鼎日DTU80P03规格书.pdf

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1、1P-Channel 30 V(D-S)MOSFETFEATURESCompliant to RoHS Directive 2002/95/ECPRODUCT SUMMARY VDS(V)RDS(on)()ID(A)a-300.008 at VGS=-10 V 800.009 at VGS=-4.5 V 80SGDP-Channel MOSFETNotes:a.Package limited.b.Duty cycle 1%.c.When mounted on 1 square PCB(FR-4 material).d.See SOA curve for voltage derating.*Pb

2、 containing terminations are not RoHS compliant,exemptions may apply.ABSOLUTE MAXIMUM RATINGS(TC=25 C,unless otherwise noted)Parameter SymbolLimitUnitGate-Source Voltage VGS 20VContinuous Drain Current(TJ=175 C)TC=25 CID-80aATC=125 C-65Pulsed Drain CurrentIDM-240Avalanche CurrentIAR-60Repetitive Ava

3、lanche EnergybL=0.1 mHEAR180mJPower DissipationTC=25 C(TO-220AB and TO-263)PD187dWTA=25 C(TO-263)c3.75Operating Junction and Storage Temperature Range TJ,Tstg-55 to 175CTHERMAL RESISTANCE RATINGS Parameter SymbolLimitUnitJunction-to-AmbientPCB Mount(TO-263)cRthJA40C/WFree Air(TO-220AB)62.5Junction-t

4、o-CaseRthJC0.8AvailableRoHS*COMPLIANTDTU80P03TO-252SGDTop View2Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.c.Independent of operating temperature.Stresses beyond those listed under“Absolute Maximum Ratings”may cause permanent damage to

5、the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPE

6、CIFICATIONS(TJ=25 C,unless otherwise noted)ParameterSymbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS=0 V,ID=-250 A-30VGate Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1-3Gate-Body LeakageIGSSVDS=0 V,VGS=20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-30 V,VGS=0 V-1AV

7、DS=-30 V,VGS=0 V,TJ=125 C-50VDS=-30 V,VGS=0 V,TJ=175 C-250On-State Drain CurrentaID(on)VDS=-5 V,VGS=-10 V-120ADrain-Source On-State ResistanceaRDS(on)VGS=-10 V,ID=-30 A 0.00550.008VGS=-10 V,ID=-30 A,TJ=125 C0.010VGS=-10 V,ID=-30 A,TJ=175 C0.013VGS=-4.5 V,ID=-20 A 0.0080.009Forward Transconductanceag

8、fs VDS=-15 V,ID=-75 A 20SDynamicbInput CapacitanceCissVGS=0 V,VDS=-25 V,f=1 MHz 9000pFOutput CapacitanceCoss1565Reversen Transfer CapacitanceCrss715Total Gate ChargecQgVDS=-15 V,VGS=-10 V,ID=-75 A 160240nCGate-Source ChargecQgs 32Gate-Drain ChargecQgd30Turn-On Delay Timectd(on)VDD=-15 V,RL=0.2 ID -7

9、5 A,VGEN=-10 V,Rg=2.5 2540nsRise Timectr225360Turn-Off Delay Timectd(off)150240Fall Timectf210340Source-Drain Diode Ratings and Characteristicsb (TC=25 C)Continuous CurrentIS-80APulsed CurrentISM-240Forward VoltageaVSDIF=-75 A,VGS=0 V-1.2-1.5VReverse Recovery TimetrrIF=-75 A,dI/dt=100 A/s 55100nsPea

10、k Reverse Recovery CurrentIRM(REC)2.55AReverse Recovery ChargeQrr0.070.25CDTU80P033TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Output Characteristics TransconductanceCapacitance0501001502002500246810VDS -Drain-to-Source Voltage(V)-Drain Current(A)IDVGS=10 V thru 6 V5 V3 V4 VID-Drain Current(

11、A)-Transconductance(S)gfs125 C030609012015002040608010025 CTC=-55 C0200040006000800010 00012 0000612182430VDS -Drain-to-Source Voltage(V)C-Capacitance(pF)CissCossCrss Transfer CharacteristicsOn-Resistance vs.Drain CurrentGate Charge040801201602000123456VGS -Gate-to-Source Voltage(V)-Drain Current(A)

12、ID25 C125 CTC=-55 C00.0050.0100.0150.0200.0250.030020406080100120ID -Drain Current(A)RDS(on)VGS=10 VVGS=4.5 V-On-Resistance()048121620050100150200250300-Gate-to-Source Voltage(V)Qg -Total Gate Charge(nC)VGSVDS=15 VID=75 ADTU80P034TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)On-Resistance vs.J

13、unction TemperatureAvalanche Current vs.Time00.30.60.91.21.51.8-50-250255075100125150175(Normalized)-On-ResistanceTJ -Junction Temperature(C)RDS(on)VGS=10 VID=30 Atin (s)1000100.000010.0010.11100(a)IDav0.010.0001IAV(A)at TA=25 CIAV(A)at TA=150 C10.1Source-Drain Diode Forward VoltageDrain Source Brea

14、kdownvs.Junction Temperature00.20.40.60.81.0VSD -Source-to-Drain Voltage(V)-Source Current(A)IS100101TJ=25 CTJ=150 C2530354045-50-250255075100125150175TJ -Junction Temperature(C)(V)VDSID=250 ADTU80P035THERMAL RATINGS Maximum Avalanche and Drain Currentvs.Case Temperature01530456075900255075100125150

15、175TC-Case Temperature(C)-Drain Current(A)IDSafe Operating Area100010.11101000.1100-Drain Current(A)ID1 ms100 s TC=25 CSingle PulseDC10 ms10Limitedby RDS(on)*VDS-Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specified100 msNormalized Thermal Transient Impedance,Junction-to-CaseSquare

16、 Wave Pulse Duration(s)210.10.0110-410-310-210-11Normalized Effective TransientThermal Impedance100.20.10.050.02Single PulseDuty Cycle=0.5DTU80P031TO-252AA CASE OUTLINENoteDimension L3 is for reference only.L3DL4L5bb2e1E1D1CA1gage plane height(0.5 mm)eb3EC2ALHMILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A2.

17、182.380.0860.094A1-0.127-0.005b0.640.880.0250.035b20.761.140.0300.045b34.955.460.1950.215C0.460.610.0180.024C20.460.890.0180.035D5.976.220.2350.245D15.21-0.205-E6.356.730.2500.265E14.32-0.170-H9.4010.410.3700.410e2.28 BSC0.090 BSCe14.56 BSC0.180 BSCL1.401.780.0550.070L30.891.270.0350.050L4-1.02-0.040L51.141.520.0450.060ECN:X12-0247-Rev.M,24-Dec-12DWG:5347Package Information1A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK(TO-252)0.420(10.668)Recommended Minimum PadsDimensions in Inches/(mm)0.224(5.690)0.180(4.572)0.055(1.397)0.243(6.180)0.087(2.202)0.090(2.286)Application Note