ESD培训手册.ppt

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1、 Towards Zero Defect Caused by ESD Part I Basic ESD Knowledge 第1部分ESD 基础知识 2 Rev.1.0 Confidential ESD 培训手册 2021/9/261 Towards Zero Defect Caused by ESD What is Electrostatic Discharge(ESD)?A sudden transfer of charge between bodies at different electrostatic potentials.Some examples of ESD are:1.Lig

2、htning 2.The“shock”you sometimes feel during winter when you walk across the carpet and touch the door knob 3.The cracking and sparks when you remove clothes from your dryer ESD seems harmless,but it can damage electronic components and assemblies 3 Rev.1.0 Confidential ESD 介绍 2021/9/262Towards Zero

3、 Defect Caused by ESD 什么是静电放电Electrostatic Discharge(ESD)?不同电势物体之间静电荷的瞬间快速转移。ESD 实例：1.闪电 2.在冬天当你走过地毯，接触门把手时可以感觉到“电击”3.当脱毛衣时可以看到的电火花。ESD 看上去是无害的，但它可以损坏电子器件和部件。4 Rev.1.0 Confidential ESD 介绍 2021/9/263Towards Zero Defect Caused by ESD Two main ways in which charges can be built up:产生电荷的两种主要途径：1)By Cont

4、act&Separation of Materials(Triboelectric charging)接触和分离材料（摩擦产生电荷）2)By Induction 感应 5 Rev.1.0 Confidential ESD 介绍 2021/9/264 Towards Zero Defect Caused by ESD Step over of electrons 电子的转移步骤 Remaining charge 剩余电荷 6 Rev.1.0 Confidential 摩擦产生电荷 2021/9/265Towards Zero Defect Caused by ESD *Triboeletric

5、Charging means charge generation by contact and separation of two objects due to a difference in work function 摩擦产生电荷指由接触和分离两个不同物体而得到的电荷。*Factors influencing the magnitude and polarity of charging:影响电势大小和极性的因素：-surface energy states 表面能量状态 -roughness of surface 表面粗糙度 -contact pressure 接触压力 -speed of

6、 separation 分离速度 -surface conductivity(resistance)表面导电性（阻抗）-relative humidity 相对湿度 7 Rev.1.0 Confidential 摩擦产生电荷 2021/9/266 Towards Zero Defect Caused by ESD Event 实例 Relative Hunidity 10-20%65-95%Walking across a carpet 35000 1500 在地毯上行走 Walking across a vinyl floor 12000 250 在塑料地板上行走 Motions of be

7、nch employee 6000 100 在椅子上工作 Picking up plastic paper file 7000 600 拿塑料文件夹 Picking up plastic bag 20000 1000 拿塑料袋 Working chair friction 18000 1500 拖动椅子 8 Rev.1.0 Confidential 典型静电电压/V 2021/9/267 Towards Zero Defect Caused by ESD Charging by Induction 感应产生电荷 Charging Separation in a neutral object 正

8、负电荷在一个中性物体中分离 Charge flow during contact to ground 当接触地时产生放电 Remaining charge after separation 离开地后留存电荷 Remaining charge after removing the Charged jamming object 在移开带电干扰物体后留存电荷 9 Rev.1.0 Confidential 感应产生电荷 2021/9/268Towards Zero Defect Caused by ESD *Catastrophic 破坏性的 -Parts are completely destroy

9、ed as a result of an ESD incident.The failure is most often discovered and required before the instruments is shipped out to customer.器件在一次ESD事件中被完全破坏。这种失效大多可以 在送达客户前的检验中发现。*Latent(Degradation)潜在的（性能衰退）-This type of damage occurs when an ESD only weakens the components.It may pass initial testing bu

10、t fail in the field OR fail prematurely.这种ESD损坏的发生仅仅削弱了性能。它可以通过最初的 电性能测试但会过早的在使用中失效。10 Rev.1.0 Confidential 典型的ESD损伤 2021/9/269Towards Zero Defect Caused by ESD Analysis of non-conforming or defective devices showed that 60-75%were damaged by EOS (electrical overstress)or ESD.This rises to 90%for ne

