鼎日DTQ2221规格书.pdf

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1、1P-Channel 20 V(D-S)MOSFETFEATURESTrenchFET Power MOSFET Thermally Enhanced DFN2X2Package-Small Footprint Area-Low On-ResistanceAPPLICATIONSLoad Switch,PA Switch,and Battery Switch for PortableDevicesNotes:a.Package limited.b.Surface mounted on 1 x 1 FR4 board.c.t=5 s.d.See solder profile The DFN2X2

2、 is a leadless package.The end of the lead terminal is exposed copper(not plated)as a result of the singulation process in manufacturing.A solder fillet at the exposed copper tip cannot be guaranteed and is notrequired to ensure adequate bottom side solder interconnection.e.Rework conditions:manual

3、soldering with a soldering iron is not recommended for leadless components.f.Maximum under steady state conditions is 80 C/W.PRODUCT SUMMARY VDS(V)RDS(on)()(Max.)ID(A)Qg(Typ.)-200.028 at VGS=-4.5 V-12a23 nC0.038 at VGS=-2.5 V-12a0.044 at VGS=-1.8 V-12a0.100 at VGS=-1.5 V-3SGDP-Channel MOSFETABSOLUTE

4、 MAXIMUM RATINGS(TA=25 C,unless otherwise noted)ParameterSymbolLimitUnitDrain-Source Voltage VDS-20VGate-Source Voltage VGS 12Continuous Drain Current(TJ=150 C)TC=25 CID-12aATC=70 C-12aTA=25 C-10b,cTA=70 C-8b,cPulsed Drain Current(t=300 s)IDM-40Continuous Source-Drain Diode CurrentTC=25 CIS-12aTA=25

5、 C-2.9b,cMaximum Power DissipationTC=25 CPD19WTC=70 C12TA=25 C3.5b,cTA=70 C2.2b,cOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CSoldering Recommendations(Peak Temperature)d,e260THERMAL RESISTANCE RATINGS ParameterSymbol TypicalMaximumUnitMaximum Junction-to-Ambientb,ft 5 sRthJA28

6、36C/WMaximum Junction-to-Case(Drain)Steady StateRthJC5.36.5 DTQ2?DFN 2x2Top View Bottom View Pin 1DDGDDSDSPin 12Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent

7、damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device relia

8、bility.SPECIFICATIONS(TJ=25 C,unless otherwise noted)ParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-20VVDS Temperature CoefficientVDS/TJ ID=-250 A-11mV/CVGS(th)Temperature CoefficientVGS(th)/TJ 2.7Gate-Source Threshold VoltageVGS(th)VDS=VGS,I

9、D=-250 A-0.4-1VGate-Source LeakageIGSSVDS=0 V,VGS=8 V 100 nAZero Gate Voltage Drain CurrentIDSSVDS=-12 V,VGS=0 V-1AVDS=-12 V,VGS=0 V,TJ=55 C-10On-State Drain CurrentaID(on)VDS-5 V,VGS=-4.5 V-20ADrain-Source On-State ResistanceaRDS(on)VGS=-4.5 V,ID=-6.7 A 0.0240.028VGS=-2.5 V,ID=-6.2 A 0.0280.038VGS=

10、-1.8 V,ID=-2.3 A 0.0360.044VGS=-1.5 V,ID=-1 A 0.0500.100Forward TransconductanceagfsVDS=-10 V,ID=-6.7 A 30SDynamicbInput CapacitanceCissVDS=-10 V,VGS=0 V,f=1 MHz 1800pFOutput CapacitanceCoss450Reverse Transfer CapacitanceCrss 390Total Gate ChargeQgVDS=-6 V,VGS=-8 V,ID=-10 A 3857nCVDS=-6 V,VGS=-4.5 V

11、,ID=-10 A 2335Gate-Source ChargeQgs 3Gate-Drain ChargeQgd 6.5Gate ResistanceRgf=1 MHz7Turn-On Delay Timetd(on)VDD=-6 V,RL=0.75 ID -8 A,VGEN=-4.5 V,Rg=1 2030nsRise Timetr4060Turn-Off Delay Timetd(off)65100Fall Timetf4060Turn-On Delay Timetd(on)VDD=-6 V,RL=0.75 ID -8 A,VGEN=-8 V,Rg=1 1015Rise Timetr12

