TOSHIBA_Power MOSFETs_规格书.pdf

《TOSHIBA_Power MOSFETs_规格书.pdf》由会员分享，可在线阅读，更多相关《TOSHIBA_Power MOSFETs_规格书.pdf（45页珍藏版）》请在淘文阁 - 分享文档赚钱的网站上搜索。

1、Power MOSFETsPRODUCT GUIDE2004-3semiconductor2004http:/www.semicon.toshiba.co.jp/engCONTENTS 1 Features and Structure.4 2 New Power MOSFET Products.5 3 Selection Guide.6-9 4 Power MOSFET Characteristics1.SOP Series.10-152.VS Series.16-17 3.TFP Series.18-21 4.TO-220SIS-MOSIV/VI Series.22-23 5.L2-MOSV

2、.24-25 6.2.5-V Drive-MOSV.25 7.U-MOSIII Series(Trench Type).26 8.-MOSVII Series.27 9.-MOSV Series(VDSS=150 to 250 V).2810.-MOSV Series(VDSS=400 to 700 V).2911.High-Speed-MOSV Series(VDSS=450 to 600 V).3012.-MOSIII/IV Series(VDSS=800 to 1000 V).31 5 Power MOSFET Modules.32 6 Product List.33-36 7 Supe

3、rseded Products.37-38 8Final-Phase and Discontinued Products.38-39 9 Package List.40-4732Features and Structure4Power MOSFETsAll power MOSFETs have the following features:1)No carrier storage effect Superior frequency and switching characteristics2)Rugged without current concentration3)Low drive pow

4、er due to voltage-controlling device4)Easy parallel connectionG-MOSToshiba Power MOSFETs use the double-diffusion MOS(D-MOS)structure,which produces a high-withstand voltage,to form channels.This structure is especially well suited to high-withstad voltage and high-current devices.A high level of in

5、tegration yields a high-performance power MOSFET with low On-resistance and low power loss.G U-MOSHigher channel density is achieved by connecting channel vertically as having a U-groove at the gate region and this structure reduces On-resistance to lower than other MOSFET structures.This is an idea

6、l for low-voltage power MOSFETs.GateDouble-Diffusion Structuren+n+PPn+n-SourceGateTrench StructureDrainDrainn+n+PPn+n-SourceI Toshiba Power MOSFETs have the following additional features:I Structure of Toshiba Power MOSFETs DrainGateSourceProtection zener diode1)Guaranteed avalanche withstand capabi

7、lityNo absorber circuit required2)Improved the function of built-in diodesgreatly expands the possibility of circuit design3)High ruggednessenables to take better margin for circuit design4)High-speed switching contributes to equipments high-speed operation5)Low R(DS)ONreduces power consumption of e

8、quipment6)Downsized packagesenable equipments size to be compact and thin 7)Low drive lossreduces power consumption of equipment8)Zener diode between gate and source Improved electrostatic withstand between gate and sourceNew Power MOSFET Products5G DC-DC convertersG PDP driversG Motor driversApplic

9、a-tionsTFP(Thin Flat Package)Series is comprised of new high-performance devices with a 4-pin structure for separating input and output.TFP Series devices have the same ratings as existing TO-220SM package devices;however,the volume of them occupies only 42%of the volume of TO-220SM package devices.

10、G DC-DC convertersG Motor drivesG Solenoids and lamp drivesApplica-tionsHigh-integration is achieved using trench structure technique.Low-voltage driving(VGS=4 V)is possible because of ultra-low On-resistance.G MonitorsG DC-DC convertersG PDP drivesApplica-tionsThe-MOS Series is comprised of low-cos

11、t devices which are ideal for use in monitors,especially for frequency control and S-shape correction.G InvertersG Motor drivesG AC adaptersApplica-tions-MOS V High-Speed Series is new product series and achieves faster switching speed than-MOS V Series which are currently well-established in the ma

12、rketplace.Two types of series are available:High-Speed Switching SeriesHigh-Speed Diode SeriesG Switching power suppliesG Switching power suppliesG AC adaptersG Lighting invertersApplica-tionsThis Series is comprised of highly integrated,high-performance,high-breakdown-voltage and low-cost products

13、with VDSS in the range 400 V to 600 V which are ideal for use in 100-V AC input-switching power supplies.G Switching power suppliesApplica-tionsThis Series is comprised of highly integrated,high-performance,high-breakdown-voltage and low-cost products with VDSS in the range 800 V to 900 V which are

