模拟电路设计第2章.ppt

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1、Chapter 2Basic MOS Device PhysicsCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.1MOS Device StructureCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prep

2、ared by Travis N.Blalock,University of Virginia.2NMOS and PMOS with WellCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.3MOS SymbolsCopyright The McGraw-Hill Companies,Inc.Permission required for repro

3、duction or display.Slides prepared by Travis N.Blalock,University of Virginia.4MOS Channel FormationCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.5I/V CharacteristicsCopyright The McGraw-Hill Compani

4、es,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.6I/V CharacteristicsCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.7I/V Characteristic

5、s(cont.)Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.8I/V Characteristics(cont.)Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Bl

6、alock,University of Virginia.9Operation in Triode RegionCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.10Operation in Active(Saturation)RegionCopyright The McGraw-Hill Companies,Inc.Permission require

7、d for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.11Active Region(cont.)Active RegionCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.12Transconductance,gmCopyrigh

8、t The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.13Triode and Active Region TransitionActiveActiveCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travi

9、s N.Blalock,University of Virginia.14Threshold Voltage and Body EffectCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.15Threshold Voltage and Body Effect(cont.)No Body Effect With Body EffectCopyright

10、The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.16Channel Length ModulationLLCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University

11、 of Virginia.17Channel Length Modulation(cont.)Copyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.18Subthreshold ConductionCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or d

12、isplay.Slides prepared by Travis N.Blalock,University of Virginia.19MOS LayoutCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.20Device CapacitancesCopyright The McGraw-Hill Companies,Inc.Permission req

13、uired for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.21Layout for Low CapacitanceCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.22G-S and G-D CapacitanceCopyrig

14、ht The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.23MOS Small Signal ModelsCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University

15、of Virginia.24Bulk Transconductance,gmbCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.25Gate ResistanceCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides pr

16、epared by Travis N.Blalock,University of Virginia.26MOS Small Signal Model with CapacitanceCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.27C-V of NMOSCopyright The McGraw-Hill Companies,Inc.Permission required for reproduction or display.Slides prepared by Travis N.Blalock,University of Virginia.28