12、20Turn-Off Delay Timetd(off)70105Fall Timetf4060Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C-12APulse Diode Forward CurrentISM40Body Diode VoltageVSDIS=-8 A,VGS=0 V-0.8-1.2VBody Diode Reverse Recovery TimetrrIF=-8 A,di/dt=100 A/s,TJ=25 C 4060nsBody Diode Reve

13、rse Recovery ChargeQrr2030nCReverse Recovery Fall Timeta14nsReverse Recovery Rise Timetb26 DTQ2?3TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Output CharacteristicsOn-Resistance vs.Drain Current and Gate VoltageGate Charge08162432400.00.51.01.52.02.53.0VDS-Drain-to-Source Voltage(V)VGS=5 thru

14、 2.5 V-Drain Current(A)IDVGS=1.5 VVGS=1 VVGS=2 V0.020.030.040.050.060.070.080816243240ID-Drain Current(A)-On-Resistance()RDS(on)VGS=1.8 VVGS=4.5 VVGS=2.5 V024680816243240Qg-Total Gate Charge(nC)ID=10 A-Gate-to-Source Voltage(V)VGSVDS=9.6 VVDS=6 VTransfer CharacteristicsCapacitanceOn-Resistance vs.Ju

15、nction TemperatureVGS-Gate-to-Source Voltage(V)02468100.00.30.60.91.21.5TC=25 C-Drain Current(A)IDTC=125 CTC=-55 CCrssVDS-Drain-to-Source Voltage(V)050010001500200025003000036912CossCissC-Capacitance(pF)TJ-Junction Temperature(C)0.80.91.01.11.2-50-250255075100125150RDS(on)-On-Resistance(Normalized)V

16、GS=4.5 V,2.5 VVGS=4.5 V,2.5 VID=6.7 A DTQ2?4TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Soure-Drain Diode Forward VoltageThreshold Voltage00.20.40.60.81.01.2TJ=150 C10VSD-Source-to-Drain Voltage(V)-Source Current(A)IS1TJ=25 C100TJ-Temperature(C)0.20.30.40.50.60.70.8-50-250255075100125150ID=2

17、50 A(V)VGS(th)On-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-AmbientVGS-Gate-to-Source Voltage(V)0.0120.0240.0360.0480.060012345-On-Resistance()RDS(on)ID=6.7 ATA=125 CTA=25 CPower (W)Time(s)1010000.10.010.0011001051015202530Safe Operating Area,Junction-to-Ambient10.11101000.01

18、101 ms-Drain Current(A)ID0.1TA=25 CSingle Pulse10 msDCVDS-Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specifiedLimited by RDS(on)*100 sBVDSS Limited100100 ms1 s10 s DTQ2?5TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)*The power dissipation PD is based on TJ(max)=150 C,using j

19、unction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Current Derating*0510152025300255075100125150ID-Drain Current(A)TC-Case

20、 Temperature(C)Package LimitedPower Derating05101520255075100125150TC-Case Temperature(C)Power Dissipation(W)DTQ2?6TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Normalized Thermal Transient Impedance,Junction-to-Ambient10-310-2110100010-110-41000.20.10.050.02Square Wave Pulse Duration(s)Normal

21、ized Effective TransientThermal Impedance10.10.01Single Pulset1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=80 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedDuty Cycle=0.5Normalized Thermal Transient Impedance,Junction-to-Case10-310-210-410.10.20.1Duty Cycle=0.5Square Wave Pulse Duration(s)Normaliz

22、ed Effective TransientThermal Impedance0.02Single Pulse0.0510-1 DTQ2?1Package Information?1A P P L I C A T I O N N O T EApplication NoteRECOMMENDED PAD LAYOUT FOR DFN2X210.300(0.012)0.350(0.014)2.200(0.087)1.500(0.059)0.650(0.026)0.950(0.037)0.300(0.012)0.355(0.014)0.235(0.009)0.475(0.019)0.870(0.034)0.275(0.011)0.350(0.014)0.550(0.022)0.650(0.026)Dimensions in mm/(Inches)