FTLCD工艺制程简介.ppt

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1、2009年年04月月21日日1/26/2023周刚09-4-19编写ContentsContents 2 2.1 1.3 3.Array process Module ProcessCell Process TFT LCD 客客户导户导向，向，团结协团结协作作 精益生精益生产产，精益管理，精益管理qq Team workTeam workTFT-LCDCOGRecipeOICSTKODFADIq TFT-LCD ENGLISH一一一一：Array ProcessArray Processqq OrganizationOrganizationq Array Layout TFT ARRAY PR

2、OCESSCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitorCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitora-Si TFTTFT StructureDeposit and pattern gate metalFunctions:Gate of TFTSelect linesBottom electrode of storage capacitorMetal options:Ti/Al/TiAl

3、/MoCrMoCCCross-section CCa-Si TFT array process step 1a-Si TFT array process step 2Deposition of SiN/a-Si/n+by PECVD,patterning of a-SiSiN is gate dielectric and storage capacitor dielectricSelective etch of a-SiSiN is not etchedCCSiNa-Si/n+a-Si TFT array process step 3Deposition and patterning of s

4、ource/drain metalFunctions:Source and drain metalData line metalMetal optionsTi/Al/Ti or Ti/AlCrMo or Mo/AlBack etch of n+a-Si from channel areaCCa-Si TFT array process step 4Deposition and patterning of passivation SiN by PECVDFunction:Passivate TFTCCa-Si TFT array process step 5Deposition and patt

5、erning of ITOFunction:Pixel electrodeTop electrode of storage capacitorCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitorCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitora-Si TFT TFT ARRAY PROCESS_PVD/CVDUsed for ITO(Indium Tin Oxide transparent con

6、ductor)and for metals(Al,Mo,Cr,etc.)DC Sputter depositionDC Sputter depositionSchematic diagram of DC powered sputter deposition equipment(glow discharge)ground-V(DC)VacuumCathode shield-100-1000VPVD原理ACLSLoadlockT/CP/CP/CP/CP/CP/CPECVD(即等离子体增强化学气相沉积即等离子体增强化学气相沉积)工作原理工作原理:采用等离子辅助对化合物进行催化分解采用等离子辅助对化合

7、物进行催化分解目的目的:利用等离子体辅助活化反应气体利用等离子体辅助活化反应气体,降低反应温度降低反应温度,改善薄膜质量改善薄膜质量PECVD原理LayerFeed gasMaterialTempFunction3 LayerSiH4,N2,NH3A-SiNx320350Gate insulator SiH4,H2a-SiSemiconductorSiH4,PH3,H2n+a-SiContact layer at source and drain1 LayerSiH4,N2,NH3A-SiNx270290 passivation温度气体流量比(Si:H,N:H,Si:N)RFPressure

8、Spacing(上下电极间距)影响成膜工艺的主要参数周刚09-4-19编写 M/A EUVMAINT EXT/COL4U/CU/CU/CU/C C/SSCRHP3HP3HP1HP3HP1COL1COL1 M/A DP DEVELOPEREXTPSPSEXT M/A HP2HP2I/FBUFCOL3TITLER/EE EXTEXTHP2COL2EXTPSPSPSPSOUTINOUTINOUT30600mm6000mmHeight:2450mm5585mm TFT ARRAY PROCESS_PHOTOSLIT COATEREXPOSURECANON MPA6000 JUMPstageNozzle

9、Slit Coater&DPDP照明光学系统照明光学系统照明光学系统照明光学系统掩膜板台掩膜板台掩膜板台掩膜板台基板台基板台基板台基板台投影光学系统投影光学系统投影光学系统投影光学系统掩膜板交换装置掩膜板交换装置掩膜板交换装置掩膜板交换装置操作用电脑操作用电脑操作用电脑操作用电脑缓冲装置缓冲装置缓冲装置缓冲装置MPA6000 Exposure unitArrayCFTP&OL MarkOLTP TFT ARRAY PROCESS_WET TFT ARRAY PROCESS_DRYCassette stationL/LT/CP/CP/CP/CP/CDET原理利用Plasma将反应气体解离，ion

10、轰击与radicals反应将Film移除，真空下进行RIE：指的是：指的是Reactive ion etching，即反应离子刻蚀，即反应离子刻蚀 目的 蚀刻终点检测。原理利用从蚀刻中开始到结束为止特定的波长的光强度的变化，检测出蚀刻的最合适的终点。plasma13.56 MHz検出器Optical fiberArray Tester将TFT Array Panel进行测试，如果有短路（SHORT),或是短路(OPEN),就将坐标点记录下来，传给Laser Repair（激光修复机）修复之1.测量元件导通电流测量元件导通电流,ION2.测量元件截止电流测量元件截止电流,IOFF3.测量切入测量

11、切入(CUT IN)电压电压VT4.测量电压电流曲线测量电压电流曲线TV CURVE电压电压V电流电流I切入電壓切入電壓IOFFIONTEG1/26/2023TAKE A BREAKTAKE A BREAKQUESTION AND ANSWERCF/Color FilterCF/Color FilterLCLCSealantSealantSpacer in SealSpacer in SealSeal whit AU BallSeal whit AU BallSpacerSpacerPIPITFT GlassTFT GlassPolarizerPolarizer周刚09-4-19编写二二二二：

12、Cell ProcessCell ProcessCFCFTFTTFTPI LinePI LineRubbing LineRubbing LineCFCFTFTTFTODF LineODF LineCELLCELLCFCFTFTTFTCELL工艺流程Scraper TypeScraper TypeDoctor RollDoctor RollDispenserDispenserAPR APR 版版APR:Asahi Photosensitive ResinPI CoaterProcessProcessPI Coater要求特性RubbingRubbing 动作动作摩擦轮摩擦轮摩擦轮摩擦轮平台平台平

13、台平台玻璃玻璃玻璃玻璃ProcessProcessSpacer SprayShort DispenserSeal DispenserLC DispenserUV CURE C FC F上基板上基板 TFT TFT下基板下基板AssemblyProcessProcessODF制成12ProcessProcessScriberZero level detect工作台运动方向及速度切割过程1.1.2.2.3.3.4.4.5.5.6.6.ProcessProcessProcessProcessE-C-PLength Length GrindingGrindingWidth Width Grinding

14、GrindingInInOutOutEdge Grind(Skip)ProcessProcessCleanerProcessProcessPOL Attach侧面动作示意正面动作示意POL AttachProcessProcess周刚09-4-19编写三三三三：Module ProcessModule ProcessMODULE工艺流程图工艺流程图ACFFOG UV LINKCOGIC 邦定镜检AOI检测FOGACF 粘贴FOG 邦定镜检电测1封胶胶带粘贴补强UV固化组装副屏电测背光源检测背光源组装主副屏焊接背光源焊接主副屏组装外框组装外框焊接触摸屏组装触摸屏焊接保护胶带粘贴最终电测老化老化包装包装出货出货 JUMPModule Process FlowDriver Connection to GlassChip on Film(COF)or Chip on Glass(COG)ACFCOGCOG ProcessFPCFPC ProcessUVAging Conditions:50 deg.C2 hrsAging周周周周刚刚即日即日即日即日