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11 East Steel Rd.Morrisville,PA 19067Phone:215-547-1015Fax:215-547-Gelest,Inc.Provides technical expertise in silicon and metal-organic materialsfor applications in alternative energy.The core manufacturing technology of Gelest is silanes,silicones and metal-organics with thecapability to handle flammable,corrosive and air sensitive materials.Headquartered in Morrisville,PA Gelest is recognized world-wide as an innovative manufacturer and supplier in commercial and research quantities,serving advanced technology markets through a material science driven approach.Organosilicon and Metal-Organic materials from Gelest are helping to meet the challenges for:Meeting the Demands of Renewable Energy:Capture&StorageAdvanced Batteries Capacitors CollectorCollectorelectrodeelectrodeActivatedcarbon electrode(2)With electric fieldHoleElectronPositive ionNegative ion(1)Without electric fieldUltracapacitorOrganosilicon andMetal-Organic MaterialsLithium Cathodes:CXFE030SID4220.5SIB1824.82OMPH066CXLI083Ionic Liquids provide broad voltage windows,high ionic conductivities and low vapor pressureUltracapacitors(electrochemical double layer capacitors EDLCs)offer high power and energy densityby utilizing high surface area porous carbon electrodes and ultra-thin dielectric distances.Broadervoltage windows are anticipated with hydrogel or organic electrolytes.For additional information on Gelests Silicon and Metal-Organic based products or to enquire how we may assist in Enabling Your Technology,please contact:Solid Polymer,Gel Electrolyte Systems,Li-SPE(lithium solid polymer electrolyte systems).Organosilicon andMetal-Organic MaterialsCathode FabricationUreasil Gel ElectrolytesLi SaltsLi,Na ComplexSIB1550.0SIB1856.0Electrolyte Acid Scavengers Gel Electrolytes2010 Gelest,Inc.Electroactive and Dielectric Materials-including membranes,electrodes and electrolytesWater Immiscible Fluids-for electrolyte,heat transfer and lubricant applicationsStructural Materials-including mesoporous ceramics and advanced compositesComponent Protection Materials-including passivation and encapsulationSol-Gel Coatings-for AR(anti-reflection)and abrasion resistanceOptical Materials-including band-gap and index materialsGeneration,Capture and SPhotovoltaic Hydroen fuel is channeled through field flow plates to the anode on one side of the fuel cell,while oxygen from the air is channeled to the cathode on the other side of the cell.1At the anode,a platinum catalyst causes the hydrogen to split into positive hydrogen ions(protons)and negatively charged electrons.2At the cathode,the electrons and positively charged hydrogen ions combine with oxygen to form water,which flows out of the cell.4The Polymer Electrolyte Membrane(PEM)allows only the positively chared ions to pass through it to the cathode.The negatively charged electrons must travel along an external circuit to the cathode,creating an electrial current.3 Electrodes,Solid State Electrolytes,Proton-conducting solids Ceria(cerium oxides)by sol-gel and pyrolytic depositionCatalysts NanowiresWind Turbine Turbine Lubricants for Low Temperature EnvironmentsCoupling Agents for CompositesPassivation Layers-coatings that prevent carrier recombination:Silicon Nitride,Silicon Carbide and Silicon Carbonitride perform a variety of roles on the topmost active layer ofphotovoltaic devices.Gelest provides both single-source precursors and precursors used in combination with asecondary reactant such as ammonia or,with PECVD systems,nitrogen.Anti-Reflection/All-Angle Coatings:Gelest provides a wide-range of index materials based on silicon,germanium,tantalum and other metal-organics for direct use or by thermal or hydrolytic conversion.These materials