(精品)电子信息工程专业英语翻译清华出版社English_for_IT_and_EE-02.ppt

《(精品)电子信息工程专业英语翻译清华出版社English_for_IT_and_EE-02.ppt》由会员分享，可在线阅读，更多相关《(精品)电子信息工程专业英语翻译清华出版社English_for_IT_and_EE-02.ppt（62页珍藏版）》请在淘文阁 - 分享文档赚钱的网站上搜索。

1、信息科学与电子工程专业英语Technical EnglishFor Information Science and Electronic Engineering信息科学与电子工程专业英语Unit 2Integrated Circuits信息科学与电子工程专业英语Part IThe Integrated Circuit 3New Wordstransistor transistor 晶体管晶体管晶体管晶体管topologytopology拓扑，布局拓扑，布局拓扑，布局拓扑，布局flipflopflipflop触发器，双稳态多谐振荡器触发器，双稳态多谐振荡器触发器，双稳态多谐振荡器触发器，双稳态多

2、谐振荡器 diedie印模，模子印模，模子印模，模子印模，模子silicon silicon 硅硅硅硅valvevalve阀阀阀阀phosphorous phosphorous 磷的磷的磷的磷的insulateinsulate绝缘，隔离绝缘，隔离绝缘，隔离绝缘，隔离bipolar bipolar 有两极的，双极的有两极的，双极的有两极的，双极的有两极的，双极的dopingdoping掺杂掺杂掺杂掺杂(质质质质)basebase基极基极基极基极germaniumgermanium锗锗锗锗emitteremitter发射极发射极发射极发射极boronboron硼硼硼硼draindrain漏极漏极漏

3、极漏极fieldeffectfieldeffect场效应场效应场效应场效应diodediode二极管二极管二极管二极管collectorcollector集电极集电极集电极集电极slabslab厚片，板层厚片，板层厚片，板层厚片，板层gategate栅极栅极栅极栅极4New Wordssourcesource源极源极源极源极ceramicceramic陶瓷陶瓷陶瓷陶瓷protrudeprotrude突出突出突出突出complementarycomplementary互补的，补充的互补的，补充的互补的，补充的互补的，补充的 soldersolder焊接，焊料焊接，焊料焊接，焊料焊接，焊料51Di

4、gital logic and electronic circuits Digital logic and electronic circuits derive their functionality derive their functionality from electronic switches called transistorfrom electronic switches called transistor.Roughly speaking,Roughly speaking,the transistor can be likened to an electronically co

5、ntrolled the transistor can be likened to an electronically controlled valve whereby energy applied to one connection of the valve valve whereby energy applied to one connection of the valve enables energy to flow between two other connections.enables energy to flow between two other connections.1 1

6、 由称为晶体管的电子开关由称为晶体管的电子开关由称为晶体管的电子开关由称为晶体管的电子开关得到它们的（各种）功能得到它们的（各种）功能得到它们的（各种）功能得到它们的（各种）功能粗略地说，晶体管好似一种电子控制阀，粗略地说，晶体管好似一种电子控制阀，粗略地说，晶体管好似一种电子控制阀，粗略地说，晶体管好似一种电子控制阀，由此加在阀一端的能量可以使能量在另由此加在阀一端的能量可以使能量在另由此加在阀一端的能量可以使能量在另由此加在阀一端的能量可以使能量在另外两个连接端之间流动。外两个连接端之间流动。外两个连接端之间流动。外两个连接端之间流动。61By combining multiple tra

7、nsistors,digital logic building By combining multiple transistors,digital logic building blocks such as AND gates and flipflops are formed.blocks such as AND gates and flipflops are formed.Transistors,in turn,are made from semiconductors.Transistors,in turn,are made from semiconductors.Consult a Con

8、sult a periodic table of elements in a college chemistry textbook,and periodic table of elements in a college chemistry textbook,and you will locate semiconductors as a group of elements you will locate semiconductors as a group of elements separating the metals and nonmetals.separating the metals a

9、nd nonmetals.2 2 查阅大学化学书中的元素周期表，查阅大学化学书中的元素周期表，查阅大学化学书中的元素周期表，查阅大学化学书中的元素周期表，你会查到半导体是介于金属与非金你会查到半导体是介于金属与非金你会查到半导体是介于金属与非金你会查到半导体是介于金属与非金属之间的一类元素。属之间的一类元素。属之间的一类元素。属之间的一类元素。71They are called semiconductors because of their ability to They are called semiconductors because of their ability to behave

10、as both metals and nonmetals.behave as both metals and nonmetals.A semiconductor can be A semiconductor can be made to conduct electricity like a metal or to insulate as a made to conduct electricity like a metal or to insulate as a nonmetal does.nonmetal does.These differing electrical properties c

