MOSFET Models for SPICE Simulation. Including BSIM3v3 and BSIM4.pdf

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1、BrochureBrochure More information from http:/ Models for SPICE Simulation.Including BSIM3v3 and BSIM4 Description:An expert guide to understanding and making optimum use of BSIMUsed by more chip designers worldwide than any other comparable model,the Berkeley ShortChannelIGFET Model(BSIM)has,over th

2、e past few years,established itself as the de facto standard MOSFET SPICEmodel for circuit simulation and CMOS technology development.Yet,until now,there have been noindependent expert guides or tutorials to supplement the various BSIM manuals currently available.Writtenby a noted expert in the fiel

3、d,this book fills that gap in the literature by providing a comprehensive guide tounderstanding and making optimal use of BSIM3 and BSIM4.Drawing upon his extensive experience designing with BSIM,William Liu provides a brief history of themodel,discusses the various advantages of BSIM over other mod

4、els,and explores the reasons why BSIM3has been adopted by the majority of circuit manufacturers.He then provides engineers with the detailedpractical information and guidance they need to master all of BSIMs features.He:-Summarizes key BSIM3 components-Represents the BSIM3 model with equivalent circ

5、uits for various operating conditions-Provides a comprehensive glossary of modeling terminology-Lists alphabetically BSIM3 parameters along with their meanings and relevant equations-Explores BSIM3s flaws and provides improvement suggestions-Describes all of BSIM4s improvements and new features-Prov

6、ides useful SPICE files,which are available online at the Wiley ftp siteContents:Preface.1 Modeling Jargons.1.1 SPICE Simulator and SPICE Model.1.2 Numerical Iteration and Convergence.1.3 Digital vs.Analog Models.1.4 Smoothing Function and Single Equation.1.5 Chain Rule.1.6 QuasiStatic Approximation

7、.1.7 Terminal Charges and Charge Partition.1.8 Charge Conservation.1.9 NonQuasiStatic and QuasiStatic yParameters.1.10 SourceReferencing and Inverse Modeling.1.11 Physical Model and TableLookup Model.1.12 Scalable Model and Device Binning.References and Notes.2 Basic Facts About BSIM3.2.1 What Is an

8、d Whats Not Implemented in BSIM3.2.2 DC Equivalent Circuit Model.2.3 BSIM3s Parameters.2.4 LargeSignal Equivalent Circuit.2.5 SmallSignal Model.2.6 Noise Equivalent Circuit.2.7 Special Operating Conditions:VDS 0,VGS 0.References and Notes.3 BSIM3 Parameters.3.1 List of Parameters According to Functi

9、on.3.2 Alphabetical Glossary of BSIM3 Parameters.3.3 Flow Diagram of SPICE Simulation.References and Notes.4 Improvable Areas of BSIM3.4.1 Lack of Robust NonQuasiStatic Models:Transient Analysis.4.2 Problem with the 40/60 Partition:The Killer NOR Gate.4.3 Lack of Channel Resistance(NQS Effect;SmallS

10、ignal Analysis).4.4 Incorrect Transconductance Dependency on Frequency.4.5 Lack of Gate Resistance(and Associated Noise).4.6 Lack of Substrate Distributed Resistance(and Associated Noise).4.7 Incorrect Source/Drain Asymmetry at VDS=0.4.8 Incorrect Cgb Behaviors.4.9 Capacitances with Wrong Signs.4.10

11、 Cgg Fit and Other Capacitance Issues.4.11 Insufficient Noise Modeling(No Excess ShortChannel Thermal Noise).4.12 Insufficient Noise Modeling(No ChannelInduced Gate Noise).4.13 Incorrect Noise Figure Behavior.4.14 Inconsistent InputReferred Noise Behavior.4.15 Possible Negative Transconductances.4.1

12、6 Lack of GIDL(GateInduced Drain Leakage)Current.4.17 Incorrect Subthreshold Behaviors.4.18 Threshold Voltage Rollup.4.19 Problems Associated with a Nonzero RDSW.4.20 Other Nuisances.References and Notes.5.Improvements in BSIM4.5.1 Introduction.5.2 Physical and Electrical Oxide Thicknesses.5.3 Stron

13、g Inversion Potential for Vertical Nonuniform Doping Profile.5.4 Threshold Voltage Modifications.5.5 VGST in Moderate Inversion.5.6 Drain Conductance Model.5.7 Mobility Model.5.8 Diode Capacitance.5.9 Diode Breakdown.5.10 GIDL(GateInduced Drain Leakage)Current.5.11 BiasDependent DrainSource Resistan

14、ce.5.12 Gate Resistance.5.13 Substrate Resistance.5.14 Overlap Capacitance.5.15 Thermal Noise Models.5.16 Flicker Noise Model.5.17 NonQuasiStatic AC Model.5.18 Gate Tunneling Currents.5.19 LayoutDependent Parasitics.References and Notes.Appendixes.A BSIM3 Equations.B Capacitances and Charges for All

15、 Bias Conditions.C NonQuasiStatic Parameters.D Fringing Capacitance.E BSIM3 NonQuasiStatic Modeling.F Noise Figure.G BSIM4 Equations.Index.Ordering:Order Online-http:/ by Fax-using the form belowOrder by Post-print the order form below and send to Research and Markets,Guinness Centre,Taylors Lane,Du

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