半导体封装制程与设备材料知识介绍知识讲解.ppt
半导体封装制程与设备材半导体封装制程与设备材料知识介绍料知识介绍半导体封装制程概述半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）封装后段（MARK-PLANT）测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半半 导导 体体 制制 程程Oxidization(氧化处理)Lithography(微影)Etching(蚀刻)Diffusion Ion Implantation(扩散离子植入)Deposition(沉积)Wafer Inspection(晶圆检查)Grind&Dicing(晶圓研磨及切割)Die Attach(上片)WireBonding(焊线)Molding(塑封)Package(包装)Wafer Cutting(晶圆切断)Wafer Reduce(晶圆减薄)Laser Cut&package saw(切割成型)Testing(测试)Laser mark(激光印字)IC制造制造开始开始前段結束前段結束后段封装开始后段封装开始製造完成製造完成封装型式概述封装型式概述IC封装型式可以分为两大类，一为引脚插入型，另一为表面黏着型 构装型态构装名称常见应用产品Single In-Line Package(SIP）Power TransistorDual In-Line Package(DIP）SRAM,ROM,EPROM,EEPROM,FLASH,Micro controllerZigzag In-Line Package(ZIP）DRAM,SRAMSmall Outline Package(SOP）Linear,Logic,DRAM,SRAMPlastic Leaded Chip Carrier(PLCC）256K DRAM,ROM,SRAM,EPROM,EEPROM,FLASH,Micro controllerSmall Outline Package(SOJ）DRAM,SRAM,EPROM,EEPROM,FLASHQuad Flat Package(QFP）MicroprocessorBALL Grid Array(BGA）Microprocessor封封 裝裝 型型 式式 (PACKAGE)Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)8 64DIPDual In-linePackagePlastic2.54 mm(100miles)1 direction lead325SIPSingle In-linePackage封封 裝裝 型型 式式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic2.54 mm(100miles)1 directionlead1624ZIPZigzagIn-linePackagePlastic1.778 mm(70miles)20 64S-DIPShrinkDual In-linePackage封封 裝裝 型型 式式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)half-size pitch in the width direction2432SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54 mm(100miles)PBGAPin GridArray封封 裝裝 型型 式式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic1.27 mm(50miles)2 direction lead8 40SOPSmallOutlinePackagePlastic1.0,0.8,0.65 mm4 direction lead88200QFPQuad-FlatPack封封 裝裝 型型 式式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27,0.762 mm(50,30miles)2,4 direction lead2080FPGFlatPackageof GlassCeramic1.27,1.016,0.762 mm(50,40,30 miles)2040LCCLeadlessChipCarrier封封 裝裝 型型 式式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27 mm(50miles)j-shape bend4 direction lead18124PLCCPlastic LeadedChip CarrierCeramic0.5 mm32200VSQFVerySmallQuadFlatpackSanDisk Assembly Main ProcessDie Cure(Optional)Die BondDie SawPlasmaCard AsyMemory TestCleanerCard TestPacking for OutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUV Cure(Optional)Laser markPost Mold CureMoldingLaser CutPackage SawWire Bond SMT(Optional)半导体设备供应商介绍半导体设备供应商介绍-前道部分前道部分前道部分前道部分PROCESSVENDORMODELSMT-PRINTERDEKHOR-2ISMT CHIP MOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINLINE GRINDER&POLISHACCRETECHPG300RMSTANDALONE GRINDERDISCO8560DETAPINGNITTOMA3000WAFER MOUNTERNITTOMA3000DICING SAWDISCODFD6361TSKA-WD-300TPROCESSVENDORMODELDIE BONDHITACHIDB700ESECESEC2007/2008ASMASM889898CUREOVENC-SUNQDM-4SWIRE BONDERK&SK&SMAXUMULTRASKWUTC-2000ASMEagle60PLASMA CLEANMARCHAP1000TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA3.8半导体设备供应商介绍半导体设备供应商介绍-前道部分前道部分前道部分前道部分半导体设备供应商介绍半导体设备供应商介绍PROCESSVENDORMODELINKMARKE&RE&RTECA-PRINTPR-601LASER MARKGPMSE+SE39+SE36+SE45鈦昇BLAZON-2600BALL