11、wer technologies.About 70%of these failures were attributed to damage from Incorrectly grounded people.在对不良或有缺陷器件的分析显示，其中60-75%的 损坏来自于ESD和EOS。在技术不断发展的今天已上 升至90%。其中70%的失效源自没有正确接地的操作 者。Toshikazu Namaguchi,Hideka Uchida.EOS/ESD Symposium EOS-20 1998 pp 245-251 11 Rev.1.0 Confidential ESD 损伤 2021/9/2610

12、 Towards Zero Defect Caused by ESD Gate Oxide damage under Polysilicon 多晶硅层下 的栅氧化层 损伤 12 Rev.1.0 Confidential ESD 失效实例 2021/9/2611 Towards Zero Defect Caused by ESD Human Body Model(HBM)人体模式 Machine Model(MM)机器模式 Charged Device Model 充电器件模式 14 Rev.1.0 Confidential ESD 模式 2021/9/2612Towards Zero Defe

13、ct Caused by ESD Human Body Model(HBM)人体模式 *When a charged individual touches a device,some of the stored energy is transferred or discharged either to the device or through the device to ground.当一个带有电荷的个体接触器件时，其储存的强大的能量就会 转移或放电至这个器件，或经过这个器件放电至地。*It is possible to develop human body potentials that

14、far exceed damage ratings of the device 人体产生的静电电压远超过器件的承受力是完全有可能的.15 Rev.1.0 Confidential HBM 模式 2021/9/2613 Towards Zero Defect Caused by ESD 个体放电（未接地）攻击在工作台表面上 的器件（放电从手指-引脚-器件-模块）16 Rev.1.0 Confidential HBM 模式 2021/9/2614 Towards Zero Defect Caused by ESD 人体模式（HBM）测试回路 17 Rev.1.0 Confidential HBM

15、模式2021/9/2615Towards Zero Defect Caused by ESD 机器模式（HBM）测试回路 19 Rev.1.0 Confidential MM 模式 2021/9/2616 Towards Zero Defect Caused by ESD Charged Device Model(CDM)充电器件模式（CDM）*Electrostatic charges get stored up on areas of plastic devices,e.g.leadframe and metal parts of die 静电电荷存储在塑封器件内。如引线框架和芯片的金属部

16、件 *Charges quickly discharge to an effective ground through a low impedance path and cause ESD damage 静电电荷通过一个低阻抗到地迅速放电,造成ESD损伤 *The electrostatic energy stored in the charged device depends on its capacitance which is found to be a function of its orientation with respect to ground.A device close t

17、o ground plane will have large capacitance than that far from the ground plane 充电器件存储的静电能量取决于其电容。而其电容大小和充电器件 与地面方向性相关.与地面接近的器件会有比远离地面的器件更大 的静电电容 21 Rev.1.0 Confidential CDM 模式 2021/9/2617 Towards Zero Defect Caused by ESD 典型的CDM放电事件 金属表面 CDM=充电+快速放电 22 Rev.1.0 Confidential CDM 模式 2021/9/2618 CDM 测试设

18、置 有效的接地 接地平面 23 Rev.1.0 Confidential CDM 模式 Towards Zero Defect Caused by ESD 2021/9/2619 Towards Zero Defect Caused by ESD The low ohmic discharge of a charged device(CDevice)e.g.charged by sliding in a production line is described by the Charged Device Model(CDM).The CDM failure is one of the main

19、 failure mechanisms in automatic production lines.带电器件的低阻值放电-如在生产线上的滑动充电可以认为是CDM。充电器件模式失效是一种在自动生产线 上主要的失效机制。24 Rev.1.0 Confidential CDM 模式 2021/9/2620Towards Zero Defect Caused by ESD 实时ESD图谱 脉冲宽度 Real ESD Spectrum ESD Models Pulse Width s 10-9 10-8 10-7 CDM MM HBM 10-11 10-10 10-9 10-8 Rise Time s

20、上升时间 26 Rev.1.0 Confidential 使用中的ESD模式和ESD引力 2021/9/2621Towards Zero Defect Caused by ESD *MIL STD 883 D,method 3015.7,1989 *ANSI EOD/ESD S5.1 1993(ESD Association)（ESD协会）*JESD22-A114-B 2000 (JEDEC)Further Standards:EIAJ Japan 更多的标准 CECC Europe Company Standards product standards(chip cards:ISO/IEC1