11、an be These differing electrical properties can be accurately controlled by mixing the semiconductor with small accurately controlled by mixing the semiconductor with small amounts of other elements.amounts of other elements.可使半导体像金属那样导电，可使半导体像金属那样导电，可使半导体像金属那样导电，可使半导体像金属那样导电，或者像非金属那样绝缘。或者像非金属那样绝缘。或

12、者像非金属那样绝缘。或者像非金属那样绝缘。81This mixing is called doping.A semiconductor can be doped to This mixing is called doping.A semiconductor can be doped to contain more electrons(Ntype)or fewer electrons(Ptype).contain more electrons(Ntype)or fewer electrons(Ptype).Examples of commonly used semiconductors are

13、silicon and Examples of commonly used semiconductors are silicon and germanium.germanium.Phosphorous and boron are two elements that are Phosphorous and boron are two elements that are used to dope Ntype and Ptype silicon,respectively.used to dope Ntype and Ptype silicon,respectively.3 3N N型硅半导体掺入磷元

14、素，而型硅半导体掺入磷元素，而型硅半导体掺入磷元素，而型硅半导体掺入磷元素，而P P型硅半导体掺入硼元素。型硅半导体掺入硼元素。型硅半导体掺入硼元素。型硅半导体掺入硼元素。92A transistor is constructed by creating a sandwich of A transistor is constructed by creating a sandwich of differently doped semiconductor layers.The two most differently doped semiconductor layers.The two most

15、common types of transistors,common types of transistors,the bipolarjunction transistor the bipolarjunction transistor(BJT)and the fieldeffect transistor(FET)are schematically(BJT)and the fieldeffect transistor(FET)are schematically illustrated in Figure 2.1illustrated in Figure 2.1.NPAnodeCathodeNNP

16、SourceGateDrainNNPCollectorEmitterBaseCollectorBaseEmitterDrainSourceGateAnodeCathodeFETDiodeBJT图图图图2.12.1给出了双极型给出了双极型给出了双极型给出了双极型晶体管和场效应晶晶体管和场效应晶晶体管和场效应晶晶体管和场效应晶体管的图示。体管的图示。体管的图示。体管的图示。102This figure shows both the silicon structures of these elements This figure shows both the silicon structures o

17、f these elements and and their graphical symbolic representation as would be seen their graphical symbolic representation as would be seen in a circuit diagramin a circuit diagram.The BJT shown is an NPN transistor,.The BJT shown is an NPN transistor,because it is composed of a sandwich of NPN doped

18、 silicon.because it is composed of a sandwich of NPN doped silicon.When a small current is injected into the base terminal,a When a small current is injected into the base terminal,a larger current is enabled to flow from the collector to the larger current is enabled to flow from the collector to t

19、he emitter.emitter.它们用于电路图中的符号它们用于电路图中的符号它们用于电路图中的符号它们用于电路图中的符号当小电流注入基极时，可使较大当小电流注入基极时，可使较大当小电流注入基极时，可使较大当小电流注入基极时，可使较大的电流从集电极流向发射极。的电流从集电极流向发射极。的电流从集电极流向发射极。的电流从集电极流向发射极。112The FET shown is an Nchannel FET,which is composed of The FET shown is an Nchannel FET,which is composed of two Ntype regions

20、separated by a Ptype substrate.two Ntype regions separated by a Ptype substrate.When a When a voltage is applied to the insulated gate terminal,a current is voltage is applied to the insulated gate terminal,a current is enabled to flow from the drain to the source.enabled to flow from the drain to t

21、he source.It is called N It is called Nchannel,channel,because the gate voltage induces an Nchannel within because the gate voltage induces an Nchannel within the substrate,enabling current to flow between the Nregions.the substrate,enabling current to flow between the Nregions.将电压加在绝缘的栅极上时，将电压加在绝缘的

22、栅极上时，将电压加在绝缘的栅极上时，将电压加在绝缘的栅极上时，可使电流由漏极流向源极。可使电流由漏极流向源极。可使电流由漏极流向源极。可使电流由漏极流向源极。因为栅极电压诱导基底上的因为栅极电压诱导基底上的因为栅极电压诱导基底上的因为栅极电压诱导基底上的N N通道，通道，通道，通道，使电流能在两个使电流能在两个使电流能在两个使电流能在两个N N区域之间流动。区域之间流动。区域之间流动。区域之间流动。123Another basic semiconductor structure shown in Figure 2.1 is Another basic semiconductor structu

23、re shown in Figure 2.1 is a diode,which is formed simply by a junction of Ntype and Pa diode,which is formed simply by a junction of Ntype and Ptype silicon.type silicon.Diodes act like oneway valves by conducting Diodes act like oneway valves by conducting current only from P to N.current only from

