Fundamentals of RF and Microwave Transistor Amplifiers:射频和微波晶体管放大器的基本原理.pdf
《Fundamentals of RF and Microwave Transistor Amplifiers:射频和微波晶体管放大器的基本原理.pdf》由会员分享,可在线阅读,更多相关《Fundamentals of RF and Microwave Transistor Amplifiers:射频和微波晶体管放大器的基本原理.pdf(10页珍藏版)》请在淘文阁 - 分享文档赚钱的网站上搜索。
1、BrochureBrochure More information from http:/ Fundamentals of RF and Microwave Transistor Amplifiers Description:A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor AmplifiersThis book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noi
2、se,narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered includemodeling, analysis, design, packaging, and thermal and fabrication considerations.Through a unique integration of theory and practice, readers will learn to solve amplifier-related designproblems r
3、anging from matching networks to biasing and stability. More than 240 problems are included tohelp readers test their basic amplifier and circuit design skills-and more than half of the problems featurefully worked-out solutions.With an emphasis on theory, design, and everyday applications, this boo
4、k is geared toward students,teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF andmicrowave transistor amplifier circuit design.Contents:Foreword.Preface.Chapter 1: Introduction.1.1 Transistor Amplifier.1.2 Early History of Transistor Amplifiers.1.3
5、 Benefits of Transistor Amplifiers.1.4 Transistors.1.5 Design of Amplifiers.1.6 Amplifier Manufacturing Technologies.1.7 Applications of Amplifiers.1.8 Amplifier Cost.1.9 Current Trends.1.10 Book Organization.References.Chapter 2: Linear Network Analysis.2.1 Impedance Matrix.2.2 Admittance Matrix.2.
6、3 ABCD Parameters.2.4 S-Parameters.2.5 Relationships Between Various 2-Port Parameters.References.Problems.Chapter 3: Amplifier Characteristics and Definitions.3.1 Bandwidth.3.2 Power Gain.3.3 Input and Output VSWR.3.4 Output Power.3.5 Power Added Efficiency.3.6 Intermodulation Distortion.3.7 Harmon
7、ic Power.3.8 Peak-to-Average Ratio.3.9 Combiner Efficiency.3.10 Noise Characterization.3.11 Dynamic Range.3.12 Multi-Stage Amplifier Characteristics.3.13 Gate and Drain Pushing Factors.3.14 Amplifier Temperature Coefficient.3.15 Mean Time To Failure.References.Problems.Chapter 4: Transistors.4.1 Tra
8、nsistor Types.4.2 Si Bipolar Transistor.4.3 GaAs MESFET.4.4 Hetrojunction Field Effect Transistor.4.5 Hetrojunction BipolarTransistors.4.6 MOSFET.References.Problems.Chapter 5: Transistor Models.5.1 Transistor Model Types.5.2 MESFET Models.5.3 pHEMT Models.5.4 HBT Model.5.5 MOSFET Models.5.6 BJT Mod
9、els.5.7 Transistor Model Scaling.5.8 Source- and Load-Pull Data.5.9 Temperature Dependent Models.References.Problems.Chapter 6: Matching Network Components.6.1 Impedance Matching Elements.6.2 Transmission Lines Matching Elements.6.3 Lumped Elements.6.4 Bond Wire Inductors.6.5 Broadband Inductors.Ref
10、erences.Problems.Chapter 7: Impedance Matching Techniques.7.1 One-Port and Two-Port Networks.7.2 Narrowband Matching Techniques.7.3 Wideband Matching Techniques.References.Problems.Chapter 8: Amplifier Classes and Analyses.8.1 Classes of Amplifiers.8.2 Analysis of Class-A Amplifiers.8.3 Analysis of
11、Class-B Amplifiers.8.4 Analysis of Class-C Amplifiers.8.5 Analysis of Class-E Amplifiers.8.6 Analysis of Class-F Amplifiers.8.7 Comparison Between Various Amplifier Classes.References.Problems.Chapter 9: Amplifier Design Methods.9.1 Amplifier Design.9.2 Amplifier Design techniques.9.3 Matching Netwo
12、rks.9.4 Amplifier Design Examples.9.5 Silicon Based Handset Amplifier Design.References.Problems.Chapter 10: High-Efficiency Amplifier Techniques.10.1 High-Efficiency Design.10.2 Harmonic Reaction Amplifier.10.3 Harmonic Injection Technique.10.4 Harmonic Control Amplifier.10.5 High-PAE Design Consid
13、erations.References.Problems.Chapter 11: Broadband Amplifier Techniques.11.1 Transistor Bandwidth Limitations.11.2 Broadband Amplifier Techniques.11.3 Broadband Power Amplifier Design Considerations.References.Problems.Chapter 12: Linearization Techniques.12.1 Nonlinear Analysis.12.2 Phase Distortio
14、n.12.3 Linearization of Power Amplifiers.12.4 Efficiency Enhancement Techniques for Linear Amplifiers.12.5 Linear Amplifier Design Considerations.12.6 Linear Amplifier Design Examples.References.Problems.Chapter 13: High-Voltage Power Amplifier Design.13.1 Performance Overview of High-Voltage Transi
15、stors.13.2 High-Voltage Transistors.13.3 High-Power Amplifier Design Considerations.13.4 Power Amplifier Design Examples.13.5 Broadband HV Amplifiers.13.6 Series FET Amplifiers.References.Problems.Chapter 14: Hybrid Amplifiers.14.1 Hybrid Amplifier Technologies.14.2 Printed Circuit Boards.14.3 Hybri
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- Fundamentals of RF and Microwave Transistor Amplifiers:射频和微波晶体管放大器的基本原理 Amplifiers
链接地址:https://www.taowenge.com/p-34276543.html
限制150内