14、ideal for use in 200-V AC input-switching power supplies.VS Series and PS Series products are very compact and thin,and suitable for various items of portable electronic devices.G Portable phonesG Notebook PCsG Portable electronic devisesApplica-tionsApplica-tionsApplica-tionsNew Power MOSFET Produc

15、tsAll products have a protection zener diode between gate and source.Avalanche withstand capability in single and series Power MOSFET productsSOP Series VDSS=20 V to 60 VVS and PS Series VDSS=12 to 30 VTFP(Thin Flat Package)SeriesThis series downsized 2.8-mm package height compared to the convention

16、al package,TO220NIS.In addition,the chip design optimization,-MOS IV/VI Series housed in this new package,reduced Qg characteristics.G DC-DC convertersG AC adaptersG Motor drivesG Switching power suppliesTO-220SIS Series VDSS=450 to 900 VU-MOS III Series VDSS=40 V to 100 VWith employing submicron te

17、chnology and reducing gate charge,this latest series realized extremely fast speed and low RDS(ON).G Digital ampsG DC-DC convertersG Motor drivers-MOS VII Series VDSS=100 V-MOS V Series VDSS=400 V to 600 V-MOS III Series VDSS=800 V to 900 V-MOS V Series VDSS=150 V to 250 V-MOS V High-Speed Series VD

18、SS=250 V to 600 VSOP Series products are compact and thin,and require only a small mounting area.They are suitable for lithium-ion secondary battery protection circuits and for notebook PCs.G Lithium-ion secondary battery protection circuitsG Notebook PCsG Portable electronic devicesApplica-tionsSel

19、ection Guide76 2SK3473(1.6)P TPC8104-H(0.065)NS#TPCF8A01(0.049)N#TPCF8201(0.049)TPCS8209(0.05)N TPCF8001(0.032)P TPCF8301(0.11)VDSS(V)ID(A)16203040#2SK2549(0.29)#2SJ465(0.71)#2SK2493(0.1)#2SJ439(0.2)N#TPC6004(0.024)2SJ511(0.45)2SK2964(0.18)CP TPC8403(0.055)P TPC8303(0.035)CP TPC8401(0.035)CP TPC8402

20、(0.035)TPC8208(0.05)TPCS8209(0.03)N#TPCS8205(0.045)N#TPCS8210(0.03)P#TPC8305(0.03)P TPCS8302(0.035)TPC8203(0.021)50601001501802002504004505006007008009001000 2SK2615(0.3)2SK2961(0.3)2SK3658(0.3)2SJ315(0.25)2SJ377(0.19)2SJ378(0.19)2SJ438(0.19)2SK2229(0.16)2SK2231(0.16)2SK2741(0.16)2SK3543(2.45)2SK220

21、1(0.35)2SK2200(0.35)2SK2742(0.35)2SJ338(5.0)2SK2162(5.0)2SJ313(5.0)2SK2013(5.0)TPC8207(0.02)TPCS8211(0.024)TPCS8204(0.017)TPCS8102(0.02)P#TPCS8102(0.02)2SJ567(2.0)N#TPCS8212(0.024)P#TPC6101(0.06)N TPC6001(0.03)12P TPC6103(0.035)P TPC6104(0.04)N TPC6002(0.03)N TPC8006-H(0.027)N TPC6003(0.024)N TPC620

22、1(0.095)CNmTPCP8402(0.077)P TPC6102(0.06)N#TPCS8208(0.017)2SJ610(2.55)TPCS8004-H(0.8)TPC8012-H(0.4)11.31.51.822.52.32.733.53.43.24.555.56.577.588.59644.20.5VDSS(V)ID(A)11.31.51.822.52.72.333.53.43.24.555.56.577.588.59644.20.5 2SK3302(18)2SK2998(20)2SK3471(18)2SK2845(9)2SK2733(9.0)2SK3301(20)2SK2718(

23、6.4)2SK2700(4.3)2SK2608(4.3)2SK2719(4.3)2SK3762(6.4)2SK3763(4.3)2SK3760(2.2)2SK3758(1.5)2SK3761(1.25)2SK3759(0.85)2SK2883(3.6)2SK2603(3.6)2SK3371(9)2SK2836(9)2SK3374(4.6)2SK3472(4.6)2SK3498(5.5)2SK2992(3.5)2SK2963(0.7)2SJ508(1.9)2SK2962(0.7)2SJ509(1.9)2SK3670(1.7)2SJ360(0.73)2SJ507(0.7)2SK2989(0.15)