21、0373)27 Rev.1.0 Confidential HBM 标准 2021/9/2622Towards Zero Defect Caused by ESD Damage caused by invisible and undetectable events can be by comparing ESD damage to medical contamination of human body by virus or bacteria.Although viruses and bacteria are invisible,they can cause severe damage even

22、 before you can detect their presence.A defense against this invisible threat is sterilization.ESD损伤是无形的和无法发觉的事件，类似于人体来自于病 毒和细菌的医学污染。尽管病毒和细菌是无形的，他们也 能在你察觉它们的到来前造成多种损伤。杀菌是一种抵制 无形威胁的防护。30 Rev.1.0 Confidential 静电沾污的随想 2021/9/2623 Towards Zero Defect Caused by ESD *JESD22-A115-A 1997 under revision (JED

23、EC)*ANSI EOD/ESD S5.2-1999 *Automotive Electronics Council -AEC-Q100-003-REV-E 28 Rev.1.0 Confidential MM 标准 2021/9/2624Towards Zero Defect Caused by ESD Summary for Part 1 第一部分的小结 1.Charges are generated by 2 ways:电荷积累产生于2种途径：a)Triboeletric Charging 摩擦产生电荷 b)Induction 感应 2.Type of Damages caused by

24、 ESD:ESD损伤类型：a)Catastrophic 完全的损坏 b)Latent(Degradation)潜在的损坏（性能下降）3.The 3 ESD Models are:3种ESD模式 a)HBM 人体模式 b)MM 机器模式 c)CDM 充电器件模式 4.Static can be considered as a contamination problem 静电可以认为是一种沾污问题。31 Rev.1.0 Confidential ESD基本知识 2021/9/2625Towards Zero Defect Caused by ESD Part II Concept of ESD C

25、ontrol 第二部分 ESD控制的概念 32 Rev.1.0 Confidential ESD 控制 2021/9/2626Towards Zero Defect Caused by ESD Majority of products are designed to serve 3 functions 大多数ESD控制产品被设计成可提供以下3种功能 1)Grounding 接地 2)Isolation 隔离 3)Neutralization 中和 33 Rev.1.0 Confidential ESD 控制的基本概念 2021/9/2627Towards Zero Defect Caused

26、by ESD How can we protect ESD sensitivity device(ESDS)?我们该如何保护ESD敏感器件（ESDS）？1)Minimizing charge generation 最小化电荷的产生 2)Keeping the area at equal potential 使区域处于等电势 3)Neutralizing charge 中和电荷 34 Rev.1.0 Confidential ESD 的控制 2021/9/2628Towards Zero Defect Caused by ESD How to achieve this?如何实现？1)Minimi

27、zing charge generation 最小化电荷的产生 *Choose materials that generate little or no charge 选择低产生或不产生静电荷的材料 *Avoid sliding&rubbing actions 避免滑行和摩擦 2)Keeping the area at equal potential使区域处于等电势 *Use materials which will dissipate electrostatic charge when connected to earth 使用当接地后可以消散静电的材料 *Directly or indir

28、ectly,connect all surfaces,people and objects together 直接或间接连接所有表面，包括人和物品。35 Rev.1.0 Confidential ESD 的控制 2021/9/2629Towards Zero Defect Caused by ESD 3)Minimize Field Effects 最小化场效应 *Allow no unmodified plastics in the area 在区域中没有未被更改的塑料 *Keep non-conductors&insulators away from working area 保持在工作区

29、域内没有不导电物和绝缘物 4)Neutralizing charges中和电荷 *Use Air Ionisers 使用离子风机 36 Rev.1.0 Confidential ESD 的控制 2021/9/2630 Towards Zero Defect Caused by ESD Grounding Devices 接地部件 Isolation 隔离 *Shielding bags 屏蔽袋 *Wrist-strip 腕带 *Conductive containers w/*Footstrap&Shoes 脚部接地带和鞋 covers 有盖的导电容器 *Worksurfaces 桌垫 *Re

30、stricted entry to EPA *Chairs 椅子 控制进入EPA *Floors 地板 *Garments 防静电工作服 Neutralization 中和 *Bench Top Ioniser *Overhead Ioniser *Ionising Air Gun 离子枪 *Complete Room Ionization 37 Rev.1.0 Confidential ESD 的控制 2021/9/2631Towards Zero Defect Caused by ESD What is an ESD Protected Area(EPA)?什么是ESD防护区域（EPA）？

