模拟电路分析与设计英文pptch.ppt

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1、Huazhong University of Science and TechnologyThe Department of Electronics and Information EngineeringFirst Term 08/09Electronic Circuit Analysis and DesignDr.Tianping DengPART 1SEMICONDUCTOR DEVICES AND BASIC APPLICATIONSChapter 1Semiconductor Materials and DiodesChapter 2Diode CircuitsChapter 3The

2、 Field-Effect TransistorChapter 4Basic FET AmplifiersChapter 5The Bipolar Junction TransistorChapter 6Basic BJT AmplifiersChapter 7Frequency ResponseChapter 8Output Stages and Power AmplifiersPART 2ANALOG ELECTRONICSChapter 9Ideal Operational Amplifiers and Op-Amp CircuitsChapter 10Integrated Circui

3、t Biasing and Active LoadsChapter 11Differential and Multistage AmplifiersChapter 12Feedback and StabilityChapter 13Operational Amplifier CircuitsChapter 14Nonideal Effects in Operational Amplifier CircuitsChapter 15Applications and Design of Integrated CircuitsContentsChapter 1Semiconductor Materia

4、ls and DiodesCh1.Semiconductor Materials and Diodes1.1 Semiconductor Materials and Properties1.2 The PN Junction1.4 Diode Circuits AC Equivalent Circuit1.3 Diode Circuits DC Analysis and Models1.5 Other Diode Types1.6 Design Application:Diode Thermometer1.7 Summary1.1 Semiconductor Materials and Pro

5、perties1.1.1 Intrinsic Semiconductor1.1.2.Extrinsic SemiconductorN-type semiconductorP-type semiconductorCh1.Semiconductor Materials and Diodes 1.1 Semiconductor Materials and PropertiesMaterialsConductorInsulatorSemiconductor:conduction electrons_electrical conductivity:electrons in bonding mechani

6、sm _cannot move:silicon,germanium,gallium arsenide1.1.1.Intrinsic SemiconductorSilicon Valley1.1.1 Intrinsic Semiconductor1.Silicon,germanium_single-crystal structureAt temperature T=0oK,silicon is an insulator.1.1.1 Intrinsic SemiconductorEach Si atom shares one electron with each of its four close

7、st neighbors so that its valence band will have a full 8 electrons.+4+4+4+41.1.1 Intrinsic Semiconductor2.When T increases,free electrons and“holes”are created In pure semiconductor,the concentration of electrons and holes are equal,and very small,so it has very small conductivity.Increasing tempera

8、ture,generating electron-hole pairsFree electron-produced by thermal ionization.It can move freely in the lattice structure so as to form current.Hole-empty position in broken covalent bond.It can be filled by free electron(recombination)and can also“move”freely to form current.CarriersA free electr

9、on is negative charge and a hole is positive charge.1.1.1 Intrinsic SemiconductorA hole can be regarded as a positive charge carrierDoes the hole can move through the crystal freely?1.1.2.Extrinsic Semiconductor1.phosphorus+silicon=N-type semiconductorHoles present because of thermal energyWhat are

10、the majority carriers in n-type materials?What are the minority carriers in n-type materials?RedundantelectronN-type semiconductorDonor ImpurityPositive charge N-type semiconductor material (phosphorus)donor:provide free electrons majority carrier electrons minority carrier holesDoped Semiconductorn

11、 type SiSiSiSiSiSiSiSiSi PDonorDonorFree EFree Ebound bound chargecharge Donor-pentavalent impurity provides free electrons,usually entirely ionized.Positive bound charge-impurity atom donating electron gives rise to positive bound charge.Majority carriers-free electrons(mostly generated by ionized

12、donor and a very tiny portion by thermal ionization).Minority carriers-holes(only generated by thermal ionization).n type Semiconductor1.1.2.Extrinsic SemiconductorP-type semiconductorMotion of holesHoleAcceptor ImpurityNegative chargeWhat are the majority carriers in P-type materials?What are the m

13、inority carriers in P-type materials?2.boron+silicon=P-type semiconductor P-type semiconductor material (Boron)acceptor:accept an extra electrons majority carrier holes minority carrier electronsDoped Semiconductorp type BoundBoundcharge charge SiSiSiSiSiSiSiSiSiAlAlHoleHoleAcceptorAcceptorAcceptor-

14、trivalent impurity provides holes,usually entirely ionized.Negative bound charge-impurity atom accepting hole give rise to negative bound chargeMajority carriers-holes(mostly generated by ionized acceptor and a tiny small portion by thermal ionization)Minority carriers-free electrons(only generated

