DTM4830规格书最新版.pdf

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1、SymbolVDSVGSIDMIAREARTJ,TSTGSymbolTypMax4862.57490RJL3240ARepetitive avalanche energy L=0.1mH C12.8mJAvalanche Current C16Pulsed Drain Current CContinuous DrainCurrentTA=25 CTA=70 CJunction and Storage Temperature Range-55 to 150 CThermal Characteristicst 10s C/WParameterRJAUnitsMaximum Junction-to-

2、Ambient AVV30Gate-Source VoltageDrain-Source Voltage80MaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise notedAID3.52.918Power Dissipation BPDW2TA=25 C1.3TA=70 CMaximum Junction-to-Lead Steady-State C/WSteady-State C/WMaximum Junction-to-Ambient A DG2D2S2G1D1S1PRODUCT SUMMARY VDS

3、(V)RDS(on)()ID(A)aQg(Typ.)800.075 at VGS=10 V 3.57.3 nCSO-8 5 6 7 8 Top View 2 3 4 1 FEATURESHalogen-free According to IEC 61249-2-21Definition TrenchFET Power MOSFET100%Rg and UIS TestedCompliant to RoHS Directive 2002/95/ECAPPLICATIONSDC/DC Conversion-Notebook System PowerN-Channel 80 V(D-S)MOSFET

4、S1G1S2G2D1D1D2D2 DTM48302 3 5 5 3 Q 6 8 8 7 2 黄R 1 3 7 6 0 3 2 电5 0 7 0SymbolMinTypMaxUnitsBVDSS80VVDS=80V,VGS=0V1TJ=55 C5IGSS100nAVGS(th)Gate Threshold Voltage3.54.25VID(ON)18A6275TJ=125 C113.0135gFS15SVSD0.771VIS2.5AISM18ACiss510640770pFCoss284052pFCrss122030pFRg0.91.82.7Qg(10V)81113nCQg(4.5V)45.5

5、7Qgs456nCQgd0.71.21.7nCtD(on)7.2nstr2.2nstD(off)17nstf2nstrr142026nsQrr355065nCBody Diode Reverse Recovery ChargeIF=3.5A,dI/dt=300A/sPulsed Body-diode CurrentCInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise TimeTurn-Off DelayTimeVGS=10V,VDS=40V,RL=8,RGEN=3Gate resi

6、stanceVGS=0V,VDS=0V,f=1MHzTurn-Off Fall TimeTotal Gate ChargeVGS=10V,VDS=40V,ID=3.5AGate Source ChargeGate Drain ChargeTotal Gate ChargeSWITCHING PARAMETERSmIS=1A,VGS=0VVDS=5V,ID=3.5AForward TransconductanceDiode Forward VoltageRDS(ON)Static Drain-Source On-ResistanceElectrical Characteristics(TJ=25

7、 C unless otherwise noted)STATIC PARAMETERSParameterConditionsIDSSAVDS=VGS ID=250AVDS=0V,VGS=30VZero Gate Voltage Drain CurrentGate-Body leakage currentMaximum Body-Diode Continuous CurrentBody Diode Reverse Recovery TimeDrain-Source Breakdown VoltageOn state drain currentID=250A,VGS=0VVGS=10V,VDS=5

8、VVGS=10V,ID=3.5AReverse Transfer CapacitanceIF=3.5A,dI/dt=300A/sVGS=0V,VDS=40V,f=1MHzA.The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper,in a still air environment with TA=25 C.Thevalue in any given application depends on the users specific board design.B.The po

9、wer dissipation PD is based on TJ(MAX)=150 C,using 10s junction-to-ambient thermal resistance.C.Repetitive rating,pulse width limited by junction temperature TJ(MAX)=150 C.Ratings are based on low frequency and duty cycles to keepinitialTJ=25 C.D.The RJA is the sum of the thermal impedence from junc

10、tion to lead RJL and lead to ambient.E.The static characteristics in Figures 1 to 6 are obtained using 300s pulses,duty cycle 0.5%max.F.These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with DTM4830TYPICAL ELECTRICAL AND

11、THERMAL CHARACTERISTICS1752100184004812162034567VGS(Volts)Figure 2:Transfer Characteristics(Note E)ID(A)5060708090100048121620ID(A)Figure 3:On-Resistance vs.Drain Current andGate Voltage(Note E)RDS(ON)(m )1.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+011.0E+020.00.20.40.60.81.01.2VSD(Volts)Figure 6

12、:Body-Diode Characteristics(Note E)IS(A)25C125C0.811.21.41.61.822.20255075100125150175Temperature(C)Figure 4:On-Resistance vs.JunctionTemperature(Note E)Normalized On-ResistanceVGS=10VID=3.5A50709011013015048121620VGS(Volts)Figure 5:On-Resistance vs.Gate-Source Voltage(Note E)RDS(ON)(m )25C125CVDS=5

13、VVGS=10VID=3.5A25C125C048121620012345VDS(Volts)Fig 1:On-Region Characteristics(Note E)ID(A)6V7V 10V5.5V5V DTM4830TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0246810024681012Qg(nC)Figure 7:Gate-Charge CharacteristicsVGS(Volts)02004006008001000020406080VDS(Volts)Figure 8:Capacitance CharacteristicsC

14、apacitance(pF)CissCossCrssVDS=40VID=3.5A0.00.11.010.0100.00.1110100VDS(Volts)ID(Amps)Figure 9:Maximum Forward Biased SafeOperating Area(Note F)10s10s1msDCRDS(ON)limitedTJ(Max)=150 CTA=25 C100s11010010000.000010.0010.1101000Pulse Width(s)Figure 10:Single Pulse Power Rating Junction-to-Ambient(Note F)

15、Power(W)TA=25C10ms100ms1101000.0000010.000010.0001Time in avalanche,tA(s)Figure 12:Single Pulse Avalanche capabilityID(A),Peak Avalanche Current10ms100mTA=25CTA=150CTA=100CTA=125C DTM4830TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0.010.11100.000010.00010.0010.010.11101001000Pulse Width(s)Figure 1

16、1:Normalized Maximum Transient Thermal Impedance(Note F)Z JA Normalized TransientThermal ResistanceSingle PulseD=Ton/TTJ,PK=TA+PDM.ZJA.RJATonTPDIn descending orderD=0.5,0.3,0.1,0.05,0.02,0.01,single pulseRJA=90C/W DTM48301DIMMILLIMETERSINCHESMinMaxMinMaxA1.351.750.0530.069A10.100.200.0040.008B0.350.

17、510.0140.020C0.190.250.00750.010D4.805.000.1890.196E3.804.000.1500.157e1.27 BSC0.050 BSCH5.806.200.2280.244h0.250.500.0100.020L0.500.930.0200.037q0808S0.440.640.0180.026ECN:C-06527-Rev.I,11-Sep-06DWG:549843125687HEh x 45CAll Leadsq0.101 mm0.004LBA1AeD0.25 mm(Gage Plane)SOIC(NARROW):8-LEADJEDEC Part Number:MS-012SPackage Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-80.246(6.248)Recommended Minimum PadsDimensions in Inches/(mm)0.172(4.369)0.152(3.861)0.047(1.194)0.028(0.711)0.050(1.270)0.022(0.559)Return to IndexReturn to IndexApplication Note