24、2SJ668(0.17)2SK2399(0.23)2SK2400(0.23)2SK3205(0.52)2SJ407(1.0)2SK2381(0.8)2SK2835(0.8)2SK2920(0.8)2SJ537(0.19)2SK3462(1.7)2SK3342(1.0)2SK2599(3.2)2SK3373(3.2)2SK2862(3.2)2SK2846(5.0)2SK3067(5.0)2SK2865(5.0)2SK2750(2.2)2SK3085(2.2)2SJ512(1.25)2SJ516(0.8)2SK2417(0.5)2SK2662(1.5)2SK2661(1.5)2SK2991(1.5

25、)2SK3466(1.5)2SK2274(1.7)2SK1930(3.8)2SK1119(3.8)P TPC8302(0.12)CPm TPCP8402(0.072)CP TPCF8402(0.077)PS TPCF8B01(0.11)P#TPC6105(0.11)PDmTPC8401(0.038)PDmTPCP8J01(0.035)(-32V)N TPC8211(0.036)P#TPC8303(0.021)CN TPC8401(0.021)CN TPC8403(0.033)NS TPC8A01(0.018)N TPC8210(0.015)N TPC8206(0.05)N TPC8206(0.

26、05)P TPC8105-H(0.04)N TPC8001(0.02)P TPC8110(0.025)P TPCS8101(0.025)NS#TPC8A01(0.025)CN TPC8402(0.05)TPC8004(0.05)2SJ525(0.12)2SK2679(1.2)2SK2838(1.2)2SK2604(2.2)2SK2605(2.2)2SK2884(2.2)2SK2610(2.5)2SK2717(2.5)2SK1359(3.8)2SK3565(2.5)2SK2542(0.85)2SK2543(0.85)2SK2776(0.85)2SK3538(0.85)2SK3626(0.85)2

27、SK2952(0.55)2SK2350(0.4)2SK2914(0.5)2SK2917(0.5)2SK2544(1.25)2SK2545(1.25)2SK2602(1.25)2SK2777(1.25)2SK2746(1.7)2SK3633(1.7)2SK2749(2.0)2SK3700(2.5)2SK1120(1.8)2SK2613(1.7)2SK1365(1.8)2SK2847(1.4)2SK3017(1.25)2SK2606(1.2)2SK2611(1.4)2SK2607(1.2)2SK2467(0.83)2SJ440(0.83)P#TPCF8302(0.059)P TPCF8303(0.

28、058)CN TPCF8402(0.05)P TPCF8103(0.11)P TPCF8101(0.028)P TPCF8102(0.030)P TPCF8104(0.028)N TPCF8001(0.023)P TPC8301(0.12)2SK3130(1.55)2SK3316(1.8)2SK3417(1.8)N#TPC6005(0.028)2SK3627(1.5)2SK3563(1.5)2SK3562(1.25)2SK3667(1.0)2SK3561(0.85)2SK3564(4.3)2SK3567(2.2)2SK3566(4.3)2SK3798(3.5)2SK3757(2.45)2SK3

29、767(5.0)NmTPCP8201(0.05)POWER-MINISPTO-92MODPOWER-MOLDDPTO-220ABTO-220(NIS)TO-220FL/SMPackage codeNew product series codeTO-3P(SM)TSSOP-8SOP-8 Lead clampTFPSlim-TFPSOP-8TO-3P(N)ISTO-3P(N)TO-3P(L)TPSVS-8VS-6m PS-8:-MOSIII:-MOSV:-MOSVI:L2-MOSVP=P-chCN=Complementary N-chCP=Complementary P-chNS=N-ch+SBD

30、PS=P-ch+SBD =Under development PD=P-ch+Driver(load switch)Notes:()=RDS(ON)max$=10-V drive#=2.5-V drive=1.8-V drive =High-speed diodeN=N-ch:L2-MOSVI:U-MOS:-MOSVII:-MOSIV TO-220SISSOP AdvanceSelection Guide98302050601001501802002503004504005006007009001000273032353640455560707550252016181415131211VDSS

31、(V)ID(A)27303235364045556070755025VDSS(V)ID(A)1520161814131211 2SJ380(0.21)2SK2382(0.18)2SK2401(0.18)2SJ201(0.625)2SK1530(0.625)2SK2967(0.068)2SK2995(0.068)2SK2508(0.25)2SK2598(0.25)2SK2993(0.105)2SK3388(0.105)2SK3445(0.105)2SK3544(0.4)2SK3444(0.082)2SK3176(0.052)2SK3443(0.055)2SK2882(0.12)2SK3387(0

