MC3586DV规格书.pdf
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1、1These miniature surface mount MOSFETsutilize a high cell density trench process to provide low rDS(on)and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers,PCMCIA cards
2、,cellular and cordless telephones.N&P-Channel 20-V(D-S)MOSFETLow rDS(on)provides higher efficiency and extends battery lifeLow thermal impedance copper leadframeTSOP-6 saves board spaceFast switching speedHigh performance trench technologyNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width limit
3、ed by maximum junction temperatureSymbol N-Channel P-Channel UnitsVDS20-20VGS88TA=25oC4.1-3.2TA=70oC3.3-2.6IDM8-8IS1.05-1.05ATA=25oCTA=70oCTJ,TstgoCContinuous Source Current(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageD
4、rain-Source VoltageContinuous Drain CurrentaIDAPower DissipationaPDOperating Junction and Storage Temperature RangeW1.150.7-55 to 150TypMaxTypMaxt=10 sec9311093110Steady State130150130150Maximum Junction-to-AmbientaoC/WUnitP-ChannelN-ChannelRthJATHERMAL RESISTANCE RATINGSParameterSymbolS2D2G2P-Chann
5、el MOSFETD1S1G1N-Channel MOSFETTSOP-6Top ViewD1S1D2G1S2G2123654VDS(V)rDS(on)()ID(A)0.047 VGS=4.5V4.10.055 VGS=2.5V3.80.079 VGS=-4.5V-3.20.110 VGS=-2.5V-2.720PRODUCT SUMMARY-20F Si 358 6DV/MC358 6DV2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.ChMi
6、nTypMaxVGS=VDS,ID=250 uAN0.4VGS=VDS,ID=-250 uAP-0.4VDS=0 V,VGS=8 VN100VDS=0 V,VGS=-8 VP-100VDS=16 V,VGS=0 VN1VDS=-16 V,VGS=0 VP-1VDS=16 V,VGS=0 V,TJ=55oCN10VDS=-16 V,VGS=0 V,TJ=55oCP-10VDS=5 V,VGS=4.5 VN5VDS=-5 V,VGS=-4.5 VP-5VGS=4.5 V,ID=4.1 AN0.047VGS=-4.5 V,ID=-3.2 AP0.079VGS=2.5 V,ID=3.8 AN0.055
7、VGS=-2.5 V,ID=-2.7 AP0.110VDS=5 V,ID=4.1 AN10VDS=-5 V,ID=-3.2 AP5IS=1.05 A,VGS=0 VN0.80IS=-1.05 A,VGS=0 VP-0.83N7.5P3.8N0.6P0.6N1.0P1.5N5P5N12P15N13P20N7P20Forward TranconductanceAgfsSGate-Source ChargeQgsADrain-Source On-ResistanceArDS(on)nSN-Chaneel VDD=15V,VGS=4.5V,ID=1A ,RGEN=15,P-Channel VDD=-1
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