DTM4410规格书最新版.pdf

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1、1N-Channel 30-V(D-S)MOSFETFEATURESHalogen-free According to IEC 61249-2-21TrenchFET Power MOSFET100%Rg and UIS TestedAPPLICATIONSNotebook CPU Core-High-Side SwitchPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)aQg(Typ.)300.0045 at VGS=10 V 188 nC0.0065 at VGS=4.5 V 14.5SO-8 SDSD SDGD5 6 7 8 Top View 2 3 4 1 N-

2、Channel MOSFET G D S Notes:a.Based on TC=25 C.b.Surface Mounted on 1 x 1 FR4 board.c.t=10 s.d.Maximum under Steady State conditions is 85 C/W.ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise noted ParameterSymbol Limit UnitDrain-Source Voltage VDS30VGate-Source Voltage VGS 20Continuous Drain Curren

3、t(TJ=150 C)TC=25 CID18ATC=70 C13.5TA=25 C12b,cTA=70 C9.6b,cPulsed Drain CurrentIDM50Continuous Source-Drain Diode Current TC=25 CIS4.5TA=25 C2.2b,cSingle Pulse Avalanche CurrentL=0.1 mHIAS20Avalanche EnergyEAS20mJMaximum Power DissipationTC=25 CPD5WTC=70 C3.2TA=25 C2.5b,cTA=70 C1.6b,cOperating Junct

4、ion and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RESISTANCE RATINGS ParameterSymbolTypicalMaximumUnitMaximum Junction-to-Ambientb,dt 10 sRthJA3850C/WMaximum Junction-to-Foot(Drain)Steady StateRthJF2025 DTM44102 3 5 5 3 Q 6 8 8 7 2 黄R 1 3 7 6 0 3 2 电5 0 7 02Notes:a.Pulse test;pulse width 3

5、00 s,duty cycle 2%b.Guaranteed by design,not subject to production testing.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated

6、in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDS VGS=0

7、 V,ID=250 A 30VVDS Temperature CoefficientVDS/TJID=250 A 34mV/CVGS(th)Temperature CoefficientVGS(th)/TJ-4.7Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=250 A 1.02.2VGate-Source LeakageIGSSVDS=0 V,VGS=20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=30 V,VGS=0 V1AVDS=30 V,VGS=0 V,TJ=55 C 10On-State

8、 Drain CurrentaID(on)VDS 5 V,VGS=10 V 30ADrain-Source On-State ResistanceaRDS(on)VGS=10 V,ID=10 A 0.00380.0045VGS=4.5 V,ID=7 A 0.00570.0065Forward TransconductanceagfsVDS=15 V,ID=10 A 30SDynamicbInput CapacitanceCiss VDS=15 V,VGS=0 V,f=1 MHz985pFOutput CapacitanceCoss 205Reverse Transfer Capacitance

9、Crss 76Total Gate ChargeQg VDS=15 V,VGS=10 V,ID=10 A1827nCVDS=15 V,VGS=4.5 V,ID=10 A812Gate-Source ChargeQgs 2.4Gate-Drain ChargeQgd2.3Gate ResistanceRgf=1 MHz0.31.32.6Turn-On Delay Timetd(on)VDD=15 V,RL=1.5 ID 10 A,VGEN=4.5 V,Rg=1 1425nsRise Timetr 1224Turn-Off Delay Timetd(off)1935Fall Timetf918Tu

10、rn-On Delay Timetd(on)VDD=15 V,RL=1.5 ID 10 A,VGEN=10 V,Rg=1 816Rise Timetr 1020Turn-Off Delay Timetd(off)1630Fall Timetf918Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C4.5APulse Diode Forward CurrentaISM50Body Diode VoltageVSDIS=3 A0.761.1VBody Diode Reverse

11、Recovery TimetrrIF=10 A,dI/dt=100 A/s,TJ=25 C1428nsBody Diode Reverse Recovery ChargeQrr510nCReverse Recovery Fall Timeta8nsReverse Recovery Rise Timetb6 DTM44103TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsOn-Resistance vs.Drain Current and Gate VoltageGate Charge0102030

