ES3AF-ES3DF-ES3GF-ES3JF-SMAF规格书-佑风微电子.pdf

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1、Page 1 of 3Surface Mount Superfast Recovery RectifierReverse Voltage 50 to 600 VForward Current 3 APINNINGSurface Mount Superfast Recovery RectifierReverse Voltage 50 to 600 VForward Current 3 APINNINGPIN12DESCRIPTIONCathodeAnodeTop ViewMarking Code:ES3AFES3JF:ES3AES3JSimplified outline SMAF and sym

2、bolMECHANICAL DATA Terminals:Solderable per MIL-STD-750,Method 2026 pprox.Weight:27mg 0.00086oz Case:SMAFAMaximum DC Blocking VoltagePeak Forward Surge Current 8.3 ms Single HalfSine Wave Superimposed on Rated Load(JEDEC Method)Maximum Forward Voltage at 3AParameterParameterMaximum Repetitive Peak R

3、everse VoltageMaximum RMS voltageOperating and Storage Temperature RangeMaximum Average Forward Rectified Currentat TL=100 CMaximum DC Reverse Current Ta=25 Cat Rated DC Blocking Voltage Ta=125 CTypical Junction Capacitance at V=4V,f=1MHzRVRRMVRMSVDCIF(AV)IFSMVFIRCjT,Tjstg50100150200300400600V357010

4、5140210280420VV3100152004535-55 +150AAVAnsCSymbolsSymbolsRatings at ambient temperature unless otherwise specified.Single phase,half wave,60 Hz,resistive or inductive load.For capacitive load,derate current by 20%.25 CAbsolute Maximum Ratings and CharacteristicsAbsolute Maximum Ratings and Character

5、isticsMaximum Reverse Recovery Timeat I=0.5A,I=1A,I=0.25AFRrrtrrpF ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JFUnits ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JFUnits501001502003004006001.251.712ES3AF THRU ES3JFES3AF THRU ES3JFFEATURESFor surface mounted applications Low profile package Glass Passivated C

6、hip Juntion Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU directives Page 2 of 350 ohmNoninductive25Vdcapprox+-D.U.T10 ohmNoninductiveNonInductive1 ohmOSCILLOSCOPENote 1PULSEGENERATORNote 2Note：1.Rise Time=7ns,max.Input Impedance=1megohm,22pF.2.Ries Time=10ns,max.Source

7、 Impedance=50 ohms.Fig.1 Reverse Recovery Time Characteristic And Test Circuit DiagramFig.4 Typical CharacteristicsFig.1 Reverse Recovery Time Characteristic And Test Circuit DiagramFig.4 Typical CharacteristicsForwardForward1.2 1.4Fig.5 Typical Junction CapacitanceFig.5 Typical Junction Capacitance

8、Junction Capacitance(pF)Reverse Voltage(V)11000.11510T=25JCf=1.0MHzV=50mVsigp-p2025303540450.61.21.82.43.03.50.0255075100125150175Average Forward Current (A)Lead Temperature(C)Fig.2 Maximum Average Forward Current RatingFig.2 Maximum Average Forward Current RatingSingle phase half wave resistiveor i

9、nductive P.C.B mounted on 0.3150.315(8.0)pad areas 8.0mm0.21.00.600.010.11.0100.40.80.001T=25JCInstaneous Forward Current(A)Instaneous Forward Voltage(V)ES3JFES3EFES3AFFig.3 Typical Reverse CharacteristicsFig.3 Typical Reverse CharacteristicsI-Current(A)RReverse201006000.11.010%of PIV.VOLTS 10040803

10、00T=25JCT=75JCT=125JC-0.25-1.00+0.5trr10ns/divSet time Base for 10ns/divES3AF THRU ES3JFES3AF THRU ES3JF10Page 3 of 3MarkingMarkingType numberMarking codeES3AES3BES3CES3DES3EES3GES3JPACKAGE OUTLINEPlastic surface mounted package;2 leadsPACKAGE OUTLINEPlastic surface mounted package;2 leadsSMAFSMAFAC

11、 CALL ROUNDVAMeUNITmm1.30.233.72.74.91.10.183.32.44.47maxminmilmaxmin51439.17.114613010694193173ACDEHE1.61.36351eBottom ViewHEgTop View1.31.05139ggALL ROUNDEDAEpadpadES3AFES3BFES3CFES3DFES3EFES3GFES3JFES3AF THRU ES3JFThe recommended mounting pad sizeES3AF THRU ES3JFThe recommended mounting pad sizeUnit：mm(mil)2.8(110)1.6(63)1.8(71)1.6(63)