32、.12)2SK2789(0.085)2SK2314(0.085)2SK3084(0.046)2SK2466(0.046)2SK3442(0.020)2SK1382(0.020)2SK1381(0.032)2SJ412(0.21)2SJ619(0.21)2SJ464(0.09)2SK2391(0.085)2SJ620(0.09)2SK2507(0.046)2SK3089(0.03)2SK3090(0.02)2SK3127(0.011)$2SK3506(0.02)2SK2886(0.02)2SK2312(0.017)2SK2985(0.0058)2SK2232(0.046)2SK2311(0.04

33、6)2SJ334(0.038)2SK3236(0.02)2SK2385(0.03)2SK3662(0.0125)2SJ402(0.038)2SK2844(0.022)2SK3125(0.007)2SK3128(0.011)2SK3397(0.006)$2SK3389(0.005)2SK3439(0.005)$2SK2551(0.011)2SK2745(0.0095)2SK3129(0.007)$2SK2550(0.03)$2SK2744(0.02)2SK2233(0.03)2SK2266(0.03)2SK2376(0.017)$2SK2398(0.03)$2SK3440(0.008)$2SK2

34、445(0.018)2 2SK2173(0.017)2SK3441(0.0058)2SK2987(0.0058)2SK2313(0.011)2SK2267(0.011)2SK2986(0.0058)$2SK3051(0.03)N TPC8015-H(0.008)P TPC8107(0.007)P TPC8114(0.0045)N TPC8003(0.007)N TPC8009-H(0.01)P TPC8112(0.006)N TPC8013-H(0.0065)N TPC8016-H(0.0055)N TPC8017-H(0.0066)N TPC8018-H(0.0046)2SJ304(0.12

35、)2SJ312(0.12)2SJ349(0.045)2SJ401(0.045)2SK2782(0.055)2SK2614(0.046)2SK1486(0.095)2SK1544(0.2)2SK3132(0.09)2SK3403(0.4)2SK2916(0.4)2SK2917(0.27)2SK3117(0.27)2SK2842(0.52)2SK3068(0.52)2SK3743(0.4)2SK3398(0.52)2SK2698(0.4)2 2SK2837(0.27)2SK2953(0.4)2SK2699(0.65)2SK2915(0.4)2SK1489(1.0)2SK3131(0.11)2SK3

36、314(0.48)2SK3313(0.62)2SK3625(0.082)2SK3625(0.082)N TPCA8003-H(0.0066)N TPCA8004-H(0.0046)P TPCA8101-H(0.007)P TPCA8102-H(0.006)P TPCA8103(0.0042)2SK3568(0.52)2SK2965(0.26)N TPC8014(0.014)P TPC8108(0.013)N TPC8010-H(0.016)P TPC8113(0.01)2SK3669(0.125)2SK2839(0.04)2SK2843(0.75)2SK2866(0.75)2SK2889(0.

37、75)2SK2996(1)2SK3438(1.0)2SK3437(1.0)2SK3399(0.75)2SK3265(1.0)P TPC8109(0.02)P TPC8115(0.01)2SK3453(1.0)2SK2841(0.55)2SK2949(0.55)2SK3499(0.55)2SJ200(0.83)2SJ440(0.83)2SK1529(0.83)2SK3497(0.15)2SJ618(0.37)2SK3126(0.65)2SK3309(0.65)2SK3310(0.65)2SK3407(0.65)2SK2968(1.25)2SK2601(1.0)2SK3569(0.75)1010P

38、OWER-MINISPTO-92MODPOWER-MOLDDPTO-220ABTO-220(NIS)TO-220FL/SMPackage codeNew product series codeTO-3P(SM)TSSOP-8SOP-8 Lead clampTFPSlim-TFPSOP-8TO-3P(N)ISTO-3P(N)TO-3P(L)TPSVS-8VS-6m PS-8:-MOSIII:-MOSV:-MOSVI:L2-MOSVP=P-chCN=Complementary N-chCP=Complementary P-chNS=N-ch+SBDPS=P-ch+SBD =Under develo

39、pment PD=P-ch+Driver(load switch)Notes:()=RDS(ON)max$=10-V drive#=2.5-V drive=1.8-V drive =High-speed diodeN=N-ch:L2-MOSVI:U-MOS:-MOSVII:-MOSIV TO-220SISSOP AdvancePower MOSFET Characteristics 10200150100500199920022003High-speed U-MOS IIHigh-speed U-MOS IIIUltra High-speed U-MOS IIIImproved charact