31、An EPA is an area in which electrostatic sensitive devices can be handled outside their protective packaging with minimum risk of damage from Electro-Static Discharge or Electric Fields.It is constructed to create an environment in which everything is at the same electrical potential.ESD防护区域(EPA)是静电

32、敏感器件可以离开他们的保护包 装被操作的区域，在ESD防护区域中静电放电或电场损坏风 险被减到最小。EPA创建了一个环境使每一样物品等电势。38 Rev.1.0 Confidential ESD 的控制 2021/9/2632Towards Zero Defect Caused by ESD Surface Resistivity 表面阻抗 Static Dissipative Insulative 绝缘区 Conductive 导电区 静态消散区 0 105 108 1012 1020 Note:1)Materials with surface resistivity to and belo

33、w are suitable for ESD Shielding 1 9 表面阻抗在10 至10 和以下的材料适合于ESD防护 2)Materials with surface resistivity and below are suitable for EMI/RFI Shielding 1 表面阻抗在10 和以下的材料适合于EMI/RFI防护 40 Rev.1.0 Confidential ESD 的控制 2021/9/2633 Towards Zero Defect Caused by ESD Static Safe Work Stations 静电安全工作配置 Static safe

34、work station is an area that has been established to effectively control ESD.A static safe work station will include equipment to perform the three critical functions Grounding,Isolation and Neutralization.静电安全工作配置是一个被定义为有效控制ESD的区域。它 包括的设备须提供3种重要功能接地，隔离，和中和。41 Rev.1.0 Confidential ESD 的控制2021/9/2634

35、Towards Zero Defect Caused by ESD Protective Measures 防护措施 Handling 操作 -Protective Garments 防护工作服 -Footwear Testing 工作鞋测试 -Wrist Strap Testing 腕带测试 -Packing 包装 43 Rev.1.0 Confidential ESD 的控制 2021/9/2635 Towards Zero Defect Caused by ESD Protective Garments 防护工作服 Normal garments can generate dangero

36、us high voltages 常规的服装可以产 生危险的高压 常规的鞋不能消散 人体的电荷 Normal shoes are not able to drain off charge from human bodies!44 Rev.1.0 Confidential ESD 的控制 2021/9/2636Towards Zero Defect Caused by ESD Protective Garments防护工作服 特制的工作服在适 当扣紧的前提下同 Special garments do 时补偿了常规服装 not show dangerous 产生的电场 voltage Specia

37、l garments also 特制的工作服不会 compensate the field 产生危险的高压 generated by the normal clothes if they are properly fastened!导静电的工作鞋可 以消除走动时的电 导静电的工作鞋可 荷积累 控的导走人体积累 的电荷 Dissipative footwear Dissipative footwear drains avoids charging by off charge on human bodies walking!in a controlled way 45 Rev.1.0 Confid

38、ential ESD 的控制 2021/9/2637Towards Zero Defect Caused by ESD Footwear Testing工作鞋测试 Test your footwear every day!请每天测试工作鞋！测试工作鞋时请站立 于金属板上，并逐脚 测试 Test your footwear one by one by standing on a metal plate 46 Rev.1.0 Confidential ESD 的控制 2021/9/2638Towards Zero Defect Caused by ESD Wrist Strap Testing腕带

39、测试 Use a wrist strap for 请每天测试个人 grounding in order not 的腕带 to be charged Test your personal wrist 使用腕带 strap every day!是为了接 地，没有 电荷积累 47 Rev.1.0 Confidential ESD 的控制 2021/9/2639Towards Zero Defect Caused by ESD 在ESD防护区域外除去所有外部包 除去绝缘封条必须是割开而 装直至看到ESD警告标志 Packing 包装 不是撕扯开 Some seals made of insulated

40、 Remove all outer packing material therefore seals shall be outside the EPA until you see an ESD warning label!cut and not stripped!Inside the EPA,only released and labelled packing is allowed!只有在ESD防护区域打开和标识包 装是被允许的 48 Rev.1.0 Confidential ESD 的控制 2021/9/2640Towards Zero Defect Caused by ESD Packin

