GOOD集成电路工艺和版图设计EDA讲座.ppt

集成电路工艺和版图设计概述Jian FangIC Design Center,UESTCIC常用术语园片：硅片芯片(Chip,Die)：6、8：硅（园）片直径：1 25.4mm6150mm;8200mm;12300mm;亚微米1m的设计规范深亚微米 0反型层 沟道源（Source）S漏（Drain）D栅（Gate）G栅氧化层厚度：50埃1000埃（5nm100nm）VT阈值电压电压控制N N沟沟MOSMOS（NMOSNMOS）P型衬底，受主杂质；栅上加正电压，表面吸引电子，反型，电子通道；漏加正电压，电子从源区经N沟道到达漏区，器件开通。N衬底p+p+漏源栅栅氧化层场氧化层沟道P P沟沟MOSMOS（PMOSPMOS）GDSVTVGSID+-VDS 0 N型衬底，施主杂质，电子导电；栅上加负电压，表面吸引空穴，反型，空穴通道；漏加负电压，空穴从源区经P沟道到达漏区，器件开通。CMOS CMOS：Complementary Symmetry Metal Oxide Semiconductor 互补对称金属氧化物半导体特点：低功耗VSSVDDVoViCMOS倒相器PMOSNMOSI/OI/OVDDVSSCCCMOS传输门N-SiP+P+n+n+P-阱DDVoVGVSSSSVDDCMOS倒相器截面图CMOS倒相器版图pwellactivepolyN+implantP+implantomicontactmetalA NMOS ExamplepwellPwellActivePolyN+implantP+implantOmicontactMetalNtype SiSiO2光刻胶光刻胶光光MASK PwellNtype SiSiO2光刻胶光刻胶光刻胶光刻胶MASK PwellNtype SiSiO2光刻胶光刻胶光刻胶光刻胶SiO2Ntype SiSiO2SiO2PwellpwellactivePwellActivePolyN+implantP+implantOmicontactMetalNtype SiSiO2PwellSiO2光刻胶光刻胶MASK activeMASK ActiveSi3N4Ntype SiSiO2PwellSiO2光刻胶光刻胶光刻胶光刻胶MASK activeMASK ActiveSi3N4Ntype SiSiO2PwellSiO2光刻胶光刻胶光刻胶光刻胶Si3N4Ntype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧PwellPwellSi3N4Ntype SiSiO2Pwell场氧场氧场氧场氧场氧场氧PwellPwellNtype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧PwellPwellpolyactivepwellpolyPwellActivePolyN+implantP+implantOmicontactMetalNtype SiSiO2PwellSiO2MASK poly场氧场氧场氧场氧场氧场氧PwellPwellpoly光刻胶光刻胶Ntype SiSiO2PwellSiO2MASK poly场氧场氧场氧场氧场氧场氧PwellPwell光刻胶光刻胶polyNtype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧PwellPwellpolyNtype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧PwellPwellpolyactivepwellpolyN+implantPwellActivePolyN+implantP+implantOmicontactMetalNtype SiSiO2PwellSiO2MASK N+场氧场氧场氧场氧场氧场氧PwellPwellpoly光刻胶光刻胶Ntype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧PwellPwell光刻胶光刻胶polyN+implantS/DactivepwellpolyP+implantPwellActivePolyN+implantP+implantOmicontactMetalNtype SiSiO2PwellSiO2MASK N+场氧场氧场氧场氧场氧场氧PwellPwellpoly光刻胶光刻胶光光S/D