冶金法太阳能级多晶硅提纯技术现状与质量分析(PPT31页)23322.pptx

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1、Status quo of Metallurgical Purified Solar Grade Poly-Silicon and its Quality Analysis 冶金法太阳能级多晶硅提纯技术现状与质量分析Bradley Shi史珺 上海普罗新能源有限公司ProPower Inc.目 录 Brief Introduction of Metallurgical Purification of SOG冶金法简介 Evolution of Metallurgical Purification of SOG 冶金法的进展 Impurities and its affect to the SO

2、G 太阳能级多晶硅的杂质及其对材料性能的影响 Quality Stability Analysis of Metallurgical Purified SOG 冶金法多晶硅的质量稳定性分析 Technology for Poly-Crystallin Silicon Production多晶硅提纯技术分类 Chemical Routine 化学法 Chemical changes happen to Si in purification process 提纯过程中硅发生反应 Physical Routine（Metallurgical Routine)物理法(冶金法）No chemical c

3、hange happens to Si in purification process 提纯过程中硅不发生反应Chemical Routine 化学法 Chemical changes happen to Si in purification process 硅发生了化学反应 Siemens Routine 西门子法 Modified Siemens Routine 改良西门子法 Mainstream Routine at present 目前的主流工艺 Regular Purity is 9N 常规纯度应可达到9N多晶硅纯度的表示 Substract the content of P,B,a

4、nd Metals from 100%用100%扣除磷、硼、金属杂质后的硅的纯度 C,O,N is about 110ppm（无需扣除）含有大约110ppm 级的碳、氧、氮等元素e.g.,7N poly silicon,may contain:B:20ppb,P:50ppb,metals:10ppb;and C:1ppm,O:5ppm,N:1ppm（绝对的硅纯度实际为5N）But content of C,O,N could not exceed the limit但C、O、N 不能过大。太阳能所需要的多晶硅纯度 Poly silicon with purity higher than 7N

5、could not be made into solar cell directly7N 以上的多晶硅无法用来直接作太阳能电池 B or P must be mixed as dopant 须掺入硼或磷 The dopant of B must be about 0.25ppm对太阳能来说，硼的掺杂浓度大约在0.25ppmw i.e.,for solar cell,the purity must down to 6N even using a 11N poly-silicon 也就是说，在生产太阳能电池时，即便采用11N 的高纯硅，也必须掺杂降到6N 左右。Impurities and Sol

6、ar efficiency杂质对光电转换效率的影响Demand of New Technology新工艺的需求 Because impurities must added to high pure poly-silicon from Siemens method,which means energy double waste 采用西门子法得出高纯度的硅后，又要掺杂到6N 的纯度，意味着能源的双重浪费 Thats why the technology of purifying silicon directly to 6N is being explored all the time 直接生产6N

7、 太阳能多晶硅的工艺开始被人们所探索。Metallurgical Routine to purify the poly silicon is the most promising routine 冶金法是被人探索最多，也是目前最被人看好的工艺。Metallurgical(Physical)Routine冶金法（物理法）No chemical change happens to Si in purification process 硅不发生化学反应 Hydro-Metallurgical Routine 湿法冶金法 Powde Metallurgical Routine 粉末冶金法 Vacuum

8、 Refinery 真空熔炼法 Energy Beam(Electron,Ionic)Method 能束(电子、离子）法 Directional Solidification 定向凝固 Other Metallurgical Methods 其它冶金法 高纯石英直接熔炼、低温熔体萃取等通常的物理冶金法是采用上述手段的组合来达到对硅提纯的目的。Process of ProPowers MP Routine 普罗的冶金法流程5NPackaging&Packaging&DeliveryDelivery包装发货包装发货Chosen MaterialChosen MaterialLocal Vacuum

9、Local Vacuum精料原则精料原则Arc furcaceArc furcace矿热炉矿热炉湿法冶金湿法冶金HydrometallurgyHydrometallurgyVacuum Vacuum RefineryRefineryEM StirringEM StirringEnergy BeamEnergy Beam真空精炼及铸锭真空精炼及铸锭PyrochemicalPyrochemical高温化学高温化学硅锭加工硅锭加工Crystal StretchingCrystal StretchingResistivity ScanResistivity ScanMinor carrier LTMi

10、nor carrier LTImpurities Test Impurities Test 质量测试质量测试QCQC粉末冶金粉末冶金Powder MetallurgyPowder MetallurgySmeltingSmelting精炼精炼Slagging Slagging 造渣造渣6N5.55.7N3N44.5N4NSlicingSlicingCell Cell Manu-Manu-factueringfactueringMono-Mono-CrystalCrystal Theoretical basis of MP Routine MP 法SOG 理论基础 Mechanics of Dif

11、fusion and Extraction reaction in solid 固体扩散萃取反应机理 Analysis and application of Hydrophile and hydrophobe in powder metallurgy 粉末冶金的亲水性和疏水性的分析及应用 Research of Segregation on interface between different matters 不同物质界面分凝机理研究 Mechanism of physical chemical reaction in slagging refinery 造渣精炼的物理化学反应机制 Prin

12、ciple and application of oxygen dispensing in pyro-liquid silicon 液体硅内部高温施氧的原理与应用 Research of atomic kinetics on solid-liquid interface activity energy 固液界面表面活化能的原子动力学研究 Quantum mechanics analysis of atoms in pyroliquid 高温液体原子的量子力学分析 Research on segregation in solid-liquid interfaces 液固界面分凝现象和机理研究 M

13、athematic model anlysis of heat field and crystal growth theory 晶体生长理论及各类温场的数学模型分析 Researcon existence form and impact of impurities in silicon crystal 杂质在硅晶体内部的存在形式和对晶体的影响的研究 Formation mechanism of impurities deep lever and its restrain method 杂质深能级的形成机制研究及抑制方法 冶金法同样需要在理论上进行重要的突破。目 录 Brief Introduc

14、tion of Metallurgical Purification of SOG冶金法简介 Evolution of Metallurgical Purification of SOG 冶金法的进展 Impurities and its affect to the SOG 太阳能级多晶硅的杂质及其对材料性能的影响 Quality Stability Analysis of Metallurgical Purified SOG 冶金法多晶硅的质量稳定性分析Progress of MP method on PurityMP法在纯度上的进展（以经济规模）Time Lab Purity Prod Purity Mfgrs Country时间 实验室纯度 产品纯度 部分制造商 国家2003 年“5n”-JFE Japan2004 年“6n”-JFE2005 年“6n”-迅天宇 China2006 年“7n”5N Elkem Norway2007 年“6n”5N Dow Chem.,南安三晶 China2008 年 5.7N 5.7n 普罗,佳科,银星,BSI,DC，Chn,CAD2009 年 6N 5.9N 5.9n 普罗,银星,etc.China