DTS2315品牌授权规格书.pdf

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1、1P-Channel 20 V(D-S)MOSFETFEATURESTrenchFET Power MOSFET100%Rg TestedAPPLICATIONSPower Management for Portable and Consumer-Load Switches-DC/DC ConvertersNotes:a.TC=25 C.b.Surface mounted on 1 x 1 FR4 board.c.t=5 s.d.Maximum under steady state conditions is 175 C/W.PRODUCT SUMMARY VDS(V)RDS(on)()Max

2、.ID(A)aQg(Typ.)-200.065 at VGS=-4.5 V-4.513.8 nC0.090 at VGS=-2.5 V-3.70.1175 at VGS=-1.8 V-3.3ABSOLUTE MAXIMUM RATINGS(TA=25 C,unless otherwise noted)ParameterSymbolLimitUnitDrain-Source Voltage VDS-20VGate-Source Voltage VGS 12Continuous Drain Current(TJ=150 C)TC=25 CID-4.5ATC=70 C-3.7TA=25 C-3.5b

3、,cTA=70 C-2.6b,cPulsed Drain Current(t=300 s)IDM-20Continuous Source-Drain Diode CurrentTC=25 CIS-1.4TA=25 C-1b,cMaximum Power DissipationTC=25 CPD1.7WTC=70 C1.1TA=25 C1b,cTA=70 C0.6b,cOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CSoldering Recommendations(Peak Temperature)d,e26

4、0THERMAL RESISTANCE RATINGS ParameterSymbol TypicalMaximumUnitMaximum Junction-to-Ambientb,dt 5 sRthJA100130C/WMaximum Junction-to-Foot(Drain)Steady StateRthJF6075SGDP-Channel MOSFETG TO-236(SOT-23)S D Top View 2 3 1 DTS23152Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,n

5、ot subject to production testing.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifi

6、cations is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS(TJ=25 C,unless otherwise noted)ParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-20VVDS Temperature Coefficien

7、tVDS/TJ ID=-250 A-14mV/CVGS(th)Temperature CoefficientVGS(th)/TJ 2.5Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-0.4-1VGate-Source LeakageIGSSVDS=0 V,VGS=12 V 10AVDS=0 V,VGS=4.5 V 1Zero Gate Voltage Drain CurrentIDSSVDS=-20 V,VGS=0 V-1VDS=-20 V,VGS=0 V,TJ=55 C-10On-State Drain CurrentaID(on

8、)VDS-5 V,VGS=-4.5 V-15ADrain-Source On-State ResistanceaRDS(on)VGS=-4.5 V,ID=-4 A 0.04650.0650VGS=-2.5 V,ID=-4 A 0.07400.0900VGS=-1.8 V,ID=-2 A 0.11350.1175DynamicbTotal Gate ChargeQgVDS=-10 V,VGS=-12 V,ID=-4.5 A23.836nCVDS=-10 V,VGS=-4.5 V,ID=-4.5 A13.821Gate-Source ChargeQgs1.9Gate-Drain ChargeQgd

9、3Gate ResistanceRgf=1 MHz2.21122Turn-On Delay Timetd(on)VDD=-10 V,RL=2.8 ID -3.6 A,VGEN=-4.5 V,Rg=1 2233nsRise Timetr2132Turn-Off Delay Timetd(off)6293Fall Timetf1421Turn-On Delay Timetd(on)VDD=-10 V,RL=2.8 ID -3.6 A,VGEN=-8 V,Rg=1 918Rise Timetr612Turn-Off Delay Timetd(off)6598Fall Timetf1523Drain-

10、Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C-1.4APulse Diode Forward CurrentISM-20Body Diode VoltageVSDIS=-3.6 A,VGS=0 V-0.8-1.2VBody Diode Reverse Recovery TimetrrIF=-3.6 A,dI/dt=100 A/s,TJ=25 C1320nsBody Diode Reverse Recovery ChargeQrr510nCReverse Recovery Fall

11、Timeta8nsReverse Recovery Rise Timetb5 DTS23153TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Gate Current vs.Gate-Source VoltageOutput CharacteristicsOn-Resistance vs.Drain Current0.000 0.010 0.020 0.030 0.040 0.050 0 3 6 9 12 15 IGSS-Gate Current(mA)VGS-Gate-Source Voltage(V)TJ=25 C 0 3 6 9 1

12、2 15 00.511.52ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)VGS=1.5 V VGS=8 V thru 2 VVGS=1 V 0 0.02 0.04 0.06 0.08 0.1 05101520RDS(on)-On-Resistance()ID-Drain Current(A)VGS=1.8 V VGS=2.5 V VGS=4.5 V Gate Current vs.Gate-Source VoltageTransfer CharacteristicsCapacitance10-910-810-710-610-510-410-

