DTM4015规格书(最新版).pdf

1P-Channel 30 V(D-S)MOSFETFEATURES100%Rg and UIS TestedAPPLICATIONSAdaptor SwitchLoad SwitchPower ManagementMobile ComputingNotes:a.Surface mounted on 1 x 1 FR4 board.b.t=10 s.c.Maximum under steady state conditions is 81 C/W.d.Package limited.PRODUCT SUMMARY VDS(V)RDS(on)()Max.ID(A)Qg(Typ.)-400.0094 at VGS=-10 V-18d35.4 nC0.0132 at VGS=-4.5 V-18dS G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS(TA=25 C,unless otherwise noted)ParameterSymbolLimitUnitDrain-Source Voltage VDS-40VGate-Source Voltage VGS 20Continuous Drain Current(TJ=150 C)TC=25 CID-18dATC=70 C-18dTA=25 C-14.7a,bTA=70 C-11.7a,bPulsed Drain Current(t=300 s)IDM-70Continuous Source-Drain Diode CurrentTC=25 CIS-18dTA=25 C-3a,bAvalanche CurrentL=0.1 mHIAS-20Single-Pulse Avalanche EnergyEAS20mJMaximum Power DissipationTC=25 CPD52WTC=70 C33TA=25 C3.7a,bTA=70 C2.4a,bOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CSoldering Recommendations(Peak Temperature)e,f260THERMAL RESISTANCE RATINGSParameterSymbol Typical MaximumUnitMaximum Junction-to-Ambienta,ct 10 sRthJA2633C/WMaximum Junction-to-CaseSteady State RthJC1.92.4www.din-tek.jp DTM4?SSDDDSGDSO-85678Top View23412Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.SPECIFICATIONS(TJ=25 C,unless otherwise noted)ParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-40VVDS Temperature CoefficientVDS/TJID=-250 A-23mV/CVGS(th)Temperature CoefficientVGS(th)/TJ4.6Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1-2.5VGate-Source LeakageIGSSVDS=0 V,VGS=20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-40 V,VGS=0 V-1AVDS=-40 V,VGS=0 V,TJ=55 C-5On-State Drain CurrentaID(on)VDS -10 V,VGS=-10 V-30ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-15 A 0.00760.0094VGS=-4.5 V,ID=-10 A 0.01080.0132Forward Transconductanceagfs VDS=-10 V,ID=-15 A 50SDynamicbInput CapacitanceCiss VDS=-15 V,VGS=0 V,f=1 MHz4280pFOutput CapacitanceCoss 427Reverse Transfer CapacitanceCrss 382Total Gate ChargeQg VDS=-15 V,VGS=-10 V,ID=-10 A73110nCVDS=-15 V,VGS=-4.5 V,ID=-10 A35.453Gate-Source ChargeQgs 10.6Gate-Drain ChargeQgd 11.6Gate ResistanceRgf=1 MHz0.41.63.2Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VGEN=-10 V,Rg=1 1122nsRise Timetr1122Turn-Off DelayTimetd(off)4590Fall Timetf816Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VGEN=-4.5 V,Rg=1 55100Rise Timetr82150Turn-Off DelayTimetd(off)4080Fall Timetf1326Drain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentISTC=25 C-18APulse Diode Forward CurrentISM-70Body Diode VoltageVSDIS=-3 A,VGS=0 V-0.74-1.2VBody Diode Reverse Recovery TimetrrIF=-10 A,dI/dt=100 A/s,TJ=25 C1836nsBody Diode Reverse Recovery ChargeQrr816nCReverse Recovery Fall Timeta7nsReverse Recovery Rise Timetb11www.din-tek.jp DTM4?3TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Output CharacteristicsOn-Resistance vs.Drain CurrentGate Charge0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)VGS=2 VVGS=3 V VGS=10 V thru 4 V 0.0000 0.0040 0.0080 0.0120 0.0160 0.0200 0 16 32 48 64 80 RDS(on)-On-Resistance()ID-Drain Current(A)VGS=4.5 V VGS=10 V 0 2 4 6 8 10 01530456075 VGS-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VDS=10 V VDS=20 V VDS=15 V ID=10 A Transfer CharacteristicsCapacitanceOn-Resistance vs.Junction Temperature0 16 32 48 64 80 0.0 1.0 2.0 