硅片行业术语大全中英文对照I-Z(共11页).doc

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1、精选优质文档-倾情为你奉上硅片行业术语大全(中英文对照 I-Z)Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。 Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer. 激光散射 - 由晶圆片表面缺陷引起的脉冲信号。 Lay - The main di

2、rection of surface texture on a wafer. 层 - 晶圆片表面结构的主要方向。 Light Point Defect (LPD) (Not preferred; see localized light-scatterer) 光点缺陷(LPD) （不推荐使用，参见“局部光散射”） Lithography - The process used to transfer patterns onto wafers. 光刻 - 从掩膜到圆片转移的过程。 Localized Light-Scatterer - One feature on the surface of a

3、wafer, such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。 Lot - Wafers of similar sizes and characteristics placed together in a shipment. 批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。 Majority Carrier - A carrier, either a hole or an elec

4、tron that is dominant in a specific region, such as electrons in an N-Type area. 多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。 Mechanical Test Wafer - A silicon wafer used for testing purposes. 机械测试晶圆片 - 用于测试的晶圆片。 Microroughness - Surface roughness with spacing between the impurities with a measuremen

5、t of less than 100 m. 微粗糙 - 小于100微米的表面粗糙部分。 Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。 Minimal Conditions or Dimensions - The allowable conditions for determining whether o

6、r not a wafer is considered acceptable. 最小条件或方向 - 确定晶圆片是否合格的允许条件。Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area. 少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。 Mound - A raised defect on the surface of a wafer mea

7、suring more than 0.25 mm. 堆垛 - 晶圆片表面超过0.25毫米的缺陷。 Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。 Orange Peel - A roughened surface that is visible to the unaided eye. 桔皮 - 可以用肉眼看到的粗糙表面 Orthogonal Misorientation - 直角定向误差 - Particle - A small piece of mat

8、erial found on a wafer that is not connected with it. 颗粒 - 晶圆片上的细小物质。 Particle Counting - Wafers that are used to test tools for particle contamination. 颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。 Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated lig

9、ht is shined on the wafer. 颗粒污染 - 晶圆片表面的颗粒。 Pit - A non-removable imperfection found on the surface of a wafer. 深坑 - 一种晶圆片表面无法消除的缺陷。 Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom. 点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。 Preferential Etch - 优先蚀刻 - Premium W

10、afer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer. 测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆

11、片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。 Primary Orientation Flat - The longest flat found on the wafer. 主定位边 - 晶圆片上最长的定位边。 Process Test Wafer - A wafer that can be used for processes as well as area cleanliness. 加工测试晶圆片 - 用于区域清洁过程中的晶圆片。 Profilometer - A tool that is used for measuring surface topography.

12、表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。 Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material. 电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。 Required - The minimum specifications needed by the customer when ordering wafers. 必需 - 订购晶圆片时客户必须达到的最小规格。Roughness - The texture

13、 found on the surface of the wafer that is spaced very closely together. 粗糙度 - 晶圆片表面间隙很小的纹理。 Saw Marks - Surface irregularities 锯痕 - 表面不规则。 Scan Direction - In the flatness calculation, the direction of the subsites. 扫描方向 - 平整度测量中，局部平面的方向。 Scanner Site Flatness - 局部平整度扫描仪 - Scratch - A mark that is

14、found on the wafer surface. 擦伤 - 晶圆片表面的痕迹。 Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer. 第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。 Shape - 形状 - Site - An area on the front surf

15、ace of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape) 局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。 Site Array - a neighboring set of sites 局部表面系列 - 一系列的相关局部表面。 Site Flatness - 局部平整 - Slip - A defect pattern of small ridges found on the surfa

16、ce of the wafer. 划伤 - 晶圆片表面上的小皱造成的缺陷。 Smudge - A defect or contamination found on the wafer caused by fingerprints. 污迹 - 晶圆片上指纹造成的缺陷或污染。 Sori - Striation - Defects or contaminations found in the shape of a helix. 条痕 - 螺纹上的缺陷或污染。 Subsite, of a Site - An area found within the site, also rectangular. T

17、he center of the subsite must be located within the original site. 局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。 Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface. 表面纹理 - 晶圆片实际面与参考面的差异情况。 Test Wafer - A silicon wafer that is used in manufacturing fo

18、r monitoring and testing purposes. 测试晶圆片 - 用于生产中监测和测试的晶圆片。 Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。 Top Silicon Film - The layer of silicon on which semiconductor devices are placed. Thi

19、s is located on top of the insulating layer. 顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。 Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer. 总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。 Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes. 原始测试晶圆片 - 还没有

20、用于生产或其他流程中的晶圆片。 Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding. 无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。 Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye. 波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。 Waviness - Widely spaced imperfections on t

21、he surface of a wafer. 波纹 - 晶圆片表面经常出现的缺陷。 Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor. 受主 - 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子 Alignment Preci

