DTU60P04品牌授权规格书.pdf

1P-Channel 40-V(D-S)MOSFETFEATURESHalogen-free According to IEC 61249-2-21DefinitionTrenchFET Power MOSFET100%Rg and UIS TestedCompliant to RoHS Directive 2002/95/ECAPPLICATIONSPower SwitchLoad Switch in High Current ApplicationsDC/DC ConvertersPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)Qg(Typ.)-400.012 at VGS=-10 V-60d600.018 at VGS=-4.5 V-48dTO-252SGDSGDP-Channel MOSFETNotes:a.Duty cycle 1%.b.See SOA curve for voltage derating.c.When Mounted on 1 square PCB(FR-4 material).d.Package limited.ABSOLUTE MAXIMUM RATINGS TC=25 C,unless otherwise notedParameter SymbolLimitUnitDrain-Source Voltage VDS-40VGate-Source Voltage VGS 20Continuous Drain Current(TJ=150 C)TC=25 CID-60dATC=70 C-60dPulsed Drain CurrentIDM-100Avalanche CurrentIAS-46Single Avalanche EnergyaL=0.1 mHEAS106mJMaximum Power DissipationaTC=25 CPD73.5bWTA=25 Cc2.5Operating Junction and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RESISTANCE RATINGS Parameter SymbolLimitUnitJunction-to-Ambient(PCB Mount)cRthJA50C/WJunction-to-Case(Drain)RthJC1.7DTU60P042Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.c.Independent of operating temperature.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVDS=0 V,ID=-250 A-40VGate Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1-2.5Gate-Body LeakageIGSSVDS=0 V,VGS=20 V 250nAZero Gate Voltage Drain CurrentIDSSVDS=-40 V,VGS=0 V-1AVDS=-40 V,VGS=0 V,TJ=125 C-50VDS=-40 V,VGS=0 V,TJ=150 C-250On-State Drain CurrentaID(on)VDS -10 V,VGS=-10 V-50ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-22 A 0.0100.012VGS=-4.5 V,ID=-19 A0.0150.018Forward Transconductanceagfs VDS=-15 V,ID=-22 A 45SDynamicbInput CapacitanceCissVGS=0 V,VDS=-20 V,f=1 MHz 5380pFOutput CapacitanceCoss570Reverse Transfer CapacitanceCrss 500Total Gate ChargecQgVDS=-20 V,VGS=-10 V,ID=-20 A 106159nCVDS=-20 V,VGS=-4.5 V,ID=-20 A6090Gate-Source ChargecQgs 22Gate-Drain ChargecQgd 27Gate ResistanceRgf=1 MHz0.41.83.6Turn-On Delay Timectd(on)VDD=-20 V,RL=2 ID -10 A,VGEN=-10 V,Rg=1 1523nsRise Timectr1218Turn-Off Delay Timectd(off)70105Fall Timectf1827Drain-Source Body Diode Ratings and Characteristics TC=25 CbContinuous CurrentIS-60APulsed CurrentISM-100Forward VoltageaVSDIF=-10 A,VGS=0 V-0.8-1.5VReverse Recovery TimetrrIF=-10 A,dI/dt=100 A/s 3553nsPeak Reverse Recovery CurrentIRM(REC)-2-3AReverse Recovery ChargeQrr3350nCDTU60P043TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsTransfer Characteristics Transconductance0204060801000.00.51.01.52.02.5VGS=10 V thru 5 VVGS=3 VVGS=4 VVDS-Drain-to-Source Voltage(V)-Drain Current(A)ID024681001234TC=25 CTC=125 CTC=-55 CVGS-Gate-to-Source Voltage(V)-Drain Current(A)ID025507510001020304050TC=125 CTC=-55 CTC=25 C-Transconductance(S)gfsID-Drain Current(A)On-Resistance vs.Drain CurrentOn-Resistance vs.Gate-to-Source VoltageGate Charge0.0050.0100.0150.0200.025020406080100VGS=10 VVGS=4.5 V-On-Resistance()RDS(on)ID-Drain Current(A)0.0000.0060.0120.0180.0240.030246810TJ=25 CTJ=150 C-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)02468100306090120VDS=32 VID=20 AVDS=20 VVDS=10 V-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VGSDTU60P044TYPICAL CHARACTERISTICS 25 C,unless otherwise notedSource-Drain Diode Forward VoltageCapacitanceOn-Resistance vs.Junction Temperature0.11101000.00.30.60.91.2TJ=25 CTJ=150 CVSD-Source-to-Drain Voltage(V)-Source Current(A)IS02000400060008000010203040CissCossCrssVDS-Drain-to-Source Voltage(V)C-Capacitance(pF)-50-250255075100125150TJ-Junction Temperature(C)(Normalized)-On-ResistanceRDS(on)0.50.81.11.41.72.0ID=20 AVGS=4.5 VVGS=10 VThreshold VoltageDrain Source Breakdown vs.Junction TemperatureCurrent Derating-2.5-2.2-1.9-1.6-1.3-1.0-50-250255075100125150ID=250 A(V)VGS(th)TJ-Temperature(C)-51-49-47-45-43-50-250255075100125150ID=250 AVDS-Drain-to-Source Voltage(V)TJ-Junction Temperature(C)0204060800255075100125150Package LimitedTC-Case Temperature(C)ID-Drain Current(A)DTU60P045TYPICAL CHARACTERISTICS 25 C,unless otherwise notedSingle Pulse Avalanche Current Capability vs.TimeTime(s)(A)IDAV11010010-310-210-110-410-5TJ=25 CTJ=150 CSafe Operating Area0.010.111010010000.11101001 s,10 s,DCTC=25 CSingle PulseBVDSSLimitedLimited by RDS(on)*1 ms10 ms,100 ms100 AVDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specified-Drain Current(A)IDNormalized Thermal Transient Impedance,Junction-to-Case10-310-2001110-110-4100.20.1Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Duty Cycle=0.50.050.02Single PulseDTU60P041TO-252AA CASE OUTLINENoteDimension L3 is for reference only.L3DL4L5bb2e1E1D1CA1gage plane height(0.5 mm)eb3EC2ALHMILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A2.182.380.0860.094A1-0.127-0.005b0.640.880.0250.035b20.761.140.0300.045b34.955.460.1950.215C0.460.610.0180.024C20.460.890.0180.035D5.976.220.2350.245D15.21-0.205-E6.356.730.2500.265E14.32-0.170-H9.4010.410.3700.410e2.28 BSC0.090 BSCe14.56 BSC0.180 BSCL1.401.780.0550.070L30.891.270.0350.050L4-1.02-0.040L51.141.520.0450.060ECN:X12-0247-Rev.M,24-Dec-12DWG:5347Package Information1RECOMMENDED MINIMUM PADS FOR DPAK(TO-252)0.420(10.668)Recommended Minimum PadsDimensions in Inches/(mm)0.224(5.690)0.180(4.572)0.055(1.397)0.243(6.180)0.087(2.202)0.090(2.286)Application Note1DisclaimerALL PRODUCT,PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVERELIABILITY,FUNCTION OR DESIGN OR OTHERWISE.Din-Tek Intertechnology,Inc.,its 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