2023年及文献综述规范与要求新版.docx

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1、毕业设计（论文）一一外文翻译（原文）Elec t rod e lay o ut of ZnO p yroe 1 e c t r ic se n sorsAb s t r actI n the p r esent st u d y, an e 1 ectrode lay out of pyro elect r ic sensors is d ev e 1 o ped t o i mpr o v e e lect r ic signals. Voltage re s po n sivi t y is a main t ar g et to enhanc e the perf o rm a n ce

2、 o f p y roe 1 e c tr i c s e nsors. A pa r ti a 1 1 y c o ve r ed, top elec trod e has bee n pro ven t o effe c tivel y incr e ase the vol t a ge res ponsivityof p yroelectri c s ensors. I n the e x pe r i m e ntal results, t h e p r oposed elec t r o d e layou t wit h an array t y pe in ZnO pyro e

3、 lectr i c se n sors po s s e ssc d h i g her vol ta g e sig n al s , a b o ut 3. 6 ti mes that o f a ful 1 y c o v e r e d type, and a bou t 2 times tha t o f a par t ia 1 1 y c ove red type. Mo r eo ver, a f i nit e e lem e ntmod e1i s u sed t oexp 1 orethe tempera tu re varia t ionrat e in ZnOp y

4、roe1 ec t r i c senso rsf or both t hefu 1lycover e d and t he pa r t i allyco v ere de lec t r o des.I n thes i mulatio nresults, thepar t ial 1 yco v ere delectrode ca ni ndeedimprovethetem p e r ature variation ra t e in the ZnO 1 a yer.K ey wor d s: MEMS; P yroe 1 e c trie; S e n s or; ZnO 1. I

5、ntro d uc t i o nMulti 1 ay e r p y roelectr i c senso r s h a ve b e e n sue c e s s f u 1 1 y u s ed i n ma n y appli c at i o ns, s u c h as p ol 1 ut i on monito r ing, h ot imagd et e ct o r s, intr u d e r ala r ms, a nd ga s ana lysis. Th e y possessd detect i o n, room-temperatured detect i

6、o n, room-temperaturem a ny advantag e s includ i ng non-co oleo per a tion, lower s y s tem cost s , fast speeds, port -abi 1 i t y, having a wide s pe c tra 1 r es p o n s ew i thhigh sensit i vi ty and be i ngin t egr abl e w i th on-ch i p ci r c u it r y 1 -3 .The c onv e nt i onal p yroe 1 ect

7、rie se n so r s are com p ri s ed of a py r oelectr i c 1 a y er sandwiche d b etwee n t o p a nd bo t t o m e1 e c tr o des. T he t o ps i de is expos e dt o a hea t sou rce. T he d y nami cresp on se curr onto f p yr o ele c t ric sens ors is p ropo r ti o nal to t he temperaturevariation rate of

8、pyroele c tr i c laye r s 1. A hi g h e r tem p e r a t u r eveiriatio n r a te in the pyroele c t r i c layer 1 e ads to a h i g he r re s p o n se c urr e nt for t he p y roe 1e c t r icsens o rs. Aparti a 1 ly covere d ,top elect r ode has been proven to resultin a h igherresp o n s iv i ty than

9、that of a fully c overed elect rod e beca use it o p ens w i ndows for the ZnO kiyer t o d irectly c o me into con tact with thehea t source 4. The ref ore, the ele c trode la y o u t pl a ys a nimportant rolein p y r o el e ctr ic se n s o rs. This coneept has be en expan d edt oetch a th r e e-dim

10、ensiona 1 p atter n o n the r e spon-s i v e e 1 e me n t of LiTaO3; 1 a tera 1 tempera t u r e gradie n ts wi 1 1 b e i n due e d o n the s idcwall o f r espon s ive e 1 ements u n der hom o go n o u s i r r a d iatio n . Th e r efore, t he tem p e r a t ure va r i at ion rat e s of resp o nsive e

11、1 ements inc r eases, which c an i n c r eas e the vo 1 tag e res pons i v i ty of pyro e le c tr i c sens ors 5.ZnO is a unique m a terial becaus e i t p o s s e s ses v a r i o u s prop er ties 1 ike semic o nd u ctivi t y, p i ez o e 1 e ctricity, and pyroel e ctric ity. W ide band -gap wurtzit e

12、 phase ZnO has attra c t ed attentio n d u e t o i t s v e rsa t ility in many p ro mi s ing a p pl icatio n s,s uchas bluea n d u 1 travio 1 et 1 ight emi tters,t r a n s p a re n t c o nduct ors,s o lar c el 1 win d o ws, gas s e nsors, photovo 1 taic d e vic e s,pyro e 1 ectri c imaging sensors,