12、40500.00.51.01.52.02.5VGS=10 thru 4 VVGS=3 VVDS-Drain-to-Source Voltage(V)-Drain Current(A)ID0.0050.0070.0090.0110.0130.01501020304050VGS=10 VVGS=4.5 V-On-Resistance()RDS(on)ID-Drain Current(A)02468100.03.77.411.114.818.5VDS=20 VID=10 AVDS=15 VVDS=10 V-Gate-to-Source Voltage(V)Qg-Total Gate Charge(n

13、C)VGSTransfer CharacteristicsCapacitanceOn-Resistance vs.Junction Temperature0.01.63.24.86.48.0012345TC=25 CTC=125 CTC=-55 CVGS-Gate-to-Source Voltage(V)-Drain Current(A)IDCrss02605207801040130002.44.87.29.612CissCossVDS-Drain-to-Source Voltage(V)C-Capacitance(pF)0.60.81.01.21.41.61.8-50-25025507510

14、0125150ID=10 AVGS=4.5 VVGS=10 VTJ-Junction Temperature(C)(Normalized)-On-ResistanceRDS(on)DTM44104TYPICAL CHARACTERISTICS 25 C,unless otherwise notedSource-Drain Diode Forward VoltageThreshold Voltage0.00.20.40.60.81.01.210.010.0010.110100TJ=150 CTJ=25 CVSD-Source-to-Drain Voltage(V)-Source Current(

15、A)IS-0.8-0.6-0.4-0.200.20.4-50-250255075100125150ID=250 AID=5 mAVariance(V)VGS(th)TJ-Temperature(C)On-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-Ambient0.000.010.020.030.040.05012345678910TJ=25 CTJ=125 CID=10 A-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)01632486480011

16、100.00.010.1Time(s)Power(W)Safe Operating Area,Junction-to-Ambient10010.11101000.01100.1TA=25 CSingle Pulse1 s10 sLimited by RDS(on)*BVDSS Limited1 ms10 ms100 msDCVDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specified-Drain Current(A)ID DTM44105TYPICAL CHARACTERISTICS 25 C,unless

17、 otherwise noted*The power dissipation PD is based on TJ(max)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packageli

18、mit.Current Derating*0481216200255075100125150TC-Case Temperature(C)ID-Drain Current(A)Power,Junction-to-Ambient0.01.22.43.64.86.00255075100125150TC-Case Temperature(C)Power(W)Power Derating,Junction-to-Foot0.00.40.81.21.62.00255075100125150TA-Ambient Temperature(C)Power(W)DTM44106TYPICAL CHARACTERI

19、STICS 25 C,unless otherwise notedNormalized Thermal Transient Impedance,Junction-to-Ambient0.20.1t1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=85 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedDuty Cycle=0.5Single Pulse0.020.0510-310-2110100010-110-4100Square Wave Pulse Duration(s)Normalized Effect

20、ive TransientThermal Impedance0.10.011Normalized Thermal Transient Impedance,Junction-to-Foot10-310-201110-110-40.20.1Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.010.050.02Single Pulse DTM44101DIMMILLIMETERSINCHESMinMaxMinMaxA1.351.750.0530.069A10.

21、100.200.0040.008B0.350.510.0140.020C0.190.250.00750.010D4.805.000.1890.196E3.804.000.1500.157e1.27 BSC0.050 BSCH5.806.200.2280.244h0.250.500.0100.020L0.500.930.0200.037q0808S0.440.640.0180.026ECN:C-06527-Rev.I,11-Sep-06DWG:549843125687HEh x 45CAll Leadsq0.101 mm0.004LBA1AeD0.25 mm(Gage Plane)SOIC(NARROW):8-LEADJEDEC Part Number:MS-012SPackage Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-80.246(6.248)Recommended Minimum PadsDimensions in Inches/(mm)0.172(4.369)0.152(3.861)0.047(1.194)0.028(0.711)0.050(1.270)0.022(0.559)Return to IndexReturn to IndexApplication Note