最新半导体集成电路第1章PPT课件.ppt
S0I=I exp() 1TVVS0IpnonpopnD PD PAqLLS0I=IeTVVthVVS0I=IeTVVthVVJ1J2npn+CBE2DCCSI=I exp() 1TVV1DEESI=I exp() 1TVV121ESCSI =I(e1)I(e1)TTVVVVA122ESCSI =BI (e1)I(e1)TTVVVV111200ERCVVIIAII 222100CFEVVIIBII 12ES12CSI(e1)11I(e1)TTVVRVFVII1122EBCIIIIIII 12ESCS1I(e1)111I(e1)TTVERVBFRVVCFIIIFESRCSSIIII IS S是是I IESES，I ICSCS的公共部分，为晶体管饱和电流。的公共部分，为晶体管饱和电流。1111SESFSCSRII (e1)(e1)II(e1)(e1)TTTTVVVVDEVVVVDCII令 11SSI (e1)I (e1)TTVVCCVVECII则 CCEC11I11I11FEFRBFRCRIIISpn+pnBECPNPNPN11232123312300DRDDFDDSRDDSRDDIIIIIIIIIIII 且 112233EBCSIIIIIIIIII 代入I1，I2，I3的表达式表示为矩阵形式123(1)1011(1)1101(1)TTTVVESERVBFRSRVCSCFSFSRVVSSFSSIeIIIeIIIe 这就是四层三结晶体管E-M模型0.990.01FSF 16151310,10,10ESCSSSIAIAIAeFTVVe1eFFTTVVVV e11FTVV eFTVV10111101BETVERVESBFRSRCSCFSFSRSSSSFIIeIIIII 1510CoffCSIIA1310CoffCSIIA(1)(1)BCTBCTBCTBCTVVERCSVVBRCSVVCSFCSVVSSFCSIIeIIeIIeIIe BCTVVSFCSSeIIRESSFII1RBSSFII 1SFCSSFIIS (Cp)pn+pnBn (Ep)EC (Bp)BCBECESCCEVVVVV 又(1)(1)(1)BCBETTBCBETTVVVVCFESSFCSVVVVBFESRCSIIeIeIIeIe()exp()(1)(1)()exp()(1)CEFESCSSFCTCEBFESCSRTVIIIVVIIIV(1)(1)()ln(1)()CSSFRCBCESTESFRCBIIIVVIIIBCISI(1)(1)ln(1)CSSFRCESTESFRISVVIS11lnlnCSSFSFCESTTESFFIVVVIS 而对三层结构极度饱和时而对三层结构极度饱和时1lnCESTFVV故：寄生故：寄生PNPPNP管使饱和压降下降。管使饱和压降下降。物理意义：集电极电流被衬底结漏电流分流下降，物理意义：集电极电流被衬底结漏电流分流下降，故故V Vcesces下降。下降。此时衬底漏电流较大：此时衬底漏电流较大：,CEBSSSIIIIII均反比于均反比于IsIs，故应降低。，故应降低。 当 时，时，各项比值小于各项比值小于1。0.98 ,0.01 ,0.1 ,0.1ESFRBEBCCSIVVVIexp()BCSSFCSTVIIV O16A uT = 1060C , N= 1.81010 8.5 10nS10 5 10pS2npCjsCjcCjsCjsCjeRc2P Rc3 Rc1CEnn+Beseeerrrr接触体接触ceeRrS接触2cmAlN61 9 10cRcm210 10eSm1 3csr 123cscccrrrr41 结束语结束语
