MC2335DS规格书.pdf

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1、1These miniature surface mount MOSFETs utilize High Cell Density process.Low rDS(on)assures minimal power loss and conserves energy,making this device ideal for use in power management circuitry.Typical applications are DC-DC converters,power management in portable and battery-powered products such

2、as computers,printers,PCMCIA cards,cellular and cordless telephones.VDS(V)rDS(on)(OHM)ID(A)0.052 VGS=-4.5V-3.60.072 VGS=-2.5V-3.10.120 VGS=-1.8V-2.7PRODUCT SUMMARY-20P-Channel 20-V(D-S)MOSFETLow rDS(on)Provides Higher Efficiency and Extends Battery LifeMiniature SOT-23 Surface Mount Package Saves Bo

3、ard SpaceFast switching speedHigh performance trench technologyNotesa.Surface Mounted on 1”x 1”FR4 Board.b.Pulse width limited by maximum junction temperatureDSGSymbolRatingsUnitsVDS-20VGS8TA=25oC-3.6TA=70oC-1.8IDM-10IS0.46ATA=25oC1.25TA=70oC0.8TJ,Tstg-55 to 150oCPower DissipationaPDOperating Juncti

4、on and Storage Temperature RangeWContinuous Source Current(Diode Conduction)aABSOLUTE MAXIMUM RATINGS(TA=25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageContinuous Drain CurrentaIDASymbolMaximumUnitst=5 sec100Steady-State150THERMAL RESISTANCE RATING

5、SParameteroC/WMaximum Junction-to-AmbientaRTHJAF Si 2335DS/MC2335DS 2Notesa.Pulse test:PW=300us duty cycle=2%.b.Guaranteed by design,not subject to production testing.MinTypMaxGate-Threshold VoltageVGS(th)VDS=VGS,ID=-250 uA-0.7Gate-Body LeakageIGSSVDS=0 V,VGS=8 V100nAVDS=-16 V,VGS=0 V-1VDS=-16 V,VGS

6、=0 V,TJ=55oC-10On-State Drain CurrentAID(on)VDS=-5 V,VGS=-4.5 V-10AVGS=-4.5 V,ID=-3.6 A52VGS=-2.5 V,ID=-3.1 A72VGS=-1.8 V,ID=-2.7 A120Forward TranconductanceAgfsVDS=-5 V,ID=-1.25 A12SDiode Forward VoltageVSDIS=-0.46 A,VGS=0 V-0.60VTotal Gate ChargeQg12.0Gate-Source ChargeQgs2.0Gate-Drain ChargeQgd2.

7、0Input CapacitanceCiss1312Output CapacitanceCoss130Reverse Transfer CapacitanceCrss106Turn-On Delay Timetd(on)6.5Rise Timetr20Turn-Off Delay Timetd(off)31Fall-Timetf21Drain-Source On-ResistanceArDS(on)mParameterLimitsUnitVDD=-10 V,IL=-1 A,VGEN=-4.5 V,RG=6 nsDynamicbVDS=-5 V,VGS=-4.5 V,ID=-2.4 AnCP-C

8、hannel VDS=-15V,VGS=0V,f=1MHzpFSPECIFICATIONS(TA=25oC UNLESS OTHERWISE NOTED)uAIDSSZero Gate Voltage Drain CurrentStaticTest ConditionsSymbolFREESCALE reserves the right to make changes without further notic e to any products herein.freescale makes no warranty,representation or guarantee regarding t

9、he suitability of its products for any particular purpose,nor does freescale assume any liability arising ou t of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation special,consequential or incidental damages.“Typical”parame

10、ters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.All operating parameters,including“Typicals”must be validated for each customer application by customers technical experts.freescale does not

11、convey any license under its patent rights nor the rights of others.freescale products are not designed,intended,or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life,or for any other application in which

12、the failure of the freescale product could create a situation where personal injury or death may occur.Should Buyer purchase or use freescale products for any such unintended or unauthorized application,Buyer shall indemnify and hold freescaleand its officers,employees,subsidiaries,affiliates,and di

13、stributors harmless against all claims,costs,damages,and expenses,and reasonable attorney fees arising out of,directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use,even if such claim alleges that freescale was negligent regarding the design

14、or manufacture of the part.freescale is an Equal Opportunity/Affirmative Action Employer.F Si 2335DS/MC2335DS 3Typical Electrical CharacteristicsFigure 2.On-Resistance Variation with Drain Current and Gate VoltageFigure 1.On-Region CharacteristicsFigure 4.On-Resistance Variation withGate to Source V

15、oltageFigure 3.On-Resistance Variationwith TemperatureFigure 6.Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5.Transfer CharacteristicsF Si 2335DS/MC2335DS 4Typical Electrical CharacteristicsNormalized Thermal Transient Junction to AmbientFigure 8.Capacitance Charac

16、teristic Figure 7.Gate Charge Characteristic Figure 10.Single Pulse Maximum Power Dissipation Figure 9.Maximum Safe Operating Area F Si 2335DS/MC2335DS 5Package InformationF Si 2335DS/MC2335DS 6Ordering information AM2327P-T1-XX A:Analog Power M:MOSFET 2327:Part number P:P-Channel T1:Tape&reel XX:Blank:StandardPF:LeadfreeF Si 2335DS/MC2335DS