24、 P to N.二极管的作用就像一个单向阀门，二极管的作用就像一个单向阀门，二极管的作用就像一个单向阀门，二极管的作用就像一个单向阀门，由于电流只能从由于电流只能从由于电流只能从由于电流只能从P P流向流向流向流向N N。133Special diodes can be created that emit light when a voltage is Special diodes can be created that emit light when a voltage is applied.Appropriately enough,these components are called a

25、pplied.Appropriately enough,these components are called light emitting diodes,or LEDs.light emitting diodes,or LEDs.These small lights are These small lights are manufactured manufactured by theby the millions and are found in diverse millions and are found in diverse applications from telephones to

26、 traffic lights.applications from telephones to traffic lights.这种小灯泡数以百万计地被制造这种小灯泡数以百万计地被制造这种小灯泡数以百万计地被制造这种小灯泡数以百万计地被制造出来，有各种各样的应用，从电出来，有各种各样的应用，从电出来，有各种各样的应用，从电出来，有各种各样的应用，从电话机到交通灯。话机到交通灯。话机到交通灯。话机到交通灯。144The resulting small chip of semiconductor material on which a The resulting small chip of semi

27、conductor material on which a transistor or diode is fabricated can be encased in a small transistor or diode is fabricated can be encased in a small plastic package for protection against damage and plastic package for protection against damage and contamination from the outside world.contamination

28、 from the outside world.4 4 半导体材料上制作晶体管或二极管半导体材料上制作晶体管或二极管半导体材料上制作晶体管或二极管半导体材料上制作晶体管或二极管所形成的小芯片用塑料封装以防损所形成的小芯片用塑料封装以防损所形成的小芯片用塑料封装以防损所形成的小芯片用塑料封装以防损伤和被外界污染。伤和被外界污染。伤和被外界污染。伤和被外界污染。154Small wires are connected within this package between the Small wires are connected within this package between the s

29、emiconductor sandwich and pins that semiconductor sandwich and pins that protrude from the protrude from the package to make electrical contact with other parts of the package to make electrical contact with other parts of the intended circuitintended circuit.从封装内伸出以便与（使用该晶从封装内伸出以便与（使用该晶从封装内伸出以便与（使用

30、该晶从封装内伸出以便与（使用该晶体管的）电路其余部分连接。体管的）电路其余部分连接。体管的）电路其余部分连接。体管的）电路其余部分连接。164Once you have several discrete transistors,digital logic can be Once you have several discrete transistors,digital logic can be built by directly wiring these components together.The circuit built by directly wiring these compone

31、nts together.The circuit will function,but will function,but any substantial amount of digital logic will any substantial amount of digital logic will be very bulky,because several transistors are required to be very bulky,because several transistors are required to implement each of the various typ

32、es of logic gates.implement each of the various types of logic gates.任何实质性的数字逻辑（电路）都将十分任何实质性的数字逻辑（电路）都将十分任何实质性的数字逻辑（电路）都将十分任何实质性的数字逻辑（电路）都将十分庞大，因为要在各种逻辑门中每实现一种庞大，因为要在各种逻辑门中每实现一种庞大，因为要在各种逻辑门中每实现一种庞大，因为要在各种逻辑门中每实现一种都需要多个晶体管。都需要多个晶体管。都需要多个晶体管。都需要多个晶体管。175At the time of the invention of the transistor i

33、n 1947 by John At the time of the invention of the transistor in 1947 by John Bardeen,Walter Brattain,and William Shockley,the only way Bardeen,Walter Brattain,and William Shockley,the only way to assemble multiple transistors into a single circuit was to assemble multiple transistors into a single

34、circuit was to buy to buy separate discrete transistors and wire them togetherseparate discrete transistors and wire them together.In 1959,.In 1959,Jack Kilby and Robert Noyce independently invented Jack Kilby and Robert Noyce independently invented a means a means of fabricating multiple transistor

35、s on a single slab of of fabricating multiple transistors on a single slab of semiconductor materialsemiconductor material.购买多个分离的晶体管，购买多个分离的晶体管，购买多个分离的晶体管，购买多个分离的晶体管，将它们连在一起。将它们连在一起。将它们连在一起。将它们连在一起。一种将多个晶体管做在同一片一种将多个晶体管做在同一片一种将多个晶体管做在同一片一种将多个晶体管做在同一片半导体材料上的方法半导体材料上的方法半导体材料上的方法半导体材料上的方法185Their inve

36、ntion would come to be known as the integrated Their invention would come to be known as the integrated circuit,or IC,which is the foundation of our modern circuit,or IC,which is the foundation of our modern computerized world.An IC is so called because it integrates computerized world.An IC is so c

