鼎日DTU50P03规格书.pdf

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1、1P-Channel 30 V(D-S)MOSFETFEATURESTrenchFET Power MOSFETLow On-Resistance for Low Voltage DropExtended VGS max.Rating:25 V100%Rg and UIS TestedAPPLICATIONSBattery,Load and Adaptor Switches-Notebook Computers-Notebook Battery PacksNotes:a.Surface mounted on 1 x 1 FR4 board.b.t=10 s.c.Maximum under st

2、eady state conditions is 70 C/W.d.Package limited.e.The TO-252 is a leadless package.The end of the lead terminal is exposed copper(not plated)as a result of the singulation process inmanufacturing.A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate

3、bottom side solderinterconnection.f.Rework conditions:manual soldering with a soldering iron is not recommended for leadless components.PRODUCT SUMMARY VDS(V)RDS(on)()Max.ID(A)Qg(Typ.)-300.016 at VGS=-10 V-50d43.1 nC0.022 at VGS=-4.5 V-50dSGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS(TA=25 C,unless ot

4、herwise noted)ParameterSymbolLimitUnitDrain-Source Voltage VDS-30VGate-Source Voltage VGS 25Continuous Drain Current(TJ=150 C)TC=25 CID-50dATC=70 C-50dTA=25 C-23.1a,bTA=70 C-18.4a,bPulsed Drain Current(t=100 s)IDM-300Continuous Source-Drain Diode CurrentTC=25 CIS-50dTA=25 C-4.1a,bAvalanche CurrentL=

5、0.1 mHIAS-25Single-Pulse Avalanche EnergyEAS31.2mJMaximum Power DissipationTC=25 CPD48WTC=70 C31TA=25 C5a,bTA=70 C3.2a,bOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CSoldering Recommendations(Peak Temperature)e,f260THERMAL RESISTANCE RATINGSParameterSymbol Typical MaximumUnitMax

6、imum Junction-to-Ambienta,ct 10 sRthJA2125C/WMaximum Junction-to-CaseSteady State RthJC2.12.6 DTU50P03TO-252GDSTop View2Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.Stresses beyond those listed under“Absolute Maximum Ratings”may cause pe

7、rmanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect devi

8、ce reliability.SPECIFICATIONS(TJ=25 C,unless otherwise noted)ParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0,ID=-250 A-30VVDS Temperature CoefficientVDS/TJID=-250 A-22mV/CVGS(th)Temperature CoefficientVGS(th)/TJ4.1Gate-Source Threshold VoltageVGS(th)VDS=V

9、GS,ID=-250 A-1.2-2.5VGate-Source LeakageIGSSVDS=0 V,VGS=25 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-30 V,VGS=0 V-1AVDS=-30 V,VGS=0 V,TJ=55 C-5On-State Drain CurrentaID(on)VDS -10 V,VGS=-10 V-30ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-15 A 0.0120.016VGS=-4.5 V,ID=-10 A 0.0180.022F

10、orward Transconductanceagfs VDS=-10 V,ID=-15 A 60SDynamicbInput CapacitanceCiss VDS=-15 V,VGS=0 V,f=1 MHz5125pFOutput CapacitanceCoss 615Reverse Transfer CapacitanceCrss 554Total Gate ChargeQg VDS=-15 V,VGS=-10 V,ID=-10 A90135nCVDS=-15 V,VGS=-4.5 V,ID=-10 A43.165Gate-Source ChargeQgs 13.6Gate-Drain

11、ChargeQgd 28.8Gate ResistanceRgf=1 MHz0.52.44.8Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VGEN=-10 V,Rg=1 1530nsRise Timetr1224Turn-Off DelayTimetd(off)58110Fall Timetf1224Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VGEN=-4.5 V,Rg=1 60120Rise Timetr60120Turn-Off DelayTimetd(off)52100Fal

12、l Timetf2652Drain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentISTC=25 C-50APulse Diode Forward Current(100 s)ISM-300Body Diode VoltageVSDIS=-3 A,VGS=0-0.74-1.20VBody Diode Reverse Recovery TimetrrIF=-10 A,dI/dt=100 A/s,TJ=25 C2346nsBody Diode Reverse Recovery ChargeQrr1224nC

13、Reverse Recovery Fall Timeta9nsReverse Recovery Rise Timetb14 DTU50P033TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Output CharacteristicsOn-Resistance vs.Drain CurrentGate Charge0 30 60 90 120 150 0.0 1.0 2.0 3.0 4.0 5.0 ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)VGS=3 VVGS=4 V VGS=10

