认识Mask以及其制作流程.pptx

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1、The Role of Mask in IC Industry DESIGNMASKWAFERTESTINGASSEMBLY第1页/共26页How Does Mask Work in Wafer FAB -Stepper第2页/共26页How Does Mask Work in Wafer FAB -Scanner第3页/共26页Raw Material of Mask BlankBIM(binary mask)PSM(phase shift mask)A.KRF-PSM B.ARF-PSM第4页/共26页Size of Blank 5inch 90mil(5009)5inch 180mil(

2、5018)6inch 120mil(6012)6inch 250mil(6025)7inch 250mil(7015)What kind of mask SMIC FABs use?第5页/共26页Blank Component Binary BlankPSM BlankPhoto Resist(3K,4K,4650A)CrO&Chrome(1050A,700A)QuartzPhoto Resist(2K,3K,4KA)CrO&Chrome(1000,550A)QuartzMoSi FilmPhoto Resist Opaque Metal FilmSubstratePhoto ResistO

3、paque Metal Film Phase Shift Layer Substrate第6页/共26页Blank Qz Characteristic RigidityHeat Expansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSoda limeSilicon-BorideQuartzCoefficient9.43.70.5第7页/共26页Blank Qz Characteristic Optics CharacterTransmission(%)200300400020406080100

4、QuartzSilicon-BorideSoda LimeWave Length(nm)Thats why we choose Quartz as the substrate of blank第8页/共26页How to Transfer Design to Mask?WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1st InspectThr-InspectSTARlightShippingDevelopStripEtch第9页/共26页Front-end Process Blank configurationPhoto-resis

5、tCr filmQuartzExposurePhoto-resist developWet etchPhoto-resist stripAEIASIRe-Etch?AEI:After Etch CD measureASI:After Strip CD measureStep1Step2Step3Step4Step6Step5Step7第10页/共26页Front-end Process Dry process ResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure(EB1,EB2,EB3DUV,LB5,LB6)PEB(Post Exposure

6、 Bake)SFB2500,APB5500PAGAcid generationAcid diffusionDeprotection reactionDevelopment(SFD2500,ASP5500)H+Dry Etch(Gen3,Gen4)AEI,Re-etchStrip,ASI第11页/共26页Pellicle Component Pellicle MembraneMaterialWave LengthN.C.365nm(I-line)C.E.365,248nm(I-line,DUV)F.C.193nm(ArF)Frame(Aluminum Alloy)Adhesive TapePel

7、licle Membrane(25 um)Pellicle FrameDouble SideAdhesive TapeCrGlass第12页/共26页What Pellicle Do?Top ContaminantObject PlanePellicle FilmBottom ContaminantContaminant on Pattern PlaneLen SystemUnfocused Top Contaminant ImageUnfocused Bottom Contaminant ImageImage PlaneFocused Contaminant Image on WaferMa

8、sk PatternWafer SurfaceLight第13页/共26页Particle Immunity Control Particle size(D)V.S.Minimum Stand-off(T)T=(4M/N.A.)DT=(4M/N.A.)DM-MagnificationN.A.-Numerical Aperture of the LensFor glass side particle,T=2.3mmD1T1T2D2第14页/共26页Mask Quality Control C.D.DefectRegistration第15页/共26页CD(critical dimension)m

9、easurement第16页/共26页Defect TypeOpaque spotParticleProtrusionIntrusionContaminationPinholeMissing ARGlass fractureBreakGlass seedBridgeSolvent spotHard DefectSoft DefectMiss Size第17页/共26页How to Do Mask Defect Inspect 第18页/共26页Mask Layout Exemplification Normal S S+FiducialTest KeyTest LineMain Pattern

10、Scribe LineGlobal MarkQA CellBarcodeMulti-Chip +FiducialTest KeyTest LineScribe LineGlobal MarkQA Cell+A ChipB ChipC ChipD Chip+第19页/共26页The Principle of STARlight InspectThe Model in SMIC Mask Shop(SL3UV)can only detect pattern sideSTAR:Synchronous Trans.And Reflected第20页/共26页What is Registration 第

11、21页/共26页Registration Result Exemplification Mask:6”,t=0.25”QuartzMeasurement Area:Array:8*10Variation Quantity:nmMaxminX7.20.0Y22.00.2第22页/共26页How Does OPC Work?comparisondesign/maskWith OPCwafer第23页/共26页OPC Pattern on Mask 0.64 um Line Pattern0.25 um Serif for 0.6 um Contact0.57 Line Pattern0.27 um assistant bar for 0.72 um Line第24页/共26页Over-all flowCustomerFTPNote:Yellow box is activities customer involvedTape outMask Shop data CEJob ViewCEMask Shop data Mfg(next page)ShippingTooling informationCustomer approves JDVPIE approves JDV第25页/共26页感谢您的观看！第26页/共26页