堆叠栅介质MOS器件栅极漏电流的计算模型.pdf
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1、堆叠栅介质 MOS 器件栅极漏电流的计算模型第六图书馆采用顺序隧穿理论和传输哈密顿方法并考虑沟道表面量子化效应,建立了高介电常数堆叠栅介质MOS 器件栅极漏电流的顺序隧穿模型。利用该模型数值,研究了Si2N4/SiO2、Al2O3/SiO2、HfO2/SiO2和La2O3/SiO2四种堆叠栅介质结构 MOS 器件的栅极漏电流随栅极电压和等效氧化层厚度变化的关系。依据计算结果,讨论了堆叠栅介质 MOS 器件按比例缩小的前景。采用顺序隧穿理论和传输哈密顿方法并考虑沟道表面量子化效应,建立了高介电常数堆叠栅介质MOS 器件栅极漏电流的顺序隧穿模型。利用该模型数值,研究了Si2N4/SiO2、Al2O
2、3/SiO2、HfO2/SiO2和La2O3/SiO2四种堆叠栅介质结构 MOS 器件的栅极漏电流随栅极电压和等效氧化层厚度变化的关系。依据计算结果,讨论了堆叠栅介质 MOS 器件按比例缩小的前景。直接隧穿 顺序隧穿 高介电常数栅介质 MOS器件微电子学杨红官 朱家俊 喻彪 戴大康 曾云湖南大学物理与微电子科学学院,长沙4100822007 第六图书馆第六图书馆http:/ 第六图书馆第六图书馆文档编码:CD4G8S4B9H10 HK5J3U2Q4G8 ZS1V7X8K10W8文档编码:CD4G8S4B9H10 HK5J3U2Q4G8 ZS1V7X8K10W8文档编码:CD4G8S4B9H10
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