8050三极管规格书.pdf

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1、 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors M8050 TRANSISTOR(NPN)FEATURES Power dissipation MARKING:Y11 MAXIMUM RATINGS(TA=25 unless otherwise noted)Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Em

2、itter-Base Voltage 6 V IC Collector Current-Continuous0.8 APC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature-55-150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(B

3、R)CBO IC=100A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO*IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 6 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 A Collector cut-off current ICEO VCE=20V,IB=0 0.1 A hFE(1)VCE=1V,IC=5mA 45 hFE(2)VCE=1V,IC=100mA 80 300 DC cu

4、rrent gain hFE（3）VCE=1V,IC=800mA 40 Collector-emitter saturation voltage VCE(sat)IC=800mA,IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat)IC=800mA,IB=80mA 1.2 V Transition frequency f T VCE=6V,IC=20mA,f=30MHz 150 MHz *Pulse Test:pulse width 300s,duty cycle 2%.CLASSIFICATION OF hFE(2)Rank L H Range 80-200 200-300 SOT-23 1.BASE 2.EMITTER 3.COLLECTOR