13、s u rface a c oustic w a v e (SAW)devices and fi Im b u Ik a c oust i c r e $ o nato r s (FBAR).ZnO film sh ave been s yn th e siz e d by n u mero u s m ethods, sueh a smetal o r g anicchemi c al vap or d e position, mol e cula r beam epi t ax y ,ma g net r onspu tt e r i ng,p ulsed las e r depositi

14、on, at omic layerdepos itio n , sp r aypy r ol y sis,the filte r ed c athodic vacu u m arctechn i que, a nd t he s o l-gel pr o ces s . T he qu a lity of ZnO films o b t a i ned b y thes e me t hod s depends on th e gr o wth met hods and co n d i t ions. Thus, p r ef e rential o r ien t a tion of Zn

15、 O f i 1msde p e nds o n growth c o nditi o ns. Th e mo s t d e ns e 1 y packed a nd thermody n am ically favora b 1 e grow t h o r i e ntat i on in a ZnO wurtzite structur e i s t h e o n e wi t h the c -a x is perp e ndicular t o a su b st rat e . ZnO f i 1 m s , w i th t hec axis normal to the s

16、u bst r a te,are pr e f e r red in many a p p 1 i cations, such as ZnO p y r oelectric d ev i ces 4, 6 and fi 1 m bulk ac o u s tic re s onators 7. The p yroel e ctri c i ty of ZnO i s a t tributable to non- c e n tro-symm e tri c a 1 crys t als and has a s pecific po 1 a r axis along the dire c tio

17、n of s p o nta n e o u s p o lari z ati o n 1, 2 . Given that ZnO i s sub j ected t o tem p er a ture va r iatio n s, its i n ternal p olariz a tio n will produ c e a n elect r ic field. ZnO f i 1ms are usu ally depos i ted b y RFspu t t eri n g. The prop e r t ies o f ZnO a re aff e cted by s p utt

18、 e r i ng con d iti o ns s u ch a s th e compo s it i on of mixed proce s s gases, workingSilicon subsiraie | I ZnO layer| Silicon nitride layer 口 Top electrcxte (Autr)J Botlom declrode (?u;Cr)Verticai 心 Silicon substrate二ZnO layer(Silicon nitride layer Q Top electrode (AuCr)A-A cross-sectionB-B cro

19、ss-section注意：英文翻译标题格式：Times New Roman-四号-加粗;英文正文：T imes New Rom a n一五号一单倍行距。毕业设计（论文）一一外文翻译（译文）外文译文标题英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工 作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工 作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工 作。英文翻译是个好工作。注意:中文译文 标题格式:宋体一三号一加粗；正文格式:宋体-五号-行距：1. 25倍行距。（1）翻译的资料必须与毕业设计有关翻译后至少

20、有2 0 2 3汉字（2） 文字简练、准确（特别注意术语）、流畅出处:关于X X X X义义研究文献综述湖州师范学院信息与工程学院（信息与工程系）06 0 833张三摘要：本文归纳了和研究中的关键问题，分析了及其的研究现状和发展趋势。在此 基础上，对的进一步研究进行了展望。关键词：XXX, XX, X X X, X X X X, X X X X X1、引言【第一小段:被研究问题的提出及其实践意义】【第二小段：简述被研究问题的现状和发展】【第三小段:研究这个问题的目的和动机】文献综述应对相关领域的研究情况和发展趋势作综合性评述。文献综述不能写毕业设计自身 的内容；文献综述除了写自己阅读的参考文献

21、及重要观点，及字数达成202 3以上,还重要 的应有同学自己的见解,应为写论文服务的，不是阅读参考文献的内容摘要，文献综述内容 不能是论文正文中的部分。参考文献在文中相应处标出。2、X X X X X的研究现状与发展趋势研究现状【第一小段：文献1提出一种技术，该技术，类似方法在文献2也被提及 【第二小段：根据文献3、4，阐述被研究问题的现状和存在的问题200字左右】 【第三小段:根据文献5、6,阐述被研究问题的现状和存在的问题2 00字左右】发展趋势【根据文献，阐述被研究问题的发展趋势300字左右】3、结束语【第一小段:阐述研究（开发）被研究问题的现实意义10。字左右】【第二、三小段：阐述清楚作者要做的工作300字左右】参考文献：（不得少于15篇）XXX等.义XX XX研究J. X XXX学报（自然科学版），2023, 1 8 （ 1 ）.1 XXX等.书名.出版社，2 0 2 3,1 0.文献综述格式规定：关于XXXXXX X XX研究:宋体一三号一加粗；正文格式:宋体一五号一行距：L 25倍行距。