鼎日DTM9435规格书.pdf
1P-Channel 30-V(D-S)MOSFETFEATURESHalogen-free According to IEC 61249-2-21DefinitionTrenchFET Power MOSFETCompliant to RoHS Directive 2002/95/ECPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)-300.042 at VGS=-10 V-5.80.055 at VGS=-6 V-5.00.060 at VGS=-4.5 V-4.4SDSDSDGDSO-85678Top View2341SGDP-Channel MOSFETNotes:a.Surface Mounted on 1 x 1 FR4 board.ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise notedParameterSymbol 10 sSteady StateUnitDrain-Source Voltage VDS-30VGate-Source Voltage VGS 20Continuous Drain Current(TJ=150 C)aTA=25 CID-5.8-4.1ATA=70 C-4.6-3.2Pulsed Drain CurrentIDM-30Continuous Source Current(Diode Conduction)aIS-2.3-1.1Maximum Power DissipationaTA=25 CPD2.51.3WTA=70 C1.60.8Operating Junction and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RESISTANCE RATINGS ParameterSymbol TypicalMaximumUnitMaximum Junction-to-Ambientat 10 sRthJA4050C/WSteady State7095Maximum Junction-to-Foot(Drain)Steady StateRthJF2430 DTM94352Notes:a.Guaranteed by design,not subject to production testing.b.Pulse test;pulse width 300 s,duty cycle 2%.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.aMax.Unit StaticGate Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1.0-3.0VGate-Body LeakageIGSSVDS=0 V,VGS=20 V 100 nAZero Gate Voltage Drain CurrentIDSSVDS=-30 V,VGS=0 V-1AVDS=-30 V,VGS=0 V,TJ=70 C-5On-State Drain CurrentbID(on)VDS -10 V,VGS=-10 V-20AVDS -5 V,VGS=-4.5 V-5Drain-Source On-State ResistancebRDS(on)VGS=-10 V,ID=-5.8 A 0.0330.042VGS=-6 V,ID=-5 A 0.0430.055VGS=-4.5 V,ID=-4.4 A 0.0560.060Forward TransconductancebgfsVDS=-15 V,ID=-5.8 A 13SDiode Forward VoltagebVSDIS=-2.3 A,VGS=0 V-0.8-1.1VDynamicaTotal Gate ChargeQgVDS=-15 V,VGS=-10 V,ID=-3.5 A 1624nCGate-Source ChargeQgs 2.3Gate-Drain ChargeQgd 4.5Gate ResistanceRg8.8Turn-On Delay Timetd(on)VDD=-15 V,RL=15 ID -1 A,VGEN=-10 V,Rg=6 1425nsRise Timetr1425Turn-Off Delay Timetd(off)4270Fall Timetf3050Source-Drain Reverse Recovery TimetrrIF=-1.2 A,dI/dt=100 A/s3060 DTM94353TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsOn-Resistance vs.Drain CurrentGate Charge051015202530012345VGS=10 V thru 6 V VDS-Drain-to-Source Voltage(V)ID-Drain Current(A)3 V5 V4 VRDS(on)-On-Resistance()0.000.030.060.090.120.15048121620ID-Drain Current(A)VGS=6 VVGS=4.5 VVGS=10 V02468100.03.26.49.612.816.0VDS=15 VID=3.5 AVGS-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)Transfer CharacteristicsCapacitanceOn-Resistance vs.Junction Temperature051015202530012345TC=125 C-55 C25 C VGS-Gate-to-Source Voltage(V)ID-Drain Current(A)02204406608801100051015202530VDS-Drain-to-Source Voltage(V)Crss C-Capacitance(pF)CossCiss0.60.81.01.21.41.6-50-250255075100125150VGS=10 VID=5.7 ATJ-Junction Temperature(C)RDS(on)-On-Resistance(Normalized)DTM94354TYPICAL CHARACTERISTICS 25 C,unless otherwise notedSource-Drain Diode Forward VoltageThreshold Voltage0.00.20.40.60.81.01.2TJ=150 C501VSD-Source-to-Drain Voltage(V)IS-Source Current(A)10TJ=25 C-0.4-0.20.00.20.40.6-50-250255075100125150ID=250 AVariance(V)VGS(th)TJ-Temperature(C)On-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-Ambient0.000.040.080.120.160.200246810ID=5.8 ARDS(on)-On-Resistance()VGS-Gate-to-Source Voltage(V)0901503060Power(W)Time(s)12011010-110-210-3Safe Operating Area,Junction-to-Foot10010.11101000.0110100 ms0.1TC=25 CSingle Pulse1 s10 sDC10 ms1 msLimited by RDS(on)*VDS-Drain-to-Source Voltage(V)*VDS minimum VGS at which RDS(on)is specifiedID-Drain Current(A)DTM94355TYPICAL CHARACTERISTICS 25 C,unless otherwise notedNormalized Thermal Transient Impedance,Junction-to-Ambient10-310-211060010-110-4100210.10.010.20.10.050.02Single PulseDuty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance1.Duty Cycle,D=2.Per Unit Base=RthJA=70 C/W3.TJM-TA=PDMZthJA(t)t1t2t1t2Notes:4.Surface MountedPDMNormalized Thermal Transient Impedance,Junction-to-Foot10-310-211010-110-4210.10.010.20.10.050.02Single PulseDuty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance DTM94351DIMMILLIMETERSINCHESMinMaxMinMaxA1.351.750.0530.069A10.100.200.0040.008B0.350.510.0140.020C0.190.250.00750.010D4.805.000.1890.196E3.804.000.1500.157e1.27 BSC0.050 BSCH5.806.200.2280.244h0.250.500.0100.020L0.500.930.0200.037q0808S0.440.640.0180.026ECN:C-06527-Rev.I,11-Sep-06DWG:549843125687HEh x 45CAll Leadsq0.101 mm0.004LBA1AeD0.25 mm(Gage Plane)SOIC(NARROW):8-LEADJEDEC Part Number:MS-012SPackage Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-80.246(6.248)Recommended Minimum PadsDimensions in Inches/(mm)0.172(4.369)0.152(3.861)0.047(1.194)0.028(0.711)0.050(1.270)0.022(0.559)Return to IndexReturn to IndexApplication Note
