MC3440DV规格书.pdf
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1、1These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on)and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers,PCMCIA card
2、s,cellular and cordless telephones.VDS(V)rDS(on)()ID(A)0.700 VGS=10 V1.11.200 VGS=5.5V0.8PRODUCT SUMMARY150N-Channel 150V(D-S)MOSFETLow rDS(on)provides higher efficiency and extends battery lifeLow thermal impedance copper leadframeTSOP-6 saves board spaceFast switching speedHigh performance trench
3、technologyNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width limited by maximum junction temperatureSymbol Maximum UnitsVDS150VGS20Continuous Drain CurrentaTA=25oCID1.1IDM10IS1.1APower DissipationaTA=25oCPD1.15WTJ,Tstg-55 to 150oCOperating Junction and Storage Temperature RangeContinuous Source
4、 Current(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageASymbolTypMaxt=10 sec93110Steady State130150THERMAL RESISTANCE RATINGSMaximum Junction-to-AmbientaoC/WRthJAParameterTSOP-6Top ViewDDSDDG123654D1S1
5、G1N-Channel MOSFETF Si 34 4 0DV/MC34 4 0DV2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxGate-Threshold VoltageVGS(th)VDS=VGS,ID=250 uA1.0VGate-Body LeakageIGSSVDS=0 V,VGS=8 V100nAVDS=120 V,VGS=0 V1VDS=120 V,VGS=0 V,TJ=55oC10On-State Drain
6、 CurrentAID(on)VDS=5 V,VGS=10 V10AVGS=10 V,ID=1.1 A700VGS=5.5 V,ID=0.8 A1200Forward TranconductanceAgfsVDS=10 V,ID=1.1 A11.3SDiode Forward VoltageVSDIS=1.6 A,VGS=0 V0.75VTotal Gate ChargeQg7.0Gate-Source ChargeQgs1.1Gate-Drain ChargeQgd2.0Turn-On Delay Timetd(on)8Rise Timetr24Turn-Off Delay Timetd(o
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