A2SHB 规格书-PL2302.pdf

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1、 PL2302GD 1 PRODUCT SUMMARY VDSS ID RDS(on)(m-ohm)Max 20V 3.0 65 VGS=4.5V 2.0 90 VGS=2.5V Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V Drain Current-Continuousa TA=25 C b ID 3 A IDM 9 A a Drain-Source Diode Forward Current IS 1 A Maximum Power Dissipation a

2、TA=25 C PD 1.25 W TA=75 C 0.75 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 C N-Channel High Density Trench MOSFET FEATURES Super high dense cell trench design for low RDS(on).Rugged and reliable.Surface Mount package.D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS(TA=25 C unless

3、otherwise noted)-Pulse THERMAL CHARACTERISTICS a Thermal Resistance,Junction-to-Ambient RthJA 100 C/W Note a.Surface Mounted on FR4 Board,t 10sec.b.Pulse width limited by maximum junction temperature.2 ELECTRICAL CHARACTERISTICS(TA=25 C unless otherwise noted)Parameter Symbol Condition Min Typc Max

4、Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 uA Gate-Body Leakage IGSS VGS=8V,VDS=0V 10 uA b ON CHARACTERISTICS Gate Threshold Voltage VGS(th)VDS=VGS,ID=250uA 0.5 0.7 1 V Drain-Source On-State Resistance RDS(

5、on)VGS=4.5V,ID=2.8A 50 65 m-ohm VGS=2.5V,ID=2.0A 65 90 Forward Transconductance gfs VDS=5V,ID=4A 10.7 S DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VSD VGS=0V,IS=1.7A 1.2 V c DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=6V,VGS=0V f=1.0MHz 457 pF Output Capacitance COSS 119 pF Re

6、verse Transfer Capacitance CRSS 93 pF c SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON)VDD=6V,ID=1A VGEN=4.5V RL=6 ohm RGEN=6 ohm 4 8 ns Rise Time tr 14 26 ns Turn-Off Delay Time tD(OFF)21 39 ns Fall Time tf 7.2 ns Total Gate Charge Qg VDS=6V ID=2.8A VGS=4.5V 13 nC Gate-Source Charge Qgs 4.1 nC

7、Gate-Drain Charge Qgd 2.9 nC Note b.Pulse Test Pulse width 300us,Duty Cycle 2%.c.Guaranteed by design,not subject to production testing.PL2302GD 3 VGS=2.55V VGS=2V ID=250uA VGS=4.5V ID=2.8A Vth,Normalized Gate-Source Threshold Voltage BVDSS,Normalized Gate-Source Breakdown Voltage ID,Drain Current(A

8、)VGS ,Gate to Source Voltage(V)RDS(on),Normalized On-Resistance ID,Drain Current(A)10 10 8 8 6 6 4 4 2 2 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2.0 2.5 3.0 VDS,Drain-to-Source Voltage(V)Figure 1.Output Characteristics VGS,Gate-to-Source Voltage(V)Figure 2.Transfer Characteristics 1.1 2 1.075 1.75 1.05 1.5 1.02

9、5 1.25 1 1 0.975 0.75 0.95 0.5 0.925-50-25 0 25 50 75 100 125 Tj,Junction Temperature(C)Figure 3.Breakdown Voltage Variation with Temperature 0.25-50-25 0 25 50 75 100 125 Tj,Junction Temperature(C)Figure 4.On-Resistance Variation with Temperature 1.3 1.2 1.1 1 0.9 0.8 0.7 5 ID=250uA VDS=6V ID=2.8A

10、4 3 2 1 0.6 -50-25 0 25 50 75 100 125 0 0 4 8 12 16 20 24 Tj,Junction Temperature(C)Qg,Total Gate Charge(nC)Figure 5.Gate Threshold Variation with Temperature Figure 6.Gate Charge PL2302GD 4 r(t),Normalized Effective Transient Thermal Impedance I D ,Drain Current(A)IS,Source-Drain Current(A)20 10.00

11、 10 0.001S 1 0.01S 0.1S 0.1 0.04 VGS=4.5V Single Pulse TA=25 C DC 1.00 0.1 1 10 20 0.3 0.7 0.76 0.85 0.93 0.99 1.04 VDS,Drain-Source Voltage(V)Figure 7.Maximum Safe Operating Area VSD,Body Diode Forward Voltage(V)Figure 8.Body Diode Forward Voltage Variation with Source Current VDD RL D Vout VDS 9O%

12、VGS Vin RGEN G S 1O%VGS td(on)t r t d(off)t f Figure 9.Switching Test Circuit and Switching Waveforms 2 1 Duty Cycle=O.5 O.2 O.1 O.1 O.O5 PDM t1 t2 O.O1 O.O2 Single Pulse 1.RthJA(t)=r(t)*RthJA 2.RthJA=See Datasheet 3.TJM-TA=PDM*RthJA(t)4.Duty Cycle,D=t1/t2 1O-4 1O-3 1O-2 1O-1 1 1O 3O Square Wave Pulse Duration(sec)Figure 10.Normalized Thermal Transient Impedance Curve PL2302GD