ATTACHVANGUARDVAI6300AMSAMS1500iD/DYAMADACU-1028-1GPMSE00+SH01+SH02+SE07FORMINGYAMADACU-1029-1GPMSEH01+SH02+SH25半导体设备供应商介绍半导体设备供应商介绍PROCESSVENDORMODELSINGULATIONGPMSN39+SH52YAMADACUPLATINGMECOEDF+EPL2400AEMSBP2400-EDLEAD SCANRVSILS-7700ICOS9450EVER-TECHTS-60半导体设备供应商介绍半导体设备供应商介绍常用术语介绍常用术语介绍1.SOP-Standard Operation Procedure2.FMEA-Failure Mode Effect Analysis3.SPC-Statistical Process Control 4.DOE-DesignOfExperiment5.IQC/OQC-Incoming/OutingQualityControl6.MTBA/MTBF-betweenassit/Failure7.UPH-UnitsPerHour8.CPK-品质参数晶圆晶圆研磨研磨(GRINDING)1.GRINDING 工艺l研磨1.研磨分為粗磨與細磨,晶圓粗糙度需小於0.08um.2.細磨厚度在1020um之間,而二次研磨參數中,細磨厚度為15um(二次研磨變更作業膠膜為230um).3.研磨標準厚度:a.HSBGA:1113MIL標準研磨厚度為12MILb.PBGA:1116MIL標準研磨厚度為12MIL.c.LBGA:9.510.5MIL標準研磨厚度為10MIL.5.研磨時機器會先量側晶片厚度以此為初始值,粗磨厚度及最終厚度(即細磨要求的厚度).Spindle1粗磨spindle2細磨清洗區離心除水離心除水背面朝上Wafer研磨時晶圓與SPINDLE轉向2.Grinding 相关材料A TAPE麦拉B Ginding 砂轮C WAFER CASSETTLE工艺对TAPE麦拉的要求：1。MOUNTNo delamination STRONG2。SAW ADHESIONNo die flying offNo die crack工艺对麦拉的要求：3。EXPANDINGTAPE Die distanceELONGATION Uniformity 4。PICKING UPWEAKADHESIONNo contaminationTAPE種類:a.ADWILLD-575UV膠膜(黏晶片膠膜白色)厚度150UMb.ADWILL-295黏晶片膠膜黑色厚度120UMc.ADWILLS-200熱封式膠帶(去膠膜膠帶)白色厚度d.FURUKAWAUC-353EP-110AP(PRE-CUT)UV膠膜白色厚度110ume.FURUKAWAUC-353EP-110AUV膠膜白色厚110umf.FURUKAWAUC-353EP-110BPUVTAPE白色厚110um.g.ADWILLG16P370黑色厚80UM.h.NITTO224SP75UM3.Grinding 辅助设备A Wafer Thickness Measurement 厚度测量仪 一般有接触式和非接触式光学测量仪两种；B Wafer roughness Measurement 粗糙度测量仪 主要为光学反射式粗糙度测量方式；4.Grinding 配套设备A Taping 贴膜机B Detaping 揭膜机C Wafer Mounter 贴膜机T Taping aping 需確認wafer是否有破片或污染或者有氣泡等等現象.特别是VOID；上膠膜後容易發生的defect为龟裂或破片；切割正面上膠上膠電腦偵測方向取出背面朝下D DetapingetapinglWafermountWafer frame晶晶 圓圓 切切 割割(Dicing)1.Dicing 设备介绍A DISCO 641/651 系列B ACCERTECH 东京精密200T/300TMain Sections IntroductionCutting Area:Spindles(Blade,Flange,Carbon Brush),Cutting Table,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoader Units:Spinner,Elevator,Cassette,Rotation ArmBlade Close-ViewBladeCutting WaterNozzleCooling Water NozzleTwin-Spindle StructureRearFrontX-axis speed:upto600mm/sCutting speed:upto80mm/sA Few ConceptsBBD(Blade Broken Detector)Cutter-set:Contact and OpticalPrecision InspectionUp-Cut and Down-CutCut-in and Cut-remain晶晶 圓圓 切切 割割(Dicing)2.Dicing 相关工艺A Die Chipping 芯片崩角B Die Corrosive 芯片腐蚀C Die Flying 芯片飞片Wmax,Wmin,Lmax,DDY,DY規格 DY0.008mmWmax0.070mmWmin0.8*刀厚Lmax1000,4 90/1004,8,11 80 o 8 o Organic Contamination vs Contact AngleWater DropChipChip塑封塑封(Molding)1.Molding设备介绍A TOWA Y1-SERIESB ASA ONEGA 3.8Towa Auto Mold Training机器上指示灯的说明：机器上指示灯的说明：1、绿灯机器处于正常工作状态；2、黄灯机器在自动运行过程中出现了报警提示，但机器不会立即停机；3、红灯机器在自动运行过程中出现了故障，会立即停机，需要马上处理。机器结构了解机器结构了解正面正面指示灯主机Tablet压机人机界面紧急停机按钮紧急停机按钮Towa Auto Mold Training机器结构了解机器结构了解背面背面CULLBOX用来装切下来的料饼；OUTMG用来装封装好的L/F；配电柜用来安装整个模机的电源和PLC，以及伺服电机的SERVOPACK。CULLBOXOUTMG配电柜紧急停机按钮紧急停机按钮Towa Auto Mold Training模具介绍：模具介绍：型腔注塑孔胶道模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严严禁使用钨钢笔、禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。等非铜材料硬质工具清洁模具。塑封塑封(Molding)2.Molding相关材料A Compound 塑封胶B Mold Chase 塑封模具塑封塑封(Molding)3.Molding辅助设备A X-RAY X 射线照射机B Plasma 清洗机Thanks for watching and listening结束结束
