MC2306DS规格书.pdf

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1、1These miniature surface mount MOSFETs utilize High Cell Density process.Low rDS(on)assures minimal power loss and conserves energy,making this device ideal for use in power management circuitry.Typical applications are PWMDC-DC converters,power management in portable and battery-powered products su

2、ch as computers,printers,battery charger,telecommunication power system,and telephones power system.VDS(V)rDS(on)m()ID(A)58 VGS=10V3.582 VGS=4.5V3.0PRODUCT SUMMARY30N-Channel 30-V(D-S)MOSFETLow rDS(on)Provides Higher Efficiency and Extends Battery LifeMiniature SOT-23 Surface Mount Package Saves Boa

3、rd SpaceHigh power and current handling capabilityLow side high current DC-DC Converter applicationsNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width limited by maximum junction temperatureSymbolLimitUnitsVDS30VGS20TA=25oC3.5TA=70oC2.8IDM16IS1.25ATA=25oC1.3TA=70oC0.8TJ,Tstg-55 to 150oCContinuo

4、us Source Current(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageContinuous Drain CurrentaIDAPower DissipationaPDOperating Junction and Storage Temperature RangeWSymbolMaximumUnitst=10 sec100oC/WSteady-

5、State166oC/WTHERMAL RESISTANCE RATINGSParameterMaximum Junction-to-AmbientaRJADSGSi 2306DS/MC2306DS F 2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxGate-Threshold VoltageVGS(th)VDS=VGS,ID=250 uA1VGate-Body LeakageIGSSVDS=0 V,VGS=20 V100nA

6、VDS=24 V,VGS=0 V1VDS=24 V,VGS=0 V,TJ=55oC25On-State Drain CurrentAID(on)VDS=5 V,VGS=10 V6AVGS=10 V,ID=3.5 A58VGS=4.5 V,ID=3 A82Forward TranconductanceAgfsVDS=15 V,ID=3.5 A6.9SDiode Forward VoltageVSDIS=2.3 A,VGS=0 V0.8VTotal Gate ChargeQg2.2Gate-Source ChargeQgs0.5Gate-Drain ChargeQgd0.8Turn-On Dela

7、y Timetd(on)16Rise Timetr5Turn-Off Delay Timetd(off)23Fall-Timetf3Drain-Source On-ResistanceArDS(on)mParameterLimitsUnitVDD=25 V,RL=25 ,ID=1 A,VGEN=10 VnSVDS=15 V,VGS=4.5 V,ID=3.5 AnCDynamicbuAIDSSZero Gate Voltage Drain CurrentStaticTest ConditionsSymbolFREESCALE reserves the right to make changes

8、without further notic e to any products herein.freescale makes no warranty,representation or guarantee regarding the suitability of its products for any particular purpose,nor does freescale assume any liability arising ou t of the application or use of any product or circuit,and specifically discla

9、ims any and all liability,including without limitation special,consequential or incidental damages.“Typical”parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.All operating parameters,inc

10、luding“Typicals”must be validated for each customer application by customers technical experts.freescale does not convey any license under its patent rights nor the rights of others.freescale products are not designed,intended,or authorized for use as components in systems intended for surgical impl

11、ant into the body,or other applications intended to support or sustain life,or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.Should Buyer purchase or use freescale products for any such unintended or unauthor

12、ized application,Buyer shall indemnify and hold freescaleand its officers,employees,subsidiaries,affiliates,and distributors harmless against all claims,costs,damages,and expenses,and reasonable attorney fees arising out of,directly or indirectly,any claim of personal injury or death associated with

13、 such unintended or unauthorized use,even if such claim alleges that freescale was negligent regarding the design or manufacture of the part.freescale is an Equal Opportunity/Affirmative Action Employer.Si 2306DS/MC2306DS F 30510152025300.51.52.53.54.5VGS,GATE TO SOURCE VOLTAGE(V)ID,DRAIN CURRENT(A)

14、TA=-55oC25oC125oCVDS=5VTypical Electrical Characteristics(N-Channel)0.60.81.01.21.41.6-50-250255075100125150TJ篊 Juncation Temperature()Normalized RDS(on)VGS=10VID=7AFigure 1.On-Region CharacteristicsFigure 2.Body Diode Forward Voltage Variationwith Source Current and Temperature Figure 6.On-Resistan

15、ce Variation with TemperatureFigure 5.Gate Charge Characteristics Figure 4.Capacitance Characteristics Figure 3.On Resistance Vs Vgs Voltage 010203040012345VDS,DRAIN-SOURCE VOLTAGE(V)ID,D R A IN C U R R E N T (A4.0V3.0VVGS=10V5.0V6.0V0.511.522.53051015202530ID,DRAIN CURRENT(A)RD S(O N),N O R M A L I

16、Z E DD R A IN-S O U R C E O N-R E S IS T A N CVGS=10V4.5V0100200300400500600700051015202530VDS,DRAIN TO SOURCE VOLTAGE(V)C A P A C IT A N C E (p FCISSCRSSCOSSf=1MHzVGS=0 V0246810012345Qg,Gate Charge(nC)Vgs Voltage(V)Si 2306DS/MC2306DS F 40.00010.0010.010.111010000.20.40.60.811.21.4VSD,BODY DIODE FOR

17、WARD VOLTAGE(V)IS,REVERSE DRAIN CURRENT(A)TA=125oC25oCVGS=0V11.21.41.61.822.2-50-250255075100125150175TA,AMBIENT TEMPERATURE(oC)-Vth,GATE-SOURCE THRESTHOLDVOLTAGE(V)VDS=VGSID=-250mA010203040500.0010.010.1110100t1,TIME(SEC)P(pk),PEAK TRANSIENT POWER(W)SINGLE PULSERqJA=125oC/WTA=25oC0.0010.010.110.000

18、10.0010.010.11101001000t1,TIME(sec)SINGLE P ULSE0.010.020.00.10.2D=0.5RqJA(t)=r(t)+RqJARqJA=125oC/WTJ-TA=P*RqJA(t)Duty Cycle,D=t1/t2P(pk)t1t2Typical Electrical Characteristics(N-Channel)Figure 11.Transient Thermal Response CurveFigure 10.Single Pulse Maximum Power Dissipation Figure 9.Vth Gate to So

19、urce Voltage Vs Temperature Figure 7.Transfer CharacteristicsFigure 8.On-Resistance with Gate to Source VoltageNormalized Thermal Transient Junction to Ambient00.020.040.060.080.1246810VGS,GATE TO SOURCE VOLTAGE(V)RD S(O N),O N-R E S IS T A N C E (O H M)TA=25oCSi 2306DS/MC2306DS F 5Package InformationSi 2306DS/MC2306DS F 6Ordering information AM2306N-T1-XX A:Analog Power M:MOSFET 2306:Part number N:N-Channel T1:Tape&reel XX:Blank:StandardPF:LeadfreeSi 2306DS/MC2306DS F