13、310-20 4 8 12 16 20 IGSS-Gate Current(A)VGS-Gate-to-Source Voltage(V)TJ=150 C TJ=25 C 0 0.1 0.2 0.3 0.4 0.5 00.350.71.051.4ID-Drain Current(A)VGS-Gate-to-Source Voltage(V)TC=25 C TC=125 C TC=-55 C 0 500 1000 1500 2000 05101520C-Capacitance(pF)VDS-Drain-to-Source Voltage(V)Ciss Coss Crss DTS23154TYPI

14、CAL CHARACTERISTICS(25 C,unless otherwise noted)Gate ChargeSingle Pulse Power,Junction-to-AmbientSoure-Drain Diode Forward Voltage0 2 4 6 8 0510152025VGS-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VDS=16 V VDS=5 V VDS=10 V ID=4.5 A 01020300.0010.010.1110100Time(s)Power(W)0.1 1 10 100 0.0 0.3 0

15、.6 0.9 1.2 1.5 IS-Source Current(A)VSD-Source-to-Drain Voltage(V)TJ=150 C TJ=25 C On-Resistance vs.Junction TemperatureThreshold VoltageOn-Resistance vs.Gate-to-Source Voltage0.7 0.9 1.1 1.3 1.5-50-25 0 25 50 75 100 125 150 RDS(on)-On-Resistance(Normalized)TJ-Junction Temperature(C)ID=4 A VGS=4.5 V

16、VGS=2.5 V 0.2 0.3 0.4 0.5 0.6 0.7-50-25 0 25 50 75 100 125 150 VGS(th)(V)TJ-Temperature(C)ID=250 A 0.000 0.020 0.040 0.060 0.080 02468RDS(on)-On-Resistance()VGS-Gate-to-Source Voltage(V)TJ=125 C TJ=25 C ID=4 A DTS23155TYPICAL CHARACTERISTICS 25 C,unless otherwise noted*The power dissipation PD is ba

17、sed on TJ(max.)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Safe Operating Area,Junction-to-AmbientPow

18、er Junction-to-Case0.001 0.01 0.1 1 10 100 0.1110100ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specified 100 ms Limited by RDS(on)*1 ms TA=25 C Single Pulse BVDSS Limited 10 ms 100 s 10 s,1 s DC 0 0.5 1 1.5 2 0 25 50 75 100 125 150 Power(W)TC-Case Temperatur

19、e(C)Current Derating*Power Junction-to-Ambient0 1.4 2.8 4.2 5.6 7 0 25 50 75 100 125 150 ID-Drain Current(A)TC-Case Temperature(C)0.0 0.2 0.4 0.5 0.7 0.9 0 25 50 75 100 125 150 Power(W)TA-Ambient Temperature(C)DTS23156TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Normalized Thermal Transient I

20、mpedance,Junction-to-Ambient10-310-2000101110-110-41000.20.1Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Duty Cycle=0.5Single Pulse0.020.050.001t1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=175 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedNormalized Thermal

21、Transient Impedance,Junction-to-Foot10.10.010.2Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal ImpedanceSingle Pulse0.110-310-2110-110-40.020.05 DTS23151SOT-23(TO-236):3-LEADbEE1132See1DA2AA1CSeating Plane0.10 mm0.004CCL1LqGauge PlaneSeating Plane0.25 mmDimMILLIMETER

22、S INCHES Min Max Min Max A0.891.120.0350.044A10.010.100.00040.004A20.881.020.03460.040b0.350.500.0140.020c0.0850.180.0030.007D2.803.040.1100.120E2.102.640.0830.104E11.201.400.0470.055e0.95 BSC0.0374 Refe11.90 BSC0.0748 RefL0.400.600.0160.024L10.64 Ref0.025 RefS0.50 Ref0.020 Refq3838ECN:S-03946-Rev.K

23、,09-Jul-01DWG:5479Package Information?1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SOT-230.106(2.692)Recommended Minimum PadsDimensions in Inches/(mm)0.022(0.559)0.049(1.245)0.029(0.724)0.037(0.950)0.053(1.341)0.097(2.459)Return to IndexReturn to IndexApplication Note1DisclaimerALL PRO

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41、ation.Parametersprovided in datasheets and/or specifications may vary in different applications and performance may vary over time.Alloperating parameters,including typical parameters,must be validated for each customer application by the customer stechnical experts.Product specifications do not exp

42、and or otherwise modify Din-Tek s terms and conditions of purchase,including but not limited to the warranty expressed therein.Except as expressly indicated in writing,Din-Tek products are not designed for use in medical,life-saving,or life-sustainingapplications or for any other application in whic

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