DTE2312规格书最新版.pdf

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1、1N-Channel 20-V(D-S)MOSFETFEATURESHalogen-freeTrenchFET Power MOSFETNew Thermally Enhanced PowerPAKSC-70 Package-Small Footprint Area-Low On-Resistance100%Rg TestedAPPLICATIONSLoad SwitchPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)aQg(Typ.)200.0193 at VGS=10 V 4.87.9 nC0.022 at VGS=4.5 V 4.80.028 at VGS=2.5

2、 V 4.5N-Channel MOSFETGDSNotes:a.Package limitedb.Surface Mounted on 1 x 1 FR4 board.c.t=5 s.ABSOLUTE MAXIMUM RATINGS TA=25 C,unless otherwise notedParameterSymbolLimitUnitDrain-Source Voltage VDS20VGate-Source Voltage VGS 12Continuous Drain Current(TJ=150 C)aTC=25 CID4.8aATC=70 C4.5aTA=25 C4.8a,b,c

3、TA=70 C4.5a,b,cPulsed Drain CurrentIDM20Continuous Source-Drain Diode CurrentTC=25 CIS4.5aTA=25 C2.9b,cMaximum Power DissipationTC=25 CPD1.9WTC=70 C1.2TA=25 C0.5b,cTA=70 C0.2b,cOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CSoldering Recommendations(Peak Temperature)260THERMAL RE

4、SISTANCE RATINGS ParameterSymbol TypicalMaximumUnitMaximum Junction-to-Ambientt 5 sRthJA2836C/WMaximum Junction-to-Case(Drain)Steady StateRthJC5.36.5RoHSCOMPLIANTTO-226AA(TO-92)Top ViewSDG123 DTE23122 3 5 5 3 Q 6 8 8 7 2 黄R 1 3 7 6 0 3 2 电5 0 7 02Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.

5、Guaranteed by design,not subject to production testing.c.Package LimitedStresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in

6、the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ=25 C,unless otherwise notedParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,I

7、D=250 A 20VVDS Temperature CoefficientVDS/TJ ID=250 A 25mV/CVGS(th)Temperature CoefficientVGS(th)/TJ-3.7Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=250 A 0.61.5VGate-Source LeakageIGSSVDS=0 V,VGS=12 V 100 nAZero Gate Voltage Drain CurrentIDSSVDS=20 V,VGS=0 V 1AVDS=20 V,VGS=0 V,TJ=55 C 10On-State

8、Drain CurrentaID(on)VDS 5 V,VGS=4.5 V 20ADrain-Source On-State ResistanceaRDS(on)VGS=10 V,ID=4.8 A 0.01860.0193VGS=4.5 V,ID=4.8 A 0.0210.022VGS=2.5 V,ID=4.8 A 0.0250.028Forward TransconductanceagfsVDS=10 V,ID=4.8 A 20SDynamicbInput CapacitanceCissVDS=10 V,VGS=0 V,f=1 MHz 1020pFOutput CapacitanceCoss

9、160Reverse Transfer CapacitanceCrss 70Total Gate ChargeQgVDS=10 V,VGS=10 V,ID=4.8 A 17.527nCVDS=10 V,VGS=4.5 V,ID=4.8 A 7.916Gate-Source ChargeQgs 2.1Gate-Drain ChargeQgd 1.1Gate ResistanceRgf=1 MHz0.636Turn-On Delay Timetd(on)VDD=10 V,RL=1.3 ID 3.9 A,VGEN=4.5 V,Rg=1 1218nsRise Timetr1117Turn-Off De

10、lay Timetd(off)2741Fall Timetf1117Turn-On Delay Timetd(on)VDD=10 V,RL=1.3 ID 3.9 A,VGEN=10 V,Rg=1 714Rise Timetr1015Turn-Off Delay Timetd(off)2030Fall Timetf816Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C 4.5cAPulse Diode Forward CurrentISM20Body Diode Voltag

11、eVSDIS=3.9 A,VGS=0 V0.81.2VBody Diode Reverse Recovery TimetrrIF=7.9 A,dI/dt=100 A/s,TJ=25 C 1624nsBody Diode Reverse Recovery ChargeQrr612nCReverse Recovery Fall Timeta7nsReverse Recovery Rise Timetb8 DTE23123TYPICAL CHARACTERISTICS 25 C,unless otherwise notedOutput CharacteristicsOn-Resistance vs.