14、V thru 5 V VGS=2 V0.0000 0.010 0.020 0.030 0.040 0.050 0 20 40 60 80 100 RDS(on)-On-Resistance()ID-Drain Current(A)VGS=4.5 V VGS=10 V 0 2 4 6 8 10 020406080 100 VGS-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VDS=15 V VDS=20 V VDS=10 V ID=10 A Transfer CharacteristicsCapacitanceOn-Resistance vs

15、.Junction Temperature0 30 60 90 120 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 ID-Drain Current(A)VGS-Gate-to-Source Voltage(V)TC=25 C TC=125 C TC=-55 C0 1400 2800 4200 5600 7000 0 4 8 12 16 20 C-Capacitance(pF)VDS-Drain-to-Source Voltage(V)Ciss Coss Crss0.6 0.8 1.0 1.2 1.4 1.6 -50-25 0 25 50 75 100 125 150 RD

16、S(on)-On-Resistance(Normalized)TJ-Junction Temperature(C)ID=15 A VGS=10 V VGS=4.5 V DTU50P034TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Source-Drain Diode Forward VoltageThreshold Voltage0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IS-Source Current(A)VSD-Source-to-Drain Voltage(V)TJ

17、=150 C TJ=25 C-0.4-0.2 0.20 0.4 0.6 0.8-50-25 0 25 50 75 100 125 150 VGS(th)-Variance(V)TJ-Temperature(C)ID=250 A ID=1 mA On-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-Ambient0.000 0.016 0.022 0.028 0.034 0.040 0246810RDS(on)-On-Resistance()VGS-Gate-to-Source Voltage(V)TJ=125

18、 C TJ=25 C ID=15 A 0 50 100 150 200 250 0.0010.010.1110Power(W)Time(s)Safe Operating Area0.01 0.1 1 10 100 1000 0.010.1110100ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specified 100 s 100 ms Limited by RDS(on)*1 ms IDM Limited TA=25 C Single Pulse BVDSS Limi

19、ted 10 ms 10 s 1 s DC ID Limited DTU50P035TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)*The power dissipation PD is based on TJ(max.)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is

20、used to determine the current rating,when this rating falls below the packagelimit.Current Derating*0 18 36 54 72 90 0 25 50 75 100 125 150 ID-Drain Current(A)TC-Case Temperature(C)Limited by Package Power,Junction-to-Case0 12 24 36 48 60 0 25 50 75 100 125 150 Power(W)TC-Case Temperature(C)Power De

21、rating,Junction-to-Ambient0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 Power(W)TA-Ambient Temperature(C)DTU50P036TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Normalized Thermal Transient Impedance,Junction-to-Ambient0.01 0.1 1 0.00010.0010.010.11101001000Normalized Effective Transient Therm

22、al Impedance Square Wave Pulse Duration(s)Duty Cycle=0.5 0.2 0.1 0.05 0.02 Single Pulse t1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=70 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedNormalized Thermal Transient Impedance,Junction-to-Case0.01 0.1 1 0.00010.0010.010.1110Normalized Effective Transie

23、nt Thermal Impedance Square Wave Pulse Duration(s)Duty Cycle=0.5 0.2 0.1 0.05 0.02 Single Pulse DTU50P031TO-252AA CASE OUTLINENoteDimension L3 is for reference only.L3DL4L5bb2e1E1D1CA1gage plane height(0.5 mm)eb3EC2ALHMILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A2.182.380.0860.094A1-0.127-0.005b0.640.880.0

24、250.035b20.761.140.0300.045b34.955.460.1950.215C0.460.610.0180.024C20.460.890.0180.035D5.976.220.2350.245D15.21-0.205-E6.356.730.2500.265E14.32-0.170-H9.4010.410.3700.410e2.28 BSC0.090 BSCe14.56 BSC0.180 BSCL1.401.780.0550.070L30.891.270.0350.050L4-1.02-0.040L51.141.520.0450.060ECN:X12-0247-Rev.M,24-Dec-12DWG:5347Package Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK(TO-252)0.420(10.668)Recommended Minimum PadsDimensions in Inches/(mm)0.224(5.690)0.180(4.572)0.055(1.397)0.243(6.180)0.087(2.202)0.090(2.286)Application Note