22、sion - Displacement of patterns that occurs during the photolithography process. 套准精度 - 在光刻工艺中转移图形的精度。 Anisotropic - A process of etching that has very little or no undercutting 各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。 Area Contamination - Any foreign particles or material that are found on the surface of a wafer

23、. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc. 沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。 Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse. 椭圆方位角 - 测量入射面和主晶轴之间的角度。 Backside - The bo

24、ttom surface of a silicon wafer. (Note: This term is not preferred; instead, use back surface.) 背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”） Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。

25、Bipolar - Transistors that are able to use both holes and electrons as charge carriers. 双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。 Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer. 绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。 Bonding Interface - The area wh

26、ere the bonding of two wafers occurs. 绑定面 - 两个晶圆片结合的接触区。 Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic. 埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。 Buried Oxide Layer (BOX) - The layer that insulates between the two wafers. 氧化埋层(BOX) - 在

27、两个晶圆片间的绝缘层。 Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer. 载流子 - 晶圆片中用来传导电流的空穴或电子。 Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical bu

28、ffing. It is used during the fabrication process. 化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。 Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand. 卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。 Cleavage Plane - A fracture plane that is

29、preferred. 解理面 - 破裂面 Crack - A mark found on a wafer that is greater than 0.25 mm in length. 裂纹 - 长度大于0.25毫米的晶圆片表面微痕。 Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually. 微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。 Conductivity (electrical) - A meas

30、urement of how easily charge carriers can flow throughout a material. 传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。 Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”. 导电类型 - 晶圆片中载流子的类型，N型和P型。 Contaminant, Particulate (see light point defect) 污染微粒 （参见光点缺陷） Contamination Ar

31、ea - An area that contains particles that can negatively affect the characteristics of a silicon wafer. 沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。 Contamination Particulate - Particles found on the surface of a silicon wafer. 沾污颗粒 - 晶圆片表面上的颗粒。 Crystal Defect - Parts of the crystal that contain vacancies and disl

32、ocations that can have an impact on a circuits electrical performance. 晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。 Crystal Indices (see Miller indices) 晶体指数 （参见米勒指数） Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers. 耗尽层 - 晶圆片上的电场区域，此区域排除载流子。 Dimple - A concav

33、e depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions. 表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。 Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”. 施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。 Dopant - An element that contribut

34、es an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements. 搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。 Doping - The process of the donation of an electron o

35、r hole to the conduction process by a dopant. 掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。 Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm. 芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。 Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies acco

36、rding to the dimensions of the wafer.) 边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。） Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer. 名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离。 Edge Profile - The edges of two bonded wafers that have been shaped either ch

37、emically or mechanically. 边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。 Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials. 蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。 Fixed Quality Area (FQA) - The area that is most central on a wafer surface. 质量保证区(FQA) - 晶圆片表面中央的大部分。 Flat - A section

38、 of the perimeter of a wafer that has been removed for wafer orientation purposes. 平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。 Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat) 平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。

39、Four-Point Probe - Test equipment used to test resistivity of wafers. 四探针 - 测量半导体晶片表面电阻的设备。 Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process. 炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。 Front Side - The top side of a

40、silicon wafer. (This term is not preferred; use front surface instead.) 正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。 Goniometer - An instrument used in measuring angles. 角度计 - 用来测量角度的设备。 Gradient, Resistivity (not preferred; see resistivity variation) 电阻梯度 （不推荐使用，参见“电阻变化”） Groove - A scratch that was not compl

41、etely polished out. 凹槽 - 没有被完全清除的擦伤。 Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes. 手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。 Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer. 雾度 - 晶圆片表面大量的缺陷，常常表现为

42、晶圆片表面呈雾状。 Hole - Similar to a positive charge, this is caused by the absence of a valence electron. 空穴 - 和正电荷类似，是由缺少价电子引起的。 Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。 Laser Light-Scattering Event - A signal pu

43、lse that locates surface imperfections on a wafer. 激光散射 - 由晶圆片表面缺陷引起的脉冲信号。 Lay - The main direction of surface texture on a wafer. 层 - 晶圆片表面结构的主要方向。 Light Point Defect (LPD) (Not preferred; see localized light-scatterer) 光点缺陷(LPD) （不推荐使用，参见“局部光散射”） Lithography - The process used to transfer patterns

44、 onto wafers. 光刻 - 从掩膜到圆片转移的过程。 Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。 Lot - Wafers of similar sizes and characteristics placed together in a shi

45、pment. 批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。 Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。 Mechanical Test Wafer - A silicon wafer used for testing purposes. 机械测试晶圆片 - 用于测试的晶

46、圆片。 Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 m. 微粗糙 - 小于100微米的表面粗糙部分。 Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统

47、的基本向量。 Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable. 最小条件或方向 - 确定晶圆片是否合格的允许条件。 Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area. 少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。 Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 堆垛 - 晶圆片表面超过0.25毫米的缺陷。 Notch - An indent on t