40、eristicsby using Al strapsRDS(ON)QSW(m nC)Circuit example for DC-DC ConverterI Synchronous rectifier(low side)High-speed,trench and N-channel MOSFET (N-channel high-speed or ultra high-speed U-MOS III Series)MOSBDINOUT1.Features of SOP SeriesImproved trade-off between On-resistance and gate switch c

41、harge due to short-channel structure,trench contact structure and Al straps.I Power managementLow On-resistance,trench and P-channel MOSFET(low On-resistance U-MOS IV Series)I Switching(high side)High-speed,trench and N-channel MOSFET(N-channel high-speed or ultra high-speed U-MOS III Series)Al stra

42、psSourceGateDrainGRDS(ON)reductionGReduction of package inductanceChip developmentSOP-8SOP AdvanceStrap structurePackage developmentHigh-speed U-MOS IIHigh-speed U-MOS IIIUltra high-speed U-MOS IIIMOSBD(MOSFET with SBD)Development Process of High-Speed U-MOS Series11TPC8020-H9.56.9TPC8017-H7.37.8TPC

43、8018-H5.012.0TPC8009-H11.09.1TPC8013-H6.615.6RDS(ON)(m)VGS=4.5 VQSW(nC)VDS=24 VVINCINControl ICQ1Q2L1VOUT/IOUTRLC1SBDTest conditionsf=300 kHzVIN=17.6 VVOUT=1.6 V43%RDS(ON)X Qsw reduction(compared to high-speed U-MOS III)I Characteristics Low gate switch charge:14%reduction compared to high-speed U-M

44、OS III Low On-resistance(Al straps):34%reduction compared to high-speed U-MOS III Housed in SOP Advance,high current,thin and excellent heat dissipated packageUltra High-Speed U-MOS III SeriesUltra High-SpeedU-MOS IIIHigh-SpeedU-MOS IIIRDS(ON):VGS=4.5 V typ.Qsw:VDS=24 V typ.Cgd/Cgs:VDS=10 V typ.I El

45、ectrical Characteristics ComparisonNEWPerformance Index:improved 43%Control shoot-through currentI DC-DC Converter Efficiency Comparison Ultra High-Speed U-MOS III vs.Conventional Products Comparison when ultra high-speed MOS III Used in CombinationHigh-Speed U-MOS IIIUltra High-Speed U-MOS IIITPC80

46、09-HTPC8017-HRDS(ON)(m)117.3Qsw(nC)9.17.8Cgd(pF)250175Cgs(pF)12101290RDS(ON)XQsw(mnC)100.156.9Capacitance ratio(Cgd/Cgs)20.7%13.6%0 f=300 kHz,Vin=17.6 V,Vout =1.6 V f=300 kHz,Vin=17.6 V,Vout=1.6 V92%90%78%Efficiency(%)Efficiency(%)80%82%84%86%88%246Output Current Iout(A)Output Current Iout(A)8101214

47、16EfficiencyimprovedSolid line:Ultra High-Speed U-MOS IIIDotted line:High-Speed U-MOS III(conventional products)TPC8020-H+TPC8020-HTPC8009-H+TPC8009-HTPC8009-H+TPC8013-HTPC8020-H+TPC8018-H81%82%83%84%85%86%87%88%89%90%91%0246810121416Solid line:the best combination1.Low current(Iout 10 A)TPC8020-H+T

48、PC8020-H2.High current(Iout 10 A)TPC8020-H+TPC8018-HTPC8020-H+TPC8020-HTPC8017-H+TPC8018-HTPC8020-H+TPC8017-HTPC8017-H+TPC8017-HTPC8020-H+TPC8018-HPower MOSFET Characteristics 12MOSBD(MOSFET with SBD)I Product Line-upNEWHigh sideLow sideQ1+Q2SBDConventional CircuitHigh side(Q1)Low side(Q2)MOSBDBuilt

49、-in SBDSOP-8SOP-8SFLATSOP-8I CharacteristicsI Applications Compact size Integrated three devices(two MOSFETs and one SBD)into a single package High-performance device High side:high-speed MOSFET(high-speed U-MOS III)Low side:MOSBD(U-MOS III MOSFET with a SBD)Portable devices:DC-DC converters for not

50、ebook PCsVDSS(V)ID(A)RDS(ON)max(m)Ciss typ.(pF)Qg typ.(nC)10V4.5VTPC8A01306253017940High-speedU-MOS IIIN-ch/N-ch+SBD308.5/11821492295U-MOS IIIRemarkPart NumberMaximum ratingsCircuitConfiguration13SOP AdvanceI Product Line-up Portable devices:DC-DC converters for notebook PCsI ApplicationsNEW1,2,3:So