the junction.然而,在大量的设备有更新的结构、电流通过结点保持一个本质上一维的特性,具有重要的电流分量和电流主份垂直于结点。Any electrical resistance to the passage of current through this thick region is a parasitic feature of the device that one would prefer to avoid.对于电流通过这根粗区域的通道的任何电阻是这个器件更愿意避免的一个寄生的特性。2.1.2 Biases and Terminal CurrentsNew words:acknowledge; disturbance; inevitable; inherent; subsume; qualitative; realism; geometric; magnitude; worthwhile; adhere;ComprehensionThis useful combination of properties has made the common-emitter configuration the most widely used of the several possibilities, a term acknowledging that the emitter terminal is common to the input and output ports.Note that in the cases of base and collector currents, the two most important to the common-emitter problem, the two current conventions are in agreement with respect to direction, a matter of significant convenience.2.2 The MOSFET 2.2.1 Basic MOSFET TheoryNew words:adherent; steam; vigorously; vex; ultimately; grasp; decisive; capacitor; electrode; manipulate; essence; modulate; spill; ohmically; imposing;ComprehensionStarting in the late 1950s, there procedures were moved along vigorously in the hope that they might provide at least a partial solution to the vexing problem of stabilizing surface conditions on silicon devices.Hence it is “unipolar” in the sense that carriers that are in the majority in the region providing the resistance are dominate in determining device properties.2.2.2 Field-Effect TransistorsNew words:intuitive; happenstance; metaphorical; lightning; feat; encroachment; areal; exponential; vapor; unprecedented; arena; niche; peculiar; hybrid; commonplace; mono-; infant; entity; grossly; chronicle; binary; ternary;ComprehensionThis was a case of having metaphorical lightning strike twice in the same place, because as we noted in Chapter 2.1, the same inventor had accomplished the same feat just a few years earlier with the BJT!【精品文档】第 8 页