利用FIB制备TEM样品简明教程.ppt

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1、 Recipe of making TEM sample9/15/2014 Deposition E-beam depositon(10 minutes)Voltage(kV)Current(nA)Size(m)X*Y*ZStage degree()SiO251.610*2*50Pt51.610*2*10Ion-beam deposion(15 minutes)Voltage(kV)CurrentSize(m)X*Y*ZStage degree()Pt2081pA10*2*0.752Pt300.1nA10*2*0.752 U-cut(25 minutes)Voltage(kV)Current(

2、nA)Size(m)X*Y*ZStage degree()Regular cross-section30515*4*253(front side)Regular cross-section30515*8*451(back side)Clean cross-section30115*y*253(front side)Clean cross-section30115*y*251(back side)U-cut3010 Lift-out(20 minutes)Voltage(kV)CurrentSize(m)X*Y*ZStage degree()Bond probe with sample3050p

3、A0Cut to release sample301nA0Bond sample with grid3050pA0Cut the probe bond 301nA0Thin down to 600nmVoltage(kV)Current(nA)Size(m)X*Y*ZStage degree()Clean cross-section300.58*y*253(front side)Clean cross-section300.58*y*251(back side)For reducing the redeposion,the front and back sides need to be thi

4、nned repeatedly.Every thinning time shall less than one minute,then move to the other side to work.Thin down(10 minutes)Voltage(kV)Current(pA)Size(m)X*Y*ZStage degree()Clean cross-section20378*y*253(front side)Clean cross-section20378*y*251(back side)Thin down to 200nm(15 minutes)Voltage(kV)Current(

5、pA)Size(m)X*Y*ZStage degree()Clean cross-section20378*y*353(front side)Clean cross-section20378*y*351(back side)Thin down to less than 100nm(15 minutes)Voltage(kV)Current(pA)Size(m)X*Y*ZStage degree()Clean cross-section10238*y*353(front side)Clean cross-section10238*y*351(back side)Clean cross-section5298*y*353(front side)Clean cross-section5298*y*351(back side)Final Thin down(10 minutes)