15、by thermal ionization.)p type Semiconductor1.1.2.Extrinsic Semiconductor2.boron+silicon=P-type semiconductor1.phosphorus+silicon=N-type semiconductorPositive Charges+holes=electronsNegative Charges+electrons=holesmajority carrierminority carrierDoping Temperaturemajority carrierDopingminority carrie

16、r TemperatureMajority carrier is only determined by the impurity,but independent of temperature.Minority carrier is strongly affected by temperature.If the temperature is high enough,characteristics of doped semiconductor will decline to the one of intrinsic semiconductor.Conclusion on the doped sem

17、iconductor 1.1.2.Extrinsic Semiconductor Diffusion:a concentration of charge carriers tends to spread with time1.1.2.Extrinsic Semiconductor Diffusion:a concentration of charge carriers tends to spread with timeDrift:The average motion of the charge carriers due to an applied electric field.1.2 The

18、PN Junction1.2.1 The Equilibrium PN Junction1.2.2 Forward-Biased PN Junction1.2.3 Reverse-Biased PN Junction1.2.4 PN Junction Diode1.2 The PN Junction1.2.1 The Equilibrium PN Junction NPholeElectronHoles diffuse from P-to N-region.Electrons diffuse from N-to P-region1.2 The PN Junction1.2.1 The Equi

19、librium PN Junction1.Depletion region(space-charge region)_PN junctionDepletion regionPN JunctionElectric field2.Electric fieldNP1.2.1 The Equilibrium PN Junction3.Drift current IDR=diffusion current IDF _Balance1.Depletion region(space-charge region)_PN junction2.Electric fieldIDFIDRNP1.2.1 The Equ

20、ilibrium PN JunctionThe procedure of forming pn the dynamic equilibrium of drift and diffusion movements for carriers in the silicon.In detail,there are 4 steps:DiffusionSpace charge regionDriftEquilibrium1.2.2 Forward-Biased PN JunctionPositive voltage is applied to P,forward-biased PN.1.Depletion

21、region is reduced,low resistance.2.Majority carriers flow across PN junction more easily.IDFIDR,iD=IDFIDRvDD-region electric fieldApplied electric fieldiDvDThe two fields are opposite.The results are:1.2.2 Forward-Biased PN Junction1.2.2 Forward-Biased PN Junction3.The current-voltage(v-i)characteri

22、sticThe current is an exponential function of voltage.4.V _turn-on,cut-in voltageIS_reverse-bias saturation currentVT _thermal voltage at room temperature VT=0.026VvD1.2.3 Reverse-Biased PN JunctionPositive voltage is applied to N,reverse-biased PN.1.Depletion region is increased,high resistance.2.M

23、ajority carriers cannot cross the junction.Minority carriers sweep across PN easily.IDF T0T1 T0IS and VT are functions of T.T increasesrequired forward-bias voltage decrease1.2.4 PN Junction Diode3.Switching Transient Storage time ts Turn-off time tfWhen forward-bias,excess carrier is stored in both

24、 regions.When switching from forward to reverse,it need time to remove.1.3 Diode Circuits DC Analysis and Models1.3.1 Models1.3.2 DC Analysis1.3 Diode Circuits_DC Analysis and Models1.3.1 Models1.Ideal modelDescribing i-v characteristic,when analyzing circuit(a)(b)(c)Case 2Case 11.3.1 Models2.Piecew

25、ise modelTwo linear approximations1.3.2 DC Analysis Determine the diode voltage and current for the circuit shown in figure,AssumeSol:For diodeFor R and VPS branch(a)Diode circuit(b)Conventional circuitPSPSVPS=5V,R=2kFind two special points(5V,0mA)and(0V,2.5mA)(1)using the graphical analysis.Interse

26、ction_quiescent point or Q-pointVDID1.3.1 Models3.Small signal model_AC model When a diode is operating in the small range，it can be a small-signal incremental resistance.That is:small-signal conductanceRoom T（T=300K）1.3.2 DC Analysis(2)using the model analysis.Ideal Model Piecewise model_1（Silicon

27、Diode）(a)Diode circuit(b)ConventionPSPS Piecewise model_2Assume（Silicon Diode）VD=V+ID rf=1.09V1.4 Diode Circuits_AC Equivalent Circuit1.4.1 Sinusoidal Analysis1.4.1 Sinusoidal AnalysisE.g.1.2.Determine the output voltage in Fig.1.31.Assume circuit and parameter of VPS=5V,R=2k,Vr=0.6V,and vi=0.1sinwt