are used in step-index,gradient-index or quarter-wavestacks.Applications range from AR-coatings to Bragg mirrors and reflectors.airsubstratequarter-wave thickness of high-index materialquarter-wave thickness of low-index materialRefected light=combination of 7 beamsIncident Lightn=1-airnH=high indexnH=high indexnH=high indexnL=low indexnL=low indexnS=substrateQuarter-Wave StackAKC159.8GEG5001CXCD045AKS704SIB1871.0SNB1100SNT7560CXSV060SIT8715.6SIT8718.0CXSV080OMAL086OMZN017AKA090SNB2000SND3255SIC2415.0CXCE041GEG5800SIA0200.0SIM6487.4SIG5832.0SIM6577.0SIT7283.0SIT8723.0AKC186SIB1817.0SIB1811.7AKI362.4SIB1873.0SIC2268.5SIM6515.0AKT810SIT7110.0SIT8715.5SID2790.0SIT7123.0Transparent Conductive Oxide Coatings-TCOsGelest offers a range of materials that can be deposited without the vacuum requirements of sputtering techniques.Alternative material technologies that eliminate indium include zinc,antimony and tin based oxides that can be fluorine doped.Conductive Pastes:Organic compatible silver salts are used in conjunction with silver powder to formulate front-side grid-like contacts.Barriers:Backside Polymer Films and Encapsulants.Optically Clear Silicone Encapsulantssilicone on glass for concentration PVMonomers for High Temperature Proton ExchangeMembranes Inorganic Scaffold Materials:Silica,alumina,aluminosilicates.Functionalizing agents for porous silica membranes.Siliglide10 low-friction,“glide”surfaces for glass,vitreous and metal substrates Seramic SI-A dielectric,thermally resistant SiO2coatings,deep UV curable Gelest OE41 optically clear 1.41 flexible 2-component low temperature cure Gelest OE42 optically clear 1.42 flexible 2-component low temperature cure Gelest OE43 optically clear 1.43 flexible 2-component low temperature cure Aquaphile AQ water-wettable anti-fog coating for glass and ceramicsProton Mobility FacilitatorsSilahydrocarbonsHigh-Speed PolyesterPolyesterMoisture Resistant EpoxySilicate EstersLifetime Extension for Polyester Back-SheetsAdhesion PromotersSnO:F,ZnO:Al,SbTO:Gelest offers precursors for vapor phase and solution phase deposition of Groups IlI-V,II-VI,and IV(Si/Ge)band-gap materials.CdTe/CdSe Cadmium Telluride,Cadmium Selenide and CIGS(Copper Indium Gallium Selenide)precursors are available for vapor phase,solution and pyrolytic deposition in applications ranging from large area arrays to quantum dots.Gelest offers volatile silylated and non-volatile dithiocarbamate and carboxylate metal chalcogenide precursors.Triple Junction GaAs Solar Cells/Metamorphic Multijunction Solar Cells.Germanium layers provide lattice matchfor growth of GaAs in multi band-gap photovoltaics.Band-gap Materials:GenerationGenerationGenerationPolymerWaterSO3SO3SO3SO3SO3SO3SO3SO3Fuel Cells Proton Exchange Membrane FCPhotovoltaic Hydroen fuel is channeled through field flow plates to the anode on one side of the fuel cell,while oxygen from the air is channeled to the cathode on the other side of the cell.1At the anode,a platinum catalyst causes the hydrogen to split into positive hydrogen ions(protons)and negatively charged electrons.2At the cathode,the electrons and positively charged hydrogen ions combine with oxygen to form water,which flows out of the cell.4The Polymer Electrolyte Membrane(PEM)allows only the positively chared ions to pass through it to the cathode.The negatively charged electrons must travel along an external circuit to the cathode,creating an electrial current.3Electrodes,Solid State Electrolytes,Proton-conducting solids Ceria(cerium oxides)by sol-gel and pyrolytic depositionCatalysts NanowiresWind Turbine Turbine Lubricants for Low Temperature EnvironmentsCoupling Agents for CompositesPassivation Layers-coatings that prevent carrier recombination:Silicon Nitride,Silicon