[精选]CMOS工艺流程讲解.pptx

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1、Wafer FabricationProcessTechnologyCMOSContentu0.5um CMOS process flow&cross sectionu0.18um CMOS process flow&cross sectionuPCM introductionCMOSStarting with a silicon waferCross Section of the Silicon WaferMagnifying the Cross SectionCMOSn/p-well FormationGrow Thin OxideDeposit NitrideDeposit Resist

2、silicon substrateUV ExposureDevelop ResistEtch Nitriden-well ImplantRemove ResistCMOSn/p-well Formationsilicon substrateGrow Oxide n-wellRemove Nitridep-well ImplantRemove OxideTwin-well Drive-inp-welln-wellRemove Drive-In Oxidesilicon substratep-welln-wellCMOSLOCOS IsolationGrow Thin OxideDeposit N

3、itrideDeposit ResistUV ExposureDevelop ResistEtch NitrideRemove ResistCMOSLOCOS Isolationsilicon substratep-welln-wellDeposit ResistUV ExposureDevelop ResistField Implant BRemove ResistGrow Field OxideFoxRemove NitrideRemove Oxidesilicon substratep-welln-wellGrow Screen OxideCMOSTransistor Fabricati

4、onVt ImplantDeposit ResistUV ExposureDevelop ResistPunchthrough ImplantRemove ResistRemove OxideFoxsilicon substratep-welln-wellGrow Gate OxideCMOSTransistor FabricationDeposit PolySiPolySi ImplantpolySipolySiDeposit ResistUV ExposureDevelop ResistEtch PolySiRemove ResistFoxsilicon substratep-welln-

5、wellCMOSTransistor FabricationDeposit Thin OxideDeposit ResistUV ExposureDevelop Resistn-LDD ImplantRemove ResistFoxpolySipolySisilicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistp-LDD ImplantRemove ResistDeposit Spacer OxideEtch Spacer OxideFoxpolySipolySi

6、silicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistn+S/D Implantn+n+Remove ResistFoxpolySipolySisilicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistp+S/D Implantp+p+Remove ResistFoxpolySipolySin+n+silicon substratep

7、-welln-wellCMOSContacts&InterconnectsDeposit BPTEOSBPTEOSBPSG ReflowPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistContact EtchbackRemove ResistFoxpolySipolySin+n+p+p+silicon substratep-welln-wellCMOSContacts&InterconnectsDepost Metal 1Metal 1Deposit ResistUV ExposureDevelop ResistEtch

8、 Metal 1Remove ResistFoxpolySipolySip+p+n+n+BPTEOSsilicon substratep-welln-wellCMOSContacts&InterconnectsDeposit IMD 1IMD1Deposit SOGSOGPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistVia EtchRemove ResistFoxpolySipolySip+p+Metal 1n+n+BPTEOSsilicon substratep-welln-wellCMOSContacts&Inte

9、rconnectsDeposit Metal 2Metal 2Metal 2Deposit ResistUV ExposureDevelop ResistEtch Metal 2Remove ResistDeposit PassivationFoxpolySipolySip+p+Metal 1n+n+BPTEOSIMD1SOGPassivation0.18um Process Cross sectionPad oxideP SubstrateOD SiN0.18um Process Cross sectionP Substrate0.18um Process Cross sectionP Su

10、bstratePwell maskPwellNAPTVTNB11 Pwell/NAPT/VTN ImplantNwell maskP31 Nwell/P_APT/VTP ImplantNwellPAPTVTP0.18um Process Cross sectionP SubstratePwellNAPTVTNNwellNfieldPAPTMask 132HF Wet dip and Grow Gate oxide-2 0.18um Process Cross sectionPoly NLDDP SubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyNLDD impl

11、antNLDD 114 maskPLDD 113 maskPLDD implant0.18um Process Cross sectionPoly PLDDPLDD NLDDP SubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyPLDD 197 mask 3.3V&1.8VP-pocket/PLDD impNLDD 116 mask 3.3VNLDD2-1 As/NLDD2-2P31 imp0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSD

12、PSD 197 maskNSD 198 maskNSD imp0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSD0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrench oxide0.18um Process Cross sectionPolyi P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSD

13、NSDNSDPSDPSDWWWWILDTrench oxide0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyiPSDNSDNSDNSDPSDPSDWWWWILDTrench oxideIMD-1WWWW0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrench oxideIMD-1WWWWMetal-1Metal-20.18um Process Cross sec

14、tionMetal-1IMD-1A-Si PwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrench oxideMetal-4IMD-4WWWIMD-5Metal-6IMD-3WWMetal-2IMD-2Metal_5WWWWWWWWPCMuPCM就是Process Control&Monitor的简称；u同时，PCM也称为WAT：Wafer Accept Test；PCM-Purpose PCM 主要把线上一些工艺异常进行及时的反映，在产品入库前对其进行最后一道质量的检验，其作用归纳起来，主要有如下几点：1对产品进行参数质量检验；2监控在

15、线工艺对电参数的影响，以及工艺的波动；3判定WAFER PASS/FAIL的一个重要依据，客户会根据PCM 测试情况，决定接收、或拒收WAFER。4 Yield analysis PCM key items 1Vt 2 BVD 3Ion 4Leakage 5Sheet Rs 6Rc 7Capacitor 8 OthersPCM Test LocationPCMMOS TransistorPCM Vt measurePCM BVD maesurePCM Leakage measurePCM I-V curve PCM InterPoly CapacitorMETALPOLY2POLY1POLY2

16、POLY1FOXP-SUBW Capacitor WidthL(Capacitor Length)CAPACITORCAPACITORPCM Poly RsWLP SubstrateLWP SubstrateHigh Resistor layerPoly1Metal1Poly1 Low Rs High Rs Poly Resistor Marking layer PCM NW RsP-SUBN WellMetalN+ContactN PN+implantNwellL N+Nwell Resistor Marking LayerPCM N+RsP-SUBMetalContactN PN+impl

17、antL N+N+Resistor Marking LayerPCM P+RsP-SUBMetalP PP+implantNwellL P+NwellPCM P+/NWP PP+implantP-SUBN WellMetalP+N+ContactN PN+implantNwellW1 L1W2 L2PCM N+/PsubN PN+implantP-SUBMetalN+P+ContactP PP+implantNwellW1 L1W2 L2PCM-LPNPP+P+P+N+N+NWellP-SubMetalN PN+implantNwellP PP+implantLPNP Marking Laye

18、rPCM-VPNPP+P+P+N+N+NWellP-SubMetalNwellN PN+implantP PP+implant Thanks!u9、静夜四无邻，荒居旧业贫。11月-2311月-23Sunday,November 26,2023u10、雨中黄叶树，灯下白头人。03:26:4303:26:4303:2611/26/2023 3:26:43 AMu11、以我独沈久，愧君相见频。11月-2303:26:4303:26Nov-2326-Nov-23u12、故人江海别，几度隔山川。03:26:4303:26:4303:26Sunday,November 26,2023u13、乍见翻疑梦，相

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