37、alled because it integrates multiple transistors and diodes onto the same small multiple transistors and diodes onto the same small semiconductor chip.semiconductor chip.Instead of having to solder individual Instead of having to solder individual wires between discrete components,an IC contains man

38、y wires between discrete components,an IC contains many small components that are already wired together in the small components that are already wired together in the desired topology to form a circuit.desired topology to form a circuit.ICIC包含按照形成电路所要求的拓扑结构包含按照形成电路所要求的拓扑结构包含按照形成电路所要求的拓扑结构包含按照形成电路所要

39、求的拓扑结构连在一起的许多小元件，而无需再将分连在一起的许多小元件，而无需再将分连在一起的许多小元件，而无需再将分连在一起的许多小元件，而无需再将分立元件的导线焊接起来。立元件的导线焊接起来。立元件的导线焊接起来。立元件的导线焊接起来。196A typical IC,without its plastic or ceramic package,is A typical IC,without its plastic or ceramic package,is a a square or rectangular silicon die measuring from 2 to 15 mm squar

40、e or rectangular silicon die measuring from 2 to 15 mm on an edge.on an edge.Depending on the level of technology used to Depending on the level of technology used to manufacture the IC,manufacture the IC,there maythere may be anywhere from a dozen to be anywhere from a dozen to tens of millions of

41、individual transistors on this small chiptens of millions of individual transistors on this small chip.每一边每一边每一边每一边2mm2mm至至至至15mm15mm的的的的方形或矩形硅片方形或矩形硅片方形或矩形硅片方形或矩形硅片在这种小片上可能有几十个在这种小片上可能有几十个在这种小片上可能有几十个在这种小片上可能有几十个到几百万个晶体管到几百万个晶体管到几百万个晶体管到几百万个晶体管206This amazing density of electronic components indica

42、tes that This amazing density of electronic components indicates that the transistors and the wires that connect them are extremely the transistors and the wires that connect them are extremely small in size.Dimensions on an IC are measured small in size.Dimensions on an IC are measured inin units o

43、f units of micrometers,micrometers,with one micrometer(1with one micrometer(1m m m mm)being one millionth m)being one millionth of a meterof a meter.To serve as a reference point,a human hair is.To serve as a reference point,a human hair is roughly 100roughly 100m m m mm m inin diameter.Some modern

44、ICs contain diameter.Some modern ICs contain components and wires that are measured in increments as components and wires that are measured in increments as small as 0.1small as 0.1m m m mm!m!1 1微米是微米是微米是微米是1 1米的百万分之一米的百万分之一米的百万分之一米的百万分之一216Each year,researchers and engineers have been finding new E

45、ach year,researchers and engineers have been finding new ways to steadily reduce these feature sizes to pack more ways to steadily reduce these feature sizes to pack more transistors into the same silicon area,as indicated in Figure transistors into the same silicon area,as indicated in Figure 2.2.2

46、.2.227When an IC is designed and fabricated,it generally follows When an IC is designed and fabricated,it generally follows one of two main transistor technologies:bipolar or metalone of two main transistor technologies:bipolar or metaloxide semiconductor(MOS).Bipolar processes create BJTs,oxide sem

47、iconductor(MOS).Bipolar processes create BJTs,whereas MOS processes create FETs.Bipolar logic was more whereas MOS processes create FETs.Bipolar logic was more common before the 1980s,but common before the 1980s,but MOS technologies have since MOS technologies have since accounted the great majority

48、 of digital logic ICsaccounted the great majority of digital logic ICs.此后此后此后此后MOSMOS技术在数字逻辑集成技术在数字逻辑集成技术在数字逻辑集成技术在数字逻辑集成电路中占据了大多数电路中占据了大多数电路中占据了大多数电路中占据了大多数237Nchannel FETs are fabricated in an NMOS process,and PNchannel FETs are fabricated in an NMOS process,and Pchannel FETs are fabricated in a P

49、MOS process.In the 1980s,channel FETs are fabricated in a PMOS process.In the 1980s,complementaryMOS,or CMOS,became the complementaryMOS,or CMOS,became the dominant dominant process technologyprocess technology and remains so to this day.CMOS ICs and remains so to this day.CMOS ICs incorporate both

50、NMOS and PMOS transistors.incorporate both NMOS and PMOS transistors.占主导地位的加工技术占主导地位的加工技术占主导地位的加工技术占主导地位的加工技术信息科学与电子工程专业英语Part IIApplication Specific Integrated Circuit 25New Wordsapplicationspecific integrated applicationspecific integrated circuitcircuit专用集成电路专用集成电路专用集成电路专用集成电路(ASIC)(ASIC)fieldpro