Carbide and Silicon Carbonitride and perform a variety of roles on the topmost active layerof photovoltaic devices.Gelest provides both single-source precursors and precursors used in combination witha secondary reactant such as ammonia or,with PECVD systems,nitrogen.Anti-Reflection/All-Angle Coatings:Gelest provides a wide-range of index materials based on silicon,germanium,tantalum and other metal-organics for direct use or by thermal or hydrolytic conversion.These materials are used in step-index,gradient-index or quarter-wavestacks.Applications range from AR-coatings to Bragg mirrors and reflectors.airsubstratequarter-wave thickness of high-index materialquarter-wave thickness of low-index materialReflected light=combination of 7 beamsIncident Lightn=1-airnH=high indexnH=high indexnH=high indexnL=low indexnL=low indexnS=substrateQuarter-Wave StackAKC159.8GEG5001CXCD045AKS704SIB1871.0SNB1100SNT7560CXSV060SIT8715.6SIT8718.0CXSV080OMAL086OMZN017AKA090SNB2000SND3255SIC2415.0CXCE041GEG5800SIA0200.0SIM6487.4SIG5832.0SIM6577.0SIT7283.0SIT8723.0AKC186SIB1817.0SIB1811.7AKI362.4SIB1873.0SIC2268.5SIM6515.0AKT810SIT7110.0SIT8715.5SID2790.0SIT7123.0Transparent Conductive Oxide Coatings-TCOsGelest offers a range of materials that can be deposited without the vacuum requirements of sputtering techniques.Alternative material technologies that eliminate indium include zinc,antimony and tin based oxides that can be fluorine doped.Conductive Pastes:Organic compatible silver salts are used in conjunction with silver powder to formulate front-side grid-like contacts.Barriers:Backside Polymer Films and Encapsulants.Optically Clear Silicone Encapsulantssilicone on glass for concentration PVMonomers for High Temperature Proton ExchangeMembranes Inorganic Scaffold Materials:Silica,alumina,aluminosilicates.Functionalizing agents for porous silica membranes.Siliglide10 low-friction,“glide”surfaces for glass,vitreous and metal substrates Seramic SI-A dielectric,thermally resistant SiO2coatings,deep UV curable Gelest OE41 optically clear 1.41 flexible 2-component low temperature cure Gelest OE42 optically clear 1.42 flexible 2-component low temperature cure Gelest OE43 optically clear 1.43 flexible 2-component low temperature cure Aquaphile AQ water-wettable anti-fog coating for glass and ceramicsProton Mobility FacilitatorsSilahydrocarbonsHigh-Speed PolyesterPolyesterMoisture Resistant EpoxySilicate EstersLifetime Extension for Polyester Back-SheetsAdhesion PromotersSnO:F,ZnO:Al,SbTO:Gelest offers precursors for vapor phase and solution phase deposition of Groups IlI-V,II-VI,and IV(Si/Ge)band-gap materials.CdTe/CdSe Cadmium Telluride,Cadmium Selenide and CIGS(Copper Indium Gallium Selenide)precursors are available for vapor phase,solution and pyrolytic deposition in applications ranging from large area arrays to quantum dots.Gelest offers volatile silylated and non-volatile dithiocarbamate and carboxylate metal chalcogenide precursors.Triple Junction GaAs Solar Cells/Metamorphic Multijunction Solar Cells.Germanium layers provide lattice matchfor growth of GaAs in multi band-gap photovoltaics.Band-gap Materials:GenerationGenerationGenerationPolymerWaterSO3SO3SO3SO3SO3SO3SO3SO3Fuel Cells Proton Exchange Membrane FCPhotovoltaic Hydroen fuel is channeled through field flow plates to the anode on one side of the fuel cell,while oxygen from the air is channeled to the cathode on the other side of the cell.1At the anode,a platinum catalyst causes the hydrogen to split into positive hydrogen ions(protons)and negatively charged electrons.2At the cathode,the electrons and positively charged hydrogen ions combine with oxygen to form water,which flows out of the cell.4The Polymer Electrolyte Membrane(PEM)allows only the positively