12、Drain Current and Gate VoltageGate Charge048121620012345VDS-Drain-to-Source Voltage(V)-Drain Current(A)IDVGS=10 thru 3 VVGS=2 V0.010.020.030.04048121620-On-Resistance()RDS(on)ID-Drain Current(A)VGS=10 VVGS=4.5 VVGS=2.5 V0246810048121620ID=9.9 A-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VGSVDS

13、=16 VVDS=10 VTransfer CharacteristicsCapacitanceOn-Resistance vs.Junction Temperature012340.00.51.01.52.02.5VGS-Gate-to-Source Voltage(V)-Drain Current(A)IDTC=25 CTC=125 CTC=-55 CCrss030060090012001500048121620CissVDS-Drain-to-Source Voltage(V)C-Capacitance(pF)Coss0.60.91.21.51.8-50-2502550751001251

14、50TJ-Junction Temperature(C)(Normalized)-On-ResistanceRDS(on)VGS=4.5 V,ID=9.4 AVGS=10 V,ID=9.9 A DTE23124TYPICAL CHARACTERISTICS 25 C,unless otherwise noted Soure-Drain Diode Forward VoltageThreshold Voltage0.11101000.00.20.40.60.81.01.2TJ=150 CVSD-Source-to-Drain Voltage(V)-Source Current(A)ISTJ=25

15、 C0.60.81.01.21.4-50-250255075100125150ID=250 A(V)VGS(th)TJ-Temperature(C)On-Resistance vs.Gate-to-Source VoltageSingle Pulse Power,Junction-to-Ambient0.0100.0160.0220.0280.0340.04005101520-On-Resistance()RDS(on)VGS-Gate-to-Source Voltage(V)TJ=25 CTJ=125 CID=9.9 APower (W)Time(s)1010000.10.010.00110

16、01051015202530Safe Operating Area,Junction-to-AmbientVDS-Drain-to-Source Voltage(V)*VGS minimum VGSat which RDS(on)is specified10010.11101000.0110-Drain Current(A)ID0.1TA=25 CSingle Pulse10 ms100 ms1 s10 sDCLimited by RDS(on)*BVDSSLimited1 ms100 s DTE23125TYPICAL CHARACTERISTICS 25 C,unless otherwis

17、e noted*The power dissipation PD is based on TJ(max)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating falls below the packagelimit.Curre

18、nt Derating*071421280255075100125150TC-Case Temperature(C)ID-Drain Current(A)Package LimitedPower,Junction-to-Case05101520250255075100125150TC-Case Temperature(C)Power(W)Power,Junction-to-Ambient0.00.51.01.52.00255075100125150TA-Ambient Temperature(C)Power(W)DTE23126TYPICAL CHARACTERISTICS 25 C,unle

19、ss otherwise notedNormalized Thermal Transient Impedance,Junction-to-Ambient10-310-2110100010-110-41000.20.10.050.02Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Single Pulset1t2Notes:PDM1.Duty Cycle,D=2.Per Unit Base=RthJA=65 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surfac

20、e MountedDuty Cycle=0.5Normalized Thermal Transient Impedance,Junction-to-Case10-310-210-410.10.20.1Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance0.02Single Pulse0.0510-1 DTE2312Mechanical Dimensions0.46 0.101.27TYP(R2.29)3.86MAX1.27 0.201.27TYP1.27 0.203.60 0.2014.47 0.401.02 0.10(0.25)4.58 0.204.58+0.250.150.38+0.100.050.38+0.100.05TO-92Dimensions in Millimeters?1