二输入与非门、或非门版图设计(12页).doc

《二输入与非门、或非门版图设计(12页).doc》由会员分享，可在线阅读，更多相关《二输入与非门、或非门版图设计(12页).doc（12页珍藏版）》请在淘文阁 - 分享文档赚钱的网站上搜索。

1、-课程名称Course集成电路设计技术项目名称Item二输入与非门、或非门版图设计与非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Researchs L-Edit V7.12 / Extract V4.00 ;* TDB File: E:cmosyufeimen, Cell: Cell0* Extract Definition File: C:Program FilesTanner EDAL-Editsprmorbn20.ext* Extract Date and Time: 05/25/2011 - 10:03.include H:ml

2、2_125.mdVPower VDD GND 5va A GND PULSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* * * * * * * WARNING: Layers with Unassigned FRINGE Capacitance.* * * * * * * * * WARNING: Layers with Zero Re

3、sistance.* * * * * NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6.5)* 4 = F (42.5,6.5)* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u * M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5) M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u * M2 DRAI

4、N GATE SOURCE BULK (39.5 14.5 41.5 23.5) M3 F B 5 GND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5) M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5) * Total Nodes: 6* Total Elements: 4*

5、Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Researchs L-Edit V7.12 / Extract V4.00 ;* TDB File: E:cmosyufeimen, Cell: Cell0* Extract Definition File: C:Program FilesTanner EDAL-Editsprmorbn20.ext* Extract Date and Time: 05/25/2011 - 10:03.include H:

6、ml2_125.mdVPower VDD GND 5va A GND 5vb B GND 5.dc va 0 5 0.02 vb 0 5 0.02.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* * * * * * * WARNING: Layers with Unassigned FRINGE Capacitance.* * * * * * * * * WARNING: Layers with Zero Resistance.* * * * * NODE NAME ALIASES* 1 = VDD (34,3

7、7)* 2 = A (29.5,6.5)* 3 = B (55.5,6.5)* 4 = F (42.5,6.5)* 6 = GND (25,-22)M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u * M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5) M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u * M2 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5) M3 F B 5 G

8、ND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5) M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5) * Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END与非门电路仿真波形图（直流分析）

9、：或非门电路的版图：.spc文件（瞬时分析）：* Circuit Extracted by Tanner Researchs L-Edit V7.12 / Extract V4.00 ;* TDB File: E:cmoshuofeimen, Cell: Cell0* Extract Definition File: C:Program FilesTanner EDAL-Editsprmorbn20.ext* Extract Date and Time: 05/25/2011 - 10:04.include H:CMOSml2_125.mdVPower VDD GND 5va A GND PU

10、LSE (0 5 0 5n 5n 100n 200n)vb B GND PULSE (0 5 0 5n 5n 50n 100n).tran 1n 400n.print tran v(A) v(B) v(F)* WARNING: Layers with Unassigned AREA Capacitance.* * * * * * * WARNING: Layers with Unassigned FRINGE Capacitance.* * * * * * * * * WARNING: Layers with Zero Resistance.* * * * * NODE NAME ALIASE

11、S* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B (55.5,6)* 4 = F (42.5,6.5)* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=49.5p PS=29u * M1 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5) M2 F B 6 VDD PMOS L=2u W=9u AD=49.5p PD=29u AS=54p PS=30u * M2 DRAIN GATE SOURCE BULK (47.5 14.5 49.5

12、23.5) M3 F A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=104.5p PS=60u * M3 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5) M4 GND B F GND NMOS L=2u W=9.5u AD=104.5p PD=60u AS=57p PS=31u * M4 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5) * Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.E

13、ND或非门电路仿真波形图（瞬时分析）：.spc文件（直流分析）：* Circuit Extracted by Tanner Researchs L-Edit V7.12 / Extract V4.00 ;* TDB File: E:cmoshuofeimen, Cell: Cell0* Extract Definition File: C:Program FilesTanner EDAL-Editsprmorbn20.ext* Extract Date and Time: 05/25/2011 - 10:04.include H:CMOSml2_125.mdVPower VDD GND 5va

14、 A GND 5vb B GND 5.dc va 0 5 0.02 vb 0 5 0.02.print dc v(F)* WARNING: Layers with Unassigned AREA Capacitance.* * * * * * * WARNING: Layers with Unassigned FRINGE Capacitance.* * * * * * * * * WARNING: Layers with Zero Resistance.* * * * * NODE NAME ALIASES* 1 = VDD (34,37)* 2 = A (29.5,6.5)* 3 = B

15、(55.5,6)* 4 = F (42.5,6.5)* 5 = GND (25,-22)M1 6 A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=49.5p PS=29u * M1 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5) M2 F B 6 VDD PMOS L=2u W=9u AD=49.5p PD=29u AS=54p PS=30u * M2 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5) M3 F A GND GND NMOS L=2u W=9.5u AD=57p

16、 PD=31u AS=104.5p PS=60u * M3 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5) M4 GND B F GND NMOS L=2u W=9.5u AD=104.5p PD=60u AS=57p PS=31u * M4 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5) * Total Nodes: 6* Total Elements: 4* Extract Elapsed Time: 0 seconds.END或非门电路仿真波形图（直流分析）：课程名称Course集成电路设计技术项目名称Ite

17、m二输入与非门、或非门版图设计目的Objective1. 掌握利用E-EDIT进行IC设计方法，设计二输入与非门版图并仿真2. 掌握利用L-EDIT进行IC设计方法，设计二输入或非门版图并仿真3. 领会并掌握版图设计最优化实现方法。内容（方法、步骤、要求或考核标准及所需工具、设备等）一、 实训设备与工具1 PVI计算机一台；2 Tanner Pro集成电路设计软件二、 实训方法、步骤与要求1 二输入与非门电路的线路结构 2 二输入或非门电路的线路结构3 CMOS倒相器电路的版图4 根据与非门、或非门线路结构，在一个工程中，重新新建两个新CELL，分别对应与非门和或非门版图，并设计与非门、或非版

18、图结构。1） 按照最佳噪声容限合理设计与非门、或非门单元电路中的N管和P管的尺寸；2） 版图结构最简单，版图尺寸最小；（高度均为70um）3） 加入正确的电路端口，并在抽取的网表中存在A、B和F；4） 版图设计规则检查（DRC）无错误5 熟记基本、重要的版图设计规则6 进行CMOS与非门、或非门版图网表抽取，加入仿真命令，进行瞬时和直流分析 Tool Extract General选项 Extract Definition File: C:Program FilesTanner EDAL-Editsprmorbn20.ext Spice Extract Output File: d:desig

19、nnand2.spc Output选项 Comment: Write Node name Names Write Verbose Spice Statement Spice Include Statement . Include c:tannermodelsml2_125.md插入相应的仿真命令，则可进行二输入与非门、或非门的瞬时或直流仿真7合理设计三输入与或非门、或与非门的N管和P管尺寸与版图结构。8合理设计三输入与或非门、或与非门的N管和P管尺寸与版图结构。三、注意事项：1）如果对版图设计的基本规则不熟悉，可以在L-EDIT中，打开SETUP DRC，列出了所有的设计规则，可学习和记忆其中的一些主要和常用的版图设计规则2）在进行版图设计规则检查时，应选择输出检查文件一项，版图设计中出现的所有错误，都可以在该输出文件中列出，并标明出错的原因，与哪条规则相违背，可打开规则进行对照，并在版图上进行相应的修改。-第 12 页