【精品】SoC设计方法与实现第十一章 低功耗精品ppt课件.ppt
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1、SoC设计方法与实现第十一章 低功耗OutlineWhy low powerSources of power consumptionLow power design methodologyLow power techniques Power analysis and toolsTrends in the futureWhy Low PowerPotable system-Battery lifetimenExample:mobile phone,PDA,Digital cameraDesktops:high power consumptionnReliability and performan
2、cenNeed expensive chip package,cooling systemSeveral deleterious effectsnDecreased reliability and performancenIncreased cost:packaging cost and cooling systemnExceed power limits of the chip&systemPower,Cost and HeatComponent:silicon and packagenIncreased die size(wider power busses)nNeed better th
3、ermal capabilities(package material)nNeed better electrical capabilities System:Cooling and mechanicalsnLarger fansnOversized power suppliesPower limits to the walln1100W dc limit for 110V/20A plugChallenge of Design as Process ScalingSource of Power Dissipation in CMOS DevicesC =node capacitancesNs
4、w=switching activities (number of gate transitions per clock cycle)F =frequency of operationVDD =supply voltageQsc =charge carried byshort circuit currentper transitionIleak =leakage currentStatic Power Consumption:Leakage currents:nSub-threshold current(I2)nGate leakage nGate tunnelling(I4)nGate in
5、duced drain leakage(I3)npn-junction reverse current(I1)DC currentsnAnalog circuit:sense-amps,pull-upsnState dependentLeakage vs.ProcessWhat will be the dominated leakage current?Long Channel(L1um)Very small leakageShort channel(L180nm,tox30A)Subthreshold leakageVery short channel(L90nm,tox20A)subthr
6、eshold+gate leakageNano-scaled(L90nm,Tox20A)Subthreshold+gate+junction leakageSub-threshold leakage current Has become quite important with technology scalingGate leakage currentIs becoming important with shrinking device dimensions PN junction leakage currentNegligible OutlineWhy low powerSources o
7、f power consumptionLow power design methodologyLow power techniques Low power analysis and toolsTrends in the futureLow Power Design MethodologyMust know your systemMaximize the performance while minimize the power consumptionMinimize the power consumption while maximize the performanceOpportunities
8、 for Power SavingOutlineWhy low powerSources of power consumptionLow power design methodologyLow power techniques Power analysis and toolsTrends in the futureLow Power TechniquesLeakage power controlDynamic power controlArchitecture level power optimizationSystem level power optimizationLow Power Te
9、chniquesProcess scaling nLow Vdd,Multi-thresholdVoltage scalingnSubstrate bias(200mv)nMulti-voltage(voltage island)nDynamic voltage scaling;multi-thresholdHW design techniquesnPre-computation,glitch minimization,Logic level,Physical level optimizationLow power System/SW nPower aware Operation System
10、,compiler,SW design etc.Low Power Techniques on Chip DesignLeakage PowernMulti Vt optimizationnPower gatingnSubstrate biasnPower gatingDynamic PowernMulti-voltage designnAdvanced clock-gatingnGate-level power optimizationTechniques for Reduce Leakage PowerUsing Multi-Vt LibrariesTiming and leakage t
11、radeoffnLow Vt cell:faster speed,high leakagenHigh Vt cell:slower speed,lower leakagenPrinciple:low Vt for critical path and high Vt for non-critical pathsHigh Vt cell on Critical PathHints:1.You need to have dual Vt library2.You need to pay for the extra layer mask for multi-vt Using Multi-Vt Libra
12、ries cont.Synthesis Strategy:nUse high Vt cells first,then fix setup violation by replace the high Vt cells on the critical path to low Vt cellsnUse low Vt cells first,then swap to high Vt cells,fix setup violation by swap low Vt cells on the pathsNo area penalty nLibrary design for freely mix and m
13、atch on SoC designPower Gating Also called Multi-Threshold CMOS(MTCOMS),logic sleep control,etc.Active mode:sleep control devices on,VDDV and GNDV act as virtual supplySleep mode:sleep control devices off,reduce leakagenHigh Vt transistors reducing both leakage and switching powerPower Gating cont.S
14、leep transistors used only on the supply rail or on both supply and ground railsnNot added on every gatePower gating retention registernActive modenHigh performance regular FF functionnSleep ModenCut-off VddnLow leakage stage saving latch functionBody BiasVariable threshold according to body biasing
15、Zero body bias in active mode(Low Vt)Reverse body bias in stand-by mode(High Vt)Tradeoff between the time on module turn-on and leakage currentTriple well structure CMOS InverterHint:Do you have the triple well structuredstandard cell lib?Techniques for Reduce Dynamic PowerMulti Voltage DesignBlock
16、based approach in the design flowNeed to additional isolation cells and voltage level-shifter cells between voltage domainsClock Gating TechnologyToggling consume power.Enable the module clock only when neededgated_clkEnableLogicGlobalClkComb.LogicDataRegClock Gating Cell DesignProblem with simple c
17、lock gating:nUncompleted cyclenGlitchClock Gating with LatchAdd a transparent-low latchMake sure the clk gating cells are placed tightly for correct function clk cell hardeningCommonly in SoC:make a“hardmacro”-clk gating cellRTL code for clk cell:always(clk or clk_en)if(!clk)ctrl_latch=clk_en;assign
18、 gclk=ctrl_latch&clkClock gating cells and a glitch free clock gatingClock Gating With Integrated Test LogicAbility to let clk pass through in test mode (TEST=1)Gated Clock in Clock Tree DesignDisable clocking near the root of a clock tree,instead of at each FF.Special care must be taken in clk tree
19、 synthesis to prevent the buffers inserted between clk root and the clk gating cellGate Level OptimizationTechnology independent optimization:nCircuit optimization:logic optimization,reduce redundant logicnTrimming for low power:reduce positive slacknGate resizingnPin swapping/reassignmentnRe-mappin
20、gnPhase assignmentnRe-factoringLow power driven technology mappingnlow power cellGate Level Optimization Gate SizingGate sizingnDown-size gates on fast paths to decrease their input capacitances for minimizing switching current in front driver nEnlarge heavily loaded gates to increase their output s
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