28、(V).Sol:because(1)For the DC analysis,we set vi=0,then(2)For the AC analysis,we set VPS=0,thenFig.1.311.5 Other Diode Types1.5.1 Solar Cell1.5.2 Photodiode1.5.3 Light-Emitting Diode(LED)1.5.4 Schottky Barrier Diode1.5.5 Zener Diode1.5 Other Diode Types1.5.1 Solar CellIt gets power from the solar arr

29、ay and can be used eitherto power an electric motor or to charge a battery pack.1.5 Other Diode Types1.5.2 PhotodiodeIt converts optical signals into electrical signals.155Mbps622Mbps2.5Gbps10Gbps40GbpsTrunk-lineMetro-coreMetro-accessData-comAccessDFB/MODCW+LockerCoaxial LD&PDAPD+ampOSA10G-APD+TIA10

30、G-PIN+TIAUncooled 10G-LD40G-PIN(R&D)Can LD1.5 Other Diode Types1.5.3 Light-Emitting Diode(LED)It converts current into light.E/O1.5 Other Diode Types1.5.4 Schottky Barrier Diode There is no minority carrier storage in the Schottky diode,so the switching time from a forward bias to a reverse bias is

31、very short compared to the pn junction diode.1.5.5 Zener Diode 1.Symbol and I-V characteristic(a)symbol(b)I-V characteristic Zener diodes can be operated in the breakdown region by limiting the current to the capabilities of the diodes.1.5.5 Zener Diode 2.ParametersVZ _ Zener breakdown voltagerZ=VZ/

32、IZ rZ _Incremental resistance IZ _ Reverse-bias current when the diode is operating in the breakdown region.3.Zener Diode Circuits Assume Zener diode VZ=5.6V,rZ=0 and IZ max=3mA,find the value of resistance.Sol:Question:1.Can we eliminate the R?Why?2.If VPS is replaced by sinusoidal input voltage vi

33、=15sinwt(V),plot output voltage vO versus vi.If VIf VI I is the sinwave,and is the sinwave,and V VomomVVZ.Z.V VOO=?=?Think about:Does the output voltage can equal 6V?Sol:Which is bigger between UO and UZ?AssumeThe output voltage cant equal 6VUO UZIf we want the output is 6V,R 4.Ideal Voltage Referen

34、ce Circuit(1)Zener diode is useful in a voltage regulator,or a constant-voltage reference circuit.(3)When IL is a max,and VPS is a min,IZ is a min.When IL is a min,and VPS is a max,IZ is a max.Due toWe obtain and(2)Ri limits Iz and drops the“excess”voltage between VPS and VZ.4.Ideal Voltage Referenc

35、e CircuitEquating these two expressions,we know VPS(min)and VPS(max),and assume IZ(min)=0.1IZ(max).Then we can determine Ri and max power rating PZ(max)of Zener diode.(page 66)Sol:from Equation(3)IL(min)=0,IL(max)=100mA,VPS=11-13.6V,VZ=9V.Design Ri and PZ(max).from Equation(2)Max power dissipated in

36、 Ri isDiode CharacteristicDiode CharacteristicIntrinsic Semiconductor Doped Semiconductor Carriers Diffusion,Drift SummaryGain a basic understanding of semiconductor material properties Two types of charged carriers Two mechanisms that generate currentsDetermine the properties of a pn junction Exami

37、ne dc analysis techniques for diode circuits using various models to describe the nonlinear diode characteristicsDevelop an equivalent circuit for a diode that is used when a small,time-varying signal is applied to a diode circuitHomework:P56 1.42P58 1.53P59 D1.611、You must sketch the circuit of the

38、 problem.2、After the second week,we submit the homework at the second lesson of each week,please submit it on time.P56 1.42Consider the circuit shown in Figure P1.42.Determine the diode current ID and diode voltage VD for(a)V=0.6V and(b)V=0.7V.First,determine if the diode is on or off.Figure P1.42P5

39、8 1.53Consider the Zener diode circuit shown in figure P1.53.The Zener breakdown voltage is VZ=5.6V at IZ=0.1mA,and the incremental Zener resistance is .rZ=10(a)Determine VO with no load .(b)Find the range in the output voltage if VPS changes by 1V.(c)Find VO if VPS=10V and .Notice:rZ 0W WFigure P1.53P59 1.53Figure P1.61Design a circuit to produce the characteristics shown in Figure P1.61,where iD is the diode current and vI is the input voltage.Assume the diode has piecewise linear parameters of V=0.7V and rf=0.Exercise：（：（not submit)P57 1.44P57 1.47P59 D1.62QuestionsandAnswers