41、g 包装 Use dissipative material only as filling material!(Do not use styrofoam chips!)使用导静电材料填充 （禁止使用聚苯乙烯泡沫塑料）49 Rev.1.0 Confidential ESD 的控制 2021/9/2641Towards Zero Defect Caused by ESD Packing 包装 ESDS shall only be handled by trained(and equipped)personnel at special working Wrist Strip places!Dissi

42、pative ESDS必须在特 work surface 定的工作区域 内被培训过 导静电的桌面 （已装备）的 人员操作 50 Rev.1.0 Confidential ESD 的控制 2021/9/2642Towards Zero Defect Caused by ESD Packing 包装 Avoid a“hard”discharge 避免“硬”放电 Metallic surface金属表面 51 Rev.1.0 Confidential ESD 的控制 2021/9/2643Towards Zero Defect Caused by ESD Packing 包装 Unpack the

43、devices and place them on dissipative material to drain off possible charge on the devices“softly”倒出器件时须将它 们放置于导静电材 料上来“温柔地”散 尽器件上可能存在 的电荷 52 Rev.1.0 Confidential ESD 的控制 2021/9/2644Towards Zero Defect Caused by ESD Principles of Protection 防护原则 *ESD is essentially a“Quality”problem ESD本质上是一种“质量”问题

44、*Total Company Commitment is required 需要全公司的承诺 *An integrated approach is more effective than a haphazard approach 一套完整的ESD防护方案比随便的方案更有效.53 Rev.1.0 Confidential ESD 的控制 2021/9/2645Towards Zero Defect Caused by ESD A System Approach to Corporate ESD Protection 全公司范围ESD防护的系统方案 Requires:必要项目：*Co-ordina

45、tor 总协调负责人 *Standards 标准 *Procedures 程序 *Audit 审查 *Training 培训 *Materials 材料 54 Rev.1.0 Confidential ESD 的控制 2021/9/2646Towards Zero Defect Caused by ESD Four Basic Steps towards successful implementation 成功执行的4个基本步骤：*Management Commitment 管理层的支持 *Control of Supplies 供应商的控制 *Comprehensive in-house s

46、ystem 完善的内部系统 *Tell your customers 提示客户 55 Rev.1.0 Confidential ESD 的控制 2021/9/2647Towards Zero Defect Caused by ESD 芯片内几何结构的不断减小 Decreasing geometrical structures of microchips +Increasing integration density集成度的增加 Chips more sensitive to ESD 器件对ESD越来越敏感 56 Rev.1.0 Confidential 关于未来 2021/9/2648Towa

47、rds Zero Defect Caused by ESD Summary for Part 2 第二部分的小结 1.The 3 basic concept of ESD control are:ESD控制的3个基本概念 a)Grounding 接地 b)Isolation 隔离 c)Neutralisation 中和 2.The importance of an EPA EPA的重要性 3.ESD is a quality issue ESD是一种质量问题 4.ESD prevention requires total company commitment,comprehensive in-

48、house system and control of supplies,last but not least informing your customers ESD防护要求管理层的支持，完善的内部管理和供应商 的控制，以及提示客户 57 Rev.1.0 Confidential ESD的控制 2021/9/2649Towards Zero Defect Caused by ESD Part III System for ESD Protection 第三部分ESD防护系统 58 Rev.1.0 Confidential ESD防护系统 2021/9/2650Towards Zero Def

49、ect Caused by ESD System for External ESD Protection(Corporation)外部的ESD防护系统（公司）*Goal of Corporation 公司目标 *Internal and External Protection 内部和外部防护 *Organisation of Corporation 公司组织 *Responsibility in the ESD team 公司ESD小组的职责 *Standard for the CRMA QUW82-014 59 Rev.1.0 Confidential ESD防护系统 2021/9/2651

50、Towards Zero Defect Caused by ESD Goal of CRMA 安盛的目标 Prevention of ESD failures from receiving wafer to delivery IC to customer 从接收wafer到交付IC至客户 全程防止ESD失效 60 Rev.1.0 Confidential ESD防护系统 2021/9/2652Towards Zero Defect Caused by ESD 内部和外部的防护 Internal and External Protection Internal Protection 内部的防护