MC2303DS规格书.pdf

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1、1These miniature surface mount MOSFETs utilize High Cell Density process.Low rDS(on)assures minimal power loss and conserves energy,making this device ideal for use in power management circuitry.Typical applications are voltage control small signal switch,power management in portable and battery-pow

2、ered products such as computer portable electronics and other battery power application.P-Channel Logic Level MOSFETLow rDS(on)Provides Higher Efficiency and Extends Battery LifeFast SwitchLow Gate ChargeMiniature SOT-23 Surface Mount Package Saves Board SpaceNotesa.Surface Mounted on 1”x 1”FR4 Boar

3、d.b.Pulse width limited by maximum junction temperatureSymbolMaximumUnitst=5 sec250Steady-State285THERMAL RESISTANCE RATINGSParameteroC/WMaximum Junction-to-AmbientaRTHJADSGSymbol Maximum UnitsVDS-30VGS20TA=25oC-2.1TA=70oC-1.7IDM10IS-0.4ATA=25oC1.25TA=70oC0.8TJ,Tstg-55 to 150oCContinuous Source Curr

4、ent(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageContinuous Drain CurrentaIDAPower DissipationaPDOperating Junction and Storage Temperature RangeWVDS(V)rDS(on)()ID(A)0.20 VGS=-10 V-2.10.30 VGS=-4.5V-1

5、.7-30PRODUCT SUMMARYSi 2303DS/MC2303DS F 2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxVDS=-24 V,VGS=0 V-1VDS=-24 V,VGS=0 V,TJ=55oC-10Gate-Body LeakageIGSSVDS=0 V,VGS=20 V100nAGate-Threshold VoltageVGS(th)VDS=VGS,ID=-250 uA-1.30VOn-State

6、Drain CurrentAID(on)VDS=-5 V,VGS=-4.5 V-3AVGS=-10 V,ID=-2.1 A 0.20VGS=-4.5 V,ID=-1.7 A 0.30Forward TranconductanceAgfsVDS=-5 V,ID=-2.1 A2SDiode Forward VoltageVSDIS=-0.4 A,VGS=0 V-0.70-1.2VTotal Gate ChargeQg3.4Gate-Source ChargeQgs0.8Gate-Drain ChargeQgd1.5Turn-On Delay Timetd(on)8Rise Timetr18Turn

7、-Off Delay Timetd(off)52Fall-Timetf39SPECIFICATIONS(TA=25oC UNLESS OTHERWISE NOTED)StaticTest ConditionsZero Gate Voltage Drain CurrentIDSSASymbolParameterLimitsnCVDS=-10 V,ID=-1.1 A,RG=50,VGEN=-10 VUnitDrain-Source On-ResistanceArDS(on)nsDynamicbVDS=-10 V,VGS=-5 V,ID=-2.1 AFREESCALE reserves the ri

8、ght to make changes without further notic e to any products herein.freescale makes no warranty,representation or guarantee regarding the suitability of its products for any particular purpose,nor does freescale assume any liability arising ou t of the application or use of any product or circuit,and

9、 specifically disclaims any and all liability,including without limitation special,consequential or incidental damages.“Typical”parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.All oper

10、ating parameters,including“Typicals”must be validated for each customer application by customers technical experts.freescale does not convey any license under its patent rights nor the rights of others.freescale products are not designed,intended,or authorized for use as components in systems intend

11、ed for surgical implant into the body,or other applications intended to support or sustain life,or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.Should Buyer purchase or use freescale products for any such un

12、intended or unauthorized application,Buyer shall indemnify and hold freescaleand its officers,employees,subsidiaries,affiliates,and distributors harmless against all claims,costs,damages,and expenses,and reasonable attorney fees arising out of,directly or indirectly,any claim of personal injury or d

13、eath associated with such unintended or unauthorized use,even if such claim alleges that freescale was negligent regarding the design or manufacture of the part.freescale is an Equal Opportunity/Affirmative Action Employer.Si 2303DS/MC2303DS F 3Typical Electrical CharacteristicsFigure 1.On-Region Ch

14、aracteristicsFigure 2.On-Resistance Variation with Drain Current and Gate VoltageFigure 3.On-Resistance Variationwith TemperatureFigure 4.On-Resistance Variation withGate to Source VoltageFigure 5.Transfer CharacteristicsFigure 6.Body Diode Forward VoltageVariation with Source Current andTemperature

15、 Si 2303DS/MC2303DS F 4Typical Electrical CharacteristicsNormalized Thermal Transient Impedance,Junction to Ambient Figure 11.Transient Thermal Response CurveFigure 9.Capacitance CharacteristicFigure 10.Gate Charge CharacteristicSi 2303DS/MC2303DS F 5Typical Electrical CharacteristicsFigure 12.Transconductance Variation With Current&TemperatureFigure 13.Maximum Safe Operation AreaFigure 14.SOT-3 Maximum Steady-State Variation Power Dissipation versus Copper Pad AreaFigure 15.Maximum State-State Drain Current Versus Copper Pad AreaSi 2303DS/MC2303DS F 6Package InformationSi 2303DS/MC2303DS F