MC2304BDS规格书.pdf
1These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on)and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers,PCMCIA cards,cellular and cordless telephones.N-Channel 30-V(D-S)MOSFETLow rDS(on)provides higher efficiency and extends battery lifeLow thermal impedance copper leadframeSOT-23 saves board spaceFast switching speedHigh performance trench technologyNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width limited by maximum junction temperatureSymbolMaximumUnitst=5 sec150Steady-State200THERMAL RESISTANCE RATINGSParameteroC/WMaximum Junction-to-AmbientaRTHJADSGVDS(V)rDS(on)()ID(A)0.085 VGS=10V2.50.125 VGS=4.5V1.730PRODUCT SUMMARYSymbolMaximumUnitsVDS30VGS20TA=25oC2.5TA=70oC2IDM10IS0.46ATA=25oC1.25TA=70oC0.8TJ,Tstg-55 to 150oCContinuous Source Current(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageContinuous Drain CurrentaIDAPower DissipationaPDOperating Junction and Storage Temperature RangeWSi 2304 B DS/MC2304 B DS F 2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxGate-Threshold VoltageVGS(th)VDS=VGS,ID=250 uA1.01.53Gate-Body LeakageIGSSVDS=0 V,VGS=8 V4100nAVDS=16 V,VGS=0 V71VDS=20 V,VGS=0 V,TJ=55oC10On-State Drain CurrentAID(on)VDS=5 V,VGS=4.5 V6AVGS=10 V,ID=2.5 A6285VGS=4.5 V,ID=1.7 A102125Forward TranconductanceAgfsVDS=5 V,ID=3.0 A3.5SDiode Forward VoltageVSDIS=0.46 A,VGS=0 V0.65VTotal Gate ChargeQg3.57Gate-Source ChargeQgs0.82Gate-Drain ChargeQgd1.02Input CapacitanceCiss7201500Output CapacitanceCoss165400Reverse Transfer CapacitanceCrss60200Turn-On Delay Timetd(on)1020Rise Timetr1330Turn-Off Delay Timetd(off)1430Fall-Timetf420VDS=15 V,VGS=0 V,f=1MHzpFUnitSPECIFICATIONS(TA=25oC UNLESS OTHERWISE NOTED)uAIDSSZero Gate Voltage Drain CurrentStaticVTest ConditionsSymbolParameterLimitsVDD=10 V,ID=1 A,RG=6,VGEN=4.5 VnsDrain-Source On-ResistanceADynamicbVDS=10 V,VGS=4.5 V,ID=2.5 AnCmrDS(on)FREESCALE reserves the right to make changes without further notic e to any products herein.freescale makes no warranty,representation or guarantee regarding the suitability of its products for any particular purpose,nor does freescale assume any liability arising ou t of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation special,consequential or incidental damages.“Typical”parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.All operating parameters,including“Typicals”must be validated for each customer application by customers technical experts.freescale does not convey any license under its patent rights nor the rights of others.freescale products are not designed,intended,or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life,or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.Should Buyer purchase or use freescale products for any such unintended or unauthorized application,Buyer shall indemnify and hold freescaleand its officers,employees,subsidiaries,affiliates,and distributors harmless against all claims,costs,damages,and expenses,and reasonable attorney fees arising out of,directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use,even if such claim alleges that freescale was negligent regarding the design or manufacture of the part.freescale is an Equal Opportunity/Affirmative Action Employer.F Si 2304 B DS/MC2304 B DS 3Typical Electrical CharacteristicsFigure 1.On-Region CharacteristicsFigure 2.On-Resistance Variation with Drain Current and Gate VoltageFigure 4.On-Resistance Variation withDrain Current and TemperatureFigure 3.On-Resistance Variationwith TemperatureFigure 6.Gate Threshold Variation with TemperatureFigure 5.Transfer CharacteristicsF Si 2304 B DS/MC2304 B DS 4Typical Electrical CharacteristicsNormalized Thermal Transient Impedance,Junction to Ambient Figure 8.Capacitance Characteristic Figure 7.Gate Charge Characteristic Figure 10.Breakdown Voltage Variation with Temperature Figure 9.Maximum Safe Operating Area F Si 2304 B DS/MC2304 B DS 5Package InformationF Si 2304 B DS/MC2304 B DS
