鼎日DTM4425规格书.pdf

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1、1P-Channel 30-V(D-S)MOSFETFEATURESHalogen-free According to IEC 61249-2-21DefinitionTrenchFET Power MOSFET100%Rg TestedAPPLICATIONSLoad Switches-Notebook PCs-Desktop PCsPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)aQg(Typ.)-300.0088 at VGS=10 V-1527 nC0.0105 at VGS=4.5 V-13.7SO-8SDSDSDGD5678Top View2341SGDP-

2、Channel MOSFET Notes:a.Based on TC=25 C.b.Surface Mounted on 1 x 1 FR4 board.c.t=10 s.d.Maximum under Steady State conditions is 85 C/W.ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise notedParameterSymbol Limit UnitDrain-Source Voltage VDS-30VGate-Source Voltage VGS 20Continuous Drain Current(TJ=1

3、50 C)TC=25 CID-15ATC=70 C-12.7TA=25 C-13b,cTA=70 C-10.4b,cPulsed Drain CurrentIDM-50Continous Source-Drain Diode CurrentTC=25 CIS-4.7TA=25 C-2.1b,cMaximum Power DissipationTC=25 CPD5.7WTC=70 C3.6TA=25 C2.5b,cTA=70 C1.6b,cOperating Junction and Storage Temperature RangeTJ,Tstg-55 to 150CTHERMAL RESIS

4、TANCE RATINGS ParameterSymbolTypicalMaximumUnitMaximum Junction-to-Ambientb,dt 10 sRthJA3550C/WMaximum Junction-to-Foot(Drain)Steady StateRthJF1822 DTM44252Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.Stresses beyond those listed under“A

5、bsolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions

6、for extended periods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-30VVDS Temperature CoefficientVDS/TJID=-250 A-20mV/CVGS(th)Temperature CoefficientVGS(th)/TJ4.9Gate

7、-Source Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1.2-2.5VGate-Source LeakageIGSSVDS=0 V,VGS=20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-30 V,VGS=0 V-1AVDS=-30 V,VGS=0 V,TJ=55 C-5On-State Drain CurrentaID(on)VDS -5 V,VGS=-10 V-30ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-13 A 0.008

8、10.0088VGS=-4.5 V,ID=-10 A 0.00970.0105Forward TransconductanceagfsVDS=-15 V,ID=-13 A 40SDynamicbInput CapacitanceCiss VDS=-15 V,VGS=0 V,f=1 MHz2610pFOutput CapacitanceCoss 460Reverse Transfer CapacitanceCrss 395Total Gate ChargeQg VDS=-15 V,VGS=-10 V,ID=-13 A5380nCVDS=-15 V,VGS=-4.5 V,ID=-13 A2741G

9、ate-Source ChargeQgs 8Gate-Drain ChargeQgd13Gate ResistanceRgf=1 MHz0.42.14.2Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VGEN=-4.5 V,Rg=1 5278nsRise Timetr 4162Turn-Off Delay Timetd(off)3654Fall Timetf1525Turn-On Delay Timetd(on)VDD=-15 V,RL=1.5 ID -10 A,VGEN=-10 V,Rg=1 1220Rise Timetr 915Turn

10、-Off Delay Timetd(off)4263Fall Timetf915Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C-4.7APulse Diode Forward CurrentISM-50Body Diode VoltageVSDIS=-10 A,VGS=0 V-0.8-1.2VBody Diode Reverse Recovery TimetrrIF=-10 A,dI/dt=100 A/s,TJ=25 C2030nsBody Diode Reverse R

11、ecovery ChargeQrr1020nCReverse Recovery Fall Timeta10nsReverse Recovery Rise Timetb9 DTM44253TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsOn-Resistance vs.Drain CurrentGate Charge010203040500.00.51.01.52.0VGS=10 V thru 4 VVGS=3 VVDS-Drain-to-Source Voltage(V)-Drain Curren

12、t(A)ID0.0000.0050.0100.0150.02001020304050VGS=10 VVGS=4.5 V-On-Resistance()RDS(on)ID-Drain Current(A)02468100102030405060ID=13 AVDS=24 VVDS=15 V-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VGSTransfer CharacteristicsCapacitanceOn-Resistance vs.Junction Temperature0.00.51.01.52.001234TC=25 CTC=1

13、25 CTC=-55 CVGS-Gate-to-Source Voltage(V)-Drain Current(A)IDCrss01000200030004000051015202530CissCossVDS-Drain-to-Source Voltage(V)C-Capacitance(pF)0.60.91.21.51.8-50-250255075100125150ID=13 AVGS=4.5 VVGS=10 VTJ-Junction Temperature(C)(Normalized)-On-ResistanceRDS(on)DTM44254TYPICAL CHARACTERISTICS

14、25 C,unless otherwise notedSource-Drain Diode Forward VoltageThreshold Voltage0.11101000.00.20.40.60.81.01.2TJ=150 CTJ=25 CVSD-Source-to-Drain Voltage(V)-Source Current(A)IS1.01.31.61.92.2-50-250255075100125150ID=250 A(V)VGS(th)TJ-Temperature(C)On-Resistance vs.Gate-to-Source VoltageSingle Pulse Pow

15、er(Junction-to-Ambient)0.000.010.020.030.040246810TJ=25 CTJ=125 C-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)020406080100011100.00.01Time(s)Power(W)0.1Safe Operating Area,Junction-to-Ambient10010.11101000.01100.1TA=25 CSingle Pulse100 ALimited by RDS(on)*BVDSS Limited1 ms10 ms100 ms1 s10 sDC

16、VDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specified-Drain Current(A)ID DTM44255TYPICAL CHARACTERISTICS 25 C,unless otherwise noted*The power dissipation PD is based on TJ(max)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation l

17、imit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Current Derating*048121620240255075100125150TC-Case Temperature(C)ID-Drain Current(A)Power,Junction-to-Case024680255075100125150TC-Case Temperature(C)Power(W)P

18、ower,Junction-to-Ambient0.00.30.60.91.21.51.80255075100125150TA-Ambient Temperature(C)Power(W)DTM44256TYPICAL CHARACTERISTICS 25 C,unless otherwise notedNormalized Thermal Transient Impedance,Junction-to-Ambient0.20.1t1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=85 C/W3.TJM-TA=PDMZthJA(t)t1t24.S

19、urface MountedDuty Cycle=0.5Single Pulse0.020.0510-310-2110100010-110-4100Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance0.10.011Normalized Thermal Transient Impedance,Junction-to-Foot10-310-201110-110-40.20.1Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effectiv

20、e TransientThermal Impedance10.10.010.050.02Single Pulse DTM44251DIMMILLIMETERSINCHESMinMaxMinMaxA1.351.750.0530.069A10.100.200.0040.008B0.350.510.0140.020C0.190.250.00750.010D4.805.000.1890.196E3.804.000.1500.157e1.27 BSC0.050 BSCH5.806.200.2280.244h0.250.500.0100.020L0.500.930.0200.037q0808S0.440.

21、640.0180.026ECN:C-06527-Rev.I,11-Sep-06DWG:549843125687HEh x 45CAll Leadsq0.101 mm0.004LBA1AeD0.25 mm(Gage Plane)SOIC(NARROW):8-LEADJEDEC Part Number:MS-012SPackage Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-80.246(6.248)Recommended Minimum PadsDimensions in Inches/(mm)0.172(4.369)0.152(3.861)0.047(1.194)0.028(0.711)0.050(1.270)0.022(0.559)Return to IndexReturn to IndexApplication Note