chared ions to pass through it to the cathode.The negatively charged electrons must travel along an external circuit to the cathode,creating an electrial current.3Electrodes,Solid State Electrolytes,Proton-conducting solids Ceria(cerium oxides)by sol-gel and pyrolytic depositionCatalysts NanowiresWind Turbine Turbine Lubricants for Low Temperature EnvironmentsCoupling Agents for CompositesPassivation Layers-coatings that prevent carrier recombination:Silicon Nitride,Silicon Carbide and Silicon Carbonitride and perform a variety of roles on the topmost active layerof photovoltaic devices.Gelest provides both single-source precursors and precursors used in combination witha secondary reactant such as ammonia or,with PECVD systems,nitrogen.Anti-Reflection/All-Angle Coatings:Gelest provides a wide-range of index materials based on silicon,germanium,tantalum and other metal-organics for direct use or by thermal or hydrolytic conversion.These materials are used in step-index,gradient-index or quarter-wavestacks.Applications range from AR-coatings to Bragg mirrors and reflectors.airsubstratequarter-wave thickness of high-index materialquarter-wave thickness of low-index materialReflected light=combination of 7 beamsIncident Lightn=1-airnH=high indexnH=high indexnH=high indexnL=low indexnL=low indexnS=substrateQuarter-Wave StackAKC159.8GEG5001CXCD045AKS704SIB1871.0SNB1100SNT7560CXSV060SIT8715.6SIT8718.0CXSV080OMAL086OMZN017AKA090SNB2000SND3255SIC2415.0CXCE041GEG5800SIA0200.0SIM6487.4SIG5832.0SIM6577.0SIT7283.0SIT8723.0AKC186SIB1817.0SIB1811.7AKI362.4SIB1873.0SIC2268.5SIM6515.0AKT810SIT7110.0SIT8715.5SID2790.0SIT7123.0Transparent Conductive Oxide Coatings-TCOsGelest offers a range of materials that can be deposited without the vacuum requirements of sputtering techniques.Alternative material technologies that eliminate indium include zinc,antimony and tin based oxides that can be fluorine doped.Conductive Pastes:Organic compatible silver salts are used in conjunction with silver powder to formulate front-side grid-like contacts.Barriers:Backside Polymer Films and Encapsulants.Optically Clear Silicone Encapsulantssilicone on glass for concentration PVMonomers for High Temperature Proton ExchangeMembranes Inorganic Scaffold Materials:Silica,alumina,aluminosilicates.Functionalizing agents for porous silica membranes.Siliglide10 low-friction,“glide”surfaces for glass,vitreous and metal substrates Seramic SI-A dielectric,thermally resistant SiO2coatings,deep UV curable Gelest OE41 optically clear 1.41 flexible 2-component low temperature cure Gelest OE42 optically clear 1.42 flexible 2-component low temperature cure Gelest OE43 optically clear 1.43 flexible 2-component low temperature cure Aquaphile AQ water-wettable anti-fog coating for glass and ceramicsProton Mobility FacilitatorsSilahydrocarbonsHigh-Speed PolyesterPolyesterMoisture Resistant EpoxySilicate EstersLifetime Extension for Polyester Back-SheetsAdhesion PromotersSnO:F,ZnO:Al,SbTO:Gelest offers precursors for vapor phase and solution phase deposition of Groups IlI-V,II-VI,and IV(Si/Ge)band-gap materials.CdTe/CdSe Cadmium Telluride,Cadmium Selenide and CIGS(Copper Indium Gallium Selenide)precursors are available for vapor phase,solution and pyrolytic deposition in applications ranging from large area arrays to quantum dots.Gelest offers volatile silylated and non-volatile dithiocarbamate and carboxylate metal chalcogenide precursors.Triple Junction GaAs Solar Cells/Metamorphic Multijunction Solar Cells.Germanium layers provide lattice matchfor growth of GaAs in multi band-gap photovoltaics.Band-gap Materials:GenerationGenerationGenerationPolymerWaterSO3SO3SO3SO3SO3SO3SO3SO3Fuel Cells Proton Exchange Membrane FC11 East Steel Rd.Morrisville,PA 190