3.0 4.0 5.0 ID-Drain Current(A)VGS-Gate-to-Source Voltage(V)TC=25 C TC=125 C TC=-55 C 0 1200 2400 3600 4800 6000 0 4 8 12 16 20 C-Capacitance(pF)VDS-Drain-to-Source Voltage(V)Ciss Coss Crss0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50-25 0 25 50 75 100 125 150 RDS(on)-On-Resistance(Normalized)TJ-Junction Temperature(C)ID=10 A VGS=10 V VGS=4.5 V www.din-tek.jp DTM4?4TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Source-Drain Diode Forward VoltageThreshold Voltage0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IS-Source Current(A)VSD-Source-to-Drain Voltage(V)TJ=150 C TJ=25 C-0.5-0.2 0.1 0.4 0.7 1.0-50-25 0 25 50 75 100 125 150 VGS(th)Variance(V)TJ-Temperature(C)ID=250 A ID=1 mA On-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-Ambient0.000 0.010 0.020 0.030 0.040 0.050 0246810RDS(on)-On-Resistance()VGS-Gate-to-Source Voltage(V)TJ=125 C TJ=25 C ID=15 A 0 20 40 60 80 100 0.0010.010.1110Power(W)Time(s)Safe Operating Area0.01 0.1 1 10 100 0.010.1110100ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specified 100 s 100 ms Limited by RDS(on)*1 ms IDM Limited TA=25 C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC ID Limited www.din-tek.jp DTM4?5MOSFET TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)*The power dissipation PD is based on TJ(max.)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Current Derating*0 14 28 42 56 70 0 25 50 75 100 125 150 ID-Drain Current(A)TC-Case Temperature(C)Limited by Package Power,Junction-to-Case013263952650255075100125150TC-Case Temperature(C)Power(W)Power,Junction-to-Ambient0.00.40.81.21.62.00255075100125150TA-Ambient Temperature(C)Power(W)www.din-tek.jp DTM4?6TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Normalized Thermal Transient Impedance,Junction-to-Ambient0.01 0.1 1 0.00010.0010.010.11101001000Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration(s)Duty Cycle=0.5 0.2 0.1 0.05 0.02 Single Pulse t1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=81 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedNormalized Thermal Transient Impedance,Junction-to-Case0.01 0.1 1 0.00010.0010.010.1110Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration(s)Duty Cycle=0.5 0.2 0.1 0.05 0.02 Single Pulse www.din-tek.jp DTM4?1DIMMILLIMETERSINCHESMinMaxMinMaxA1.351.750.0530.069A10.100.200.0040.008B0.350.510.0140.020C0.190.250.00750.010D4.805.000.1890.196E3.804.000.1500.157e1.27 BSC0.050 BSCH5.806.200.2280.244h0.250.500.0100.020L0.500.930.0200.037q0808S0.440.640.0180.026ECN:C-06527-Rev.I,11-Sep-06DWG:549843125687HEh x 45CAll Leadsq0.101 mm0.004LBA1AeD0.25 mm(Gage Plane)SOIC(NARROW):8-LEADJEDEC Part Number:MS-012SPackage Informationwww.din-tek.jp1RECOMMENDED MINIMUM PADS FOR SO-80.246(6.248)Recommended Minimum PadsDimensions in Inches/(mm)0.172(4.369)0.152(3.861)0.047(1.194)0.028(0.711)0.050(1.270)0.022(0.559)Application Notewww.din-tek.jp1DisclaimerALL PRODUCT,PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVERELIABILITY,FUNCTION OR DESIGN OR OTHERWISE.Din-Tek Intertechnology,Inc.,its affiliates,agents,and employees,and all persons acting on its or their behalf(collectively,“Din-Tek”),disclaim any and all liability for any errors